公开(公告)号：US08287647B2

公开(公告)日：2012-10-16

申请号：US11736511

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head dispenses small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity head includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.

摘要翻译： 实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。 更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。 接近头部在较短的时间内分配少量的反应物和净化气体，以在相对较短的时间段内分配和泵送离开较小反应体积，这增加了通过量。 在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。 接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。 接近头覆盖衬底表面的活性过程区域。 接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。 邻近头部包括多个侧面，每个侧面被构造成在邻近头部下方的基底表面上分配反应物气体或净化气体。 每侧至少有一个真空通道。

公开(公告)号：US08026605B2

公开(公告)日：2011-09-27

申请号：US11638413

申请日：2006-12-14

申请人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

发明人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

IPC分类号： H01L23/535 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.

摘要翻译： 提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。 含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。 钌区介于第一阻挡层和氧化钌区之间。 钌氧化物区位于钌区和富钌区之间。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US20080260967A1

公开(公告)日：2008-10-23

申请号：US11736519

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/50 ,  H05H1/24

CPC分类号： C23C16/4412 ,  C23C16/45544 ,  C23C16/45595 ,  H01J37/3244

摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

摘要翻译： 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。

公开(公告)号：US07396430B2

公开(公告)日：2008-07-08

申请号：US11395881

申请日：2006-03-31

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： H01L21/306

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US07040332B2

公开(公告)日：2006-05-09

申请号：US10377943

申请日：2003-02-28

申请人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

发明人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

摘要翻译： 用于清洁基底的系统包括限定在基底和从其延伸的侧壁之间的内腔的罐。 声能源固定在一个侧壁的外表面上。 该箱被配置成将与声能相关联的方向与声能源分离，并将声能引导到基板。

公开(公告)号：US06858091B2

公开(公告)日：2005-02-22

申请号：US10013211

申请日：2001-12-07

申请人： John M. Boyd ,  Mike Ravkin ,  Katrina A. Mikhaylich

发明人： John M. Boyd ,  Mike Ravkin ,  Katrina A. Mikhaylich

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： A method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with spraying a cleaning chemistry containing corrosion inhibitors onto a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.

摘要翻译： 提供了一种用于最小化单晶片清洁系统中的电偶腐蚀效应的方法。 该方法通过将含有腐蚀抑制剂的清洁化学品喷涂到晶片的表面上而开始。 然后，将晶片的表面暴露于清洁化学品一段时间。 接下来，刷新清洁化学品和晶片表面的界面处的浓度梯度。 然后，同时施加漂洗剂和干燥剂以除去清洁化学品，其中干燥剂在将腐蚀抑制剂的浓度稀释至不足以提供防腐蚀的水平之前将晶片的表面干燥。

公开(公告)号：US06857435B2

公开(公告)日：2005-02-22

申请号：US10803118

申请日：2004-03-16

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B3/02 ,  B08B3/12 ,  C25F5/00

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.

摘要翻译： 提供了一种用声波清洁器清洗半导体衬底的方法。 该方法通过将冷却流体引入到声音清洁器的内护套区域中来冷却位于内护套区域内的声波谐振器。 然后，将清洁剂引入到声音清洁器的外护套区域中以清洁半导体衬底。 接下来，在内护套区域和外护套区域之间的孔口部位处限定冷却流体/清洁剂界面。 然后，来自谐振器的声能通过孔口处的界面传递到清洁剂。 接下来，将清洁剂施加到半导体衬底。

公开(公告)号：US06845778B2

公开(公告)日：2005-01-25

申请号：US10112639

申请日：2002-03-29

申请人： John M. Boyd ,  Katrina Mikhaylich

发明人： John M. Boyd ,  Katrina Mikhaylich

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

摘要翻译： 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆声波清洗器。 兆声波清洗器包括换能器和谐振器。 谐振器被配置成传播来自换能器的能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端构造成在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洗来清洁半导体衬底的系统和用于清洁半导体衬底的方法。

公开(公告)号：US06752703B2

公开(公告)日：2004-06-22

申请号：US10029515

申请日：2001-12-21

申请人： John M. Boyd ,  Miguel A. Saldana ,  Damon Vincent Williams

发明人： John M. Boyd ,  Miguel A. Saldana ,  Damon Vincent Williams

IPC分类号： B24B722

CPC分类号： B24B37/27 ,  B24B37/30

摘要： CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.

摘要翻译： CMP系统和方法提供了从真空卡盘通过载体膜施加到晶片的必要的真空和压力，而不会在CMP操作期间干扰期望的晶片平面化。 可以通过结构从晶片的暴露表面去除先前的晶圆上的低抛光率区域，以在CMP操作期间响应于载体膜上的晶片的力均匀地压缩载体膜。 载体膜的相邻孔之间的距离和直径减小，并且孔的位置处于与通过真空卡盘的通道协调的阵列中。 该结构在CMP操作期间显着降低了载体膜的压缩的最大值。 结果，在CMP操作期间，晶片不会以与载体膜的压缩精确匹配的方式变形，而是保持基本上平坦。