Abstract:
A method for processing a transparent workpiece includes forming a closed contour line having a plurality of defects in the transparent workpiece such that the closed contour line defines a closed contour. Forming the closed contour line includes directing a pulsed laser beam through an aspheric optical element and into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, the induced absorption producing a defect within the transparent workpiece, and translating the transparent workpiece and the pulsed laser beam relative to each other along the closed contour line. The method further includes etching the transparent workpiece with a chemical etching solution at an etching rate of about 2.5 μm/min or less to separate a portion of the transparent workpiece along the closed contour line, thereby forming an aperture extending through the transparent workpiece, the aperture comprising an aperture perimeter extending along the closed contour.
Abstract:
Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material, and translating the material and the laser beam relative to each other, thereby forming a plurality of defect lines in the material, and etching the material in an acid solution to produce holes greater than 1 micron in diameter by enlarging the defect lines in the material. A glass article includes a stack of glass substrates with formed holes of 1-100 micron diameter extending through the stack.
Abstract:
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
Abstract:
The present invention relates to a laser cutting technology for cutting and separating thin substrates of transparent materials, for example to cutting of display glass compositions mainly used for production of Thin Film Transistors (TFT) devices. The described laser process can be used to make straight cuts, for example at a speed of >1 m/sec, to cut sharp radii outer corners (
Abstract:
Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 μm. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.
Abstract:
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
Abstract:
A method of laser processing a material to form a separated part. The method includes focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or fault line along the laser beam focal line within the material, and directing a defocused carbon dioxide (CO2) laser from a distal edge of the material over the plurality of holes to a proximal edge of the material.
Abstract:
Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material, and translating the material and the laser beam relative to each other, thereby forming a plurality of defect lines in the material, and etching the material in an acid solution to produce holes greater than 1 micron in diameter by enlarging the defect lines in the material. A glass article includes a stack of glass substrates with formed holes of 1-100 micron diameter extending through the stack.
Abstract:
A gas permeable glass window, suitable for use with liquid interface additive manufacturing, has an optically transparent glass article greater than about 0.5 millimeters in thickness defining a first surface and a second surface. A plurality of gas channels are disposed through the article from the first surface to the second surface. The gas channels occupy less than about 1.0% of a surface area of the article and are configured such that the article has a gas permeability between about 10 barrers and about 2000 barrers.
Abstract:
The present disclosure relates to a process for cutting and separating arbitrary shapes of thin substrates of transparent materials, particularly tailored composite fusion drawn glass sheets, and the disclosure also relates to a glass article prepared by the method. The developed laser method can be tailored for manual separation of the parts from the panel or full laser separation by thermally stressing the desired profile. The self-separation method involves the utilization of an ultra-short pulse laser that can be followed by a CO2 laser (coupled with high pressure air flow) for fully automated separation.