公开(公告)号：US20210376177A1

公开(公告)日：2021-12-02

申请号：US17287988

申请日：2019-10-23

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/073 ,  H01L31/0296

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US10243092B2

公开(公告)日：2019-03-26

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09698285B2

公开(公告)日：2017-07-04

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US20160265100A1

公开(公告)日：2016-09-15

申请号：US15163321

申请日：2016-05-24

Applicant: First Solar, Inc.

Inventor： Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: C23C14/24 ,  B65G53/16

CPC classification number: C23C14/24 ,  B65G53/16 ,  C23C14/228

Abstract: An improved feeder system and method for a vapor transport deposition system that includes a carrier gas bypass flow line to allow for continuous carrier gas flow to a vaporizer unit when a vibratory unit which supplies powdered material and carrier gas to the vaporizer unit is out of service. A process gas flow line to the vibratory unit may be included when the powdered material contains a powdered dopant in the material mix.

公开(公告)号：US09276154B2

公开(公告)日：2016-03-01

申请号：US14170989

申请日：2014-02-03

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Jing Guo ,  Sreenivas Jayaraman ,  Oleh P. Karpenko ,  Feng Liao ,  Chong Lim ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/00 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/073 ,  H01L31/0392

CPC classification number: H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract translation: 一种光伏器件，包括在窗口层和吸收层之间的保护层，该保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及形成这种光伏器件的方法。

公开(公告)号：US20150171258A1

公开(公告)日：2015-06-18

申请号：US14625649

申请日：2015-02-19

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  John Barden ,  Feng Liao ,  Xilin Peng ,  Rick C. Powell ,  Kenneth M. Ring ,  Gang Xiong

IPC: H01L31/18 ,  C23C16/455 ,  H01J37/34 ,  C23C16/48 ,  C23C16/448 ,  C23C16/28 ,  C23C16/52 ,  C23C16/40

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。

公开(公告)号：US09006020B2

公开(公告)日：2015-04-14

申请号：US13739183

申请日：2013-01-11

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Xilin Peng ,  John Barden ,  Arnold Allenic ,  Feng Liao ,  Kenneth M. Ring

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。

公开(公告)号：US20130183794A1

公开(公告)日：2013-07-18

申请号：US13739183

申请日：2013-01-11

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Xilin Peng ,  John Barden ,  Arnold Allenic ,  Feng Liao ,  Kenneth M. Ring

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.