公开(公告)号：US20200185228A1

公开(公告)日：2020-06-11

申请号：US16793683

申请日：2020-02-18

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Sony Varghese ,  Anthony Renau ,  Morgan Evans ,  Joseph C. Olson

IPC: H01L21/3065 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

公开(公告)号：US12106936B2

公开(公告)日：2024-10-01

申请号：US18214355

申请日：2023-06-26

Applicant: Applied Materials, Inc.

Inventor： Peter F. Kurunczi ,  Morgan Evans ,  Joseph C. Olson ,  Christopher A. Rowland ,  James Buonodono

IPC: H01J37/20 ,  H01J37/08 ,  H01J37/305

CPC classification number: H01J37/3053 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/0822 ,  H01J2237/20228 ,  H01J2237/3174

Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

公开(公告)号：US11996266B2

公开(公告)日：2024-05-28

申请号：US17093139

申请日：2020-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Anthony Renau ,  Joseph C. Olson ,  Peter F. Kurunczi

IPC: H01J37/20 ,  H01J37/304

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J2237/201

Abstract: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

公开(公告)号：US11810755B2

公开(公告)日：2023-11-07

申请号：US16717211

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

CPC classification number: H01J37/3053 ,  G02B5/1857 ,  G02B6/13 ,  H01J37/32422 ,  H01L21/3065 ,  G02B6/124 ,  G02B6/12007 ,  G02B2006/12176 ,  G06T19/006 ,  H01J37/05 ,  H01J37/073 ,  H01J37/1472 ,  H01J37/3045 ,  H01J37/32449 ,  H01J2237/303 ,  H01J2237/334

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11226441B2

公开(公告)日：2022-01-18

申请号：US17072261

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph C. Olson

IPC: G02B5/18 ,  B29D11/00 ,  G02B6/02

Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

公开(公告)号：US20210391155A1

公开(公告)日：2021-12-16

申请号：US17160042

申请日：2021-01-27

Applicant: Applied Materials, Inc.

Inventor： Christopher Campbell ,  Costel Biloiu ,  Peter F. Kurunczi ,  Jay R. Wallace ,  Kevin M. Daniels ,  Kevin T. Ryan ,  Minab B. Teferi ,  Frank Sinclair ,  Joseph C. Olson

IPC: H01J37/32

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

公开(公告)号：US11193198B2

公开(公告)日：2021-12-07

申请号：US16706113

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Jinxin Fu

IPC: G03F7/20 ,  C23C14/22 ,  G02B5/18 ,  G03F7/00 ,  G03F7/16 ,  F21V8/00

Abstract: Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.

公开(公告)号：US20210351069A1

公开(公告)日：2021-11-11

申请号：US16871751

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen ,  Daniel Distaso ,  Ryan Boas

IPC: H01L21/768 ,  G03F7/20

Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

公开(公告)号：US10930735B2

公开(公告)日：2021-02-23

申请号：US16793683

申请日：2020-02-18

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Sony Varghese ,  Anthony Renau ,  Morgan Evans ,  Joseph C. Olson

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/3065 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/423

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

公开(公告)号：US20200294755A1

公开(公告)日：2020-09-17

申请号：US16354638

申请日：2019-03-15

Applicant: APPLIED Materials, Inc.

Inventor： Frank Sinclair ,  Costel Biloiu ,  Joseph C. Olson ,  Alexandre Likhanskii

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

Abstract: An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.