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61 条记录 (耗时 0.025 秒)

    Horizontal microelectronic field emission devices
    23.
    发明授权
    Horizontal microelectronic field emission devices 失效
    水平微电子场发射装置

    公开(公告)号：US5144191A

    公开(公告)日：1992-09-01

    申请号：US714275

    申请日：1991-06-12

    申请人： Gary W. Jones ,  Ching-Tzong Sune

    发明人： Gary W. Jones ,  Ching-Tzong Sune

    IPC分类号： H01J3/02

    CPC分类号： H01J3/022

    摘要： A microelectronic field emitter includes a horizontal emitter electrode and a vertical extraction electrode on the horizontal face of a substrate. An end of the horizontal emitter electrode and the end of the vertical extraction electrode form an electron emission gap therebetween. The emitter electrode may be formed on an insulating layer which is formed on a substrate. The insulating layer also includes a sidewall, and the extraction electrode may be formed on the sidewall with one thereof extending adjacent the emitter electrode to form an electron emission gap therebetween. A vertical collector electrode may also be formed on the sidewall of a second insulating layer spaced from the first sidewall. The field emitter may be cylindrical, planar, or of various other shapes. multiple emitters, extractors and collectors may be stacked on one another. The emitters may be formed using conventional microelectronic fabrication techniques, in which an insulating layer is etched to form a sidewall and conformal metallization is used to form extractor and collector electrodes. A low capacitance, high speed, high power horizontal microelectronic emitter may thereby be formed.

    摘要翻译： 微电子场发射器在基板的水平面上包括水平发射极电极和垂直引出电极。 水平发射极的端部和垂直引出电极的端部在它们之间形成电子发射间隙。 发射电极可以形成在形成在基板上的绝缘层上。 绝缘层还包括侧壁，并且引出电极可以形成在侧壁上，其中一个延伸邻近发射极电极，以在它们之间形成电子发射间隙。 也可以在与第一侧壁间隔开的第二绝缘层的侧壁上形成垂直集电极。 场发射器可以是圆柱形的，平面的或各种其他形状。 多个发射器，提取器和收集器可以彼此堆叠。 发射体可以使用常规的微电子制造技术形成，其中绝缘层被蚀刻以形成侧壁，并且保形金属化用于形成提取器和集电极。 因此可以形成低电容，高速，高功率的水平微电子发射器。

    Insulator and metallization method for VLSI devices with anisotropically-etched contact holes
    24.
    发明授权
    Insulator and metallization method for VLSI devices with anisotropically-etched contact holes 失效
    具有各向异性蚀刻接触孔的VLSI器件的绝缘体和金属化方法

    公开(公告)号：US4489481A

    公开(公告)日：1984-12-25

    申请号：US420153

    申请日：1982-09-20

    申请人： Gary W. Jones

    发明人： Gary W. Jones

    IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L21/283

    CPC分类号： H01L21/76802 ,  H01L21/3105

    摘要： In manufacture of VLSI semiconductor devices, the insulator surface upon which a metallization pattern is deposited must be smooth to facilitate lithographic operations. This requires the insulator to be thick and flowed or otherwise treated to eliminate steep edges. A contact hole etched in a thick insulator has steep sidewalls, however, and so chemical vapor deposition is preferrably used for the metallization so the sidewalls will be coated. A thin insulator coating is deposited after the contact holes are etched and prior to metallization to cover the low-resistance flowed insulator and self-align the contacts.

    摘要翻译： 在VLSI半导体器件的制造中，沉积金属化图案的绝缘体表面必须是平滑的，以便于光刻操作。 这就要求绝缘体厚而流动或以其他方式处理以消除陡峭的边缘。 蚀刻在厚绝缘体中的接触孔具有陡峭的侧壁，然而，因此化学气相沉积优选用于金属化，因此侧壁将被涂覆。 在接触孔被蚀刻之后并且在金属化之前沉积薄绝缘体涂层以覆盖低阻抗流动的绝缘体并自动对准接触。

    Inverse visible spectrum light and broad spectrum light source for enhanced vision
    25.
    发明授权
    Inverse visible spectrum light and broad spectrum light source for enhanced vision 有权

    公开(公告)号：US10288233B2

    公开(公告)日：2019-05-14

    申请号：US15338616

    申请日：2016-10-31

    申请人： Gary W. Jones

    发明人： Gary W. Jones

    IPC分类号： F21K9/64 ,  F21V9/30 ,  H05B33/08 ,  F21Y115/10 ,  F21Y113/13 ,  H01L25/075 ,  H01L33/50

    摘要： A visible light spectrum and light source apparatus are described that provide over 80% of their total radiant flux power within the 385 nm-530 nm and the 570 nm-800 nm spectral ranges, collectively. The objective of the light spectrum and apparatus is to improve the visibility and shape of a wider range of objects than is practical using conventional LED white light sources at similar radiant flux power conditions. The new light source can provide good Scotopic or Mesopic at low power levels compared to most other light sources for illumination and improved differential photopic color-range vision. One illustrative embodiment of this new spectrum and light source provides a full visible light spectrum with at least 6% of the highest peak radiant power of all wavelengths between 405 nm-730 nm, and another illustrative embodiment provides a similar full spectrum between 440 nm and 730 nm. In both embodiments, the peak radiant power wavelength in the 475-510 nm cyan spectral region or the red 600-680 nm spectral peak is at least 1.1-times the lowest relative radiant flux power in the 530-570 nm spectral region.

    Ambient spectrum light conversion device
    26.
    发明授权
    Ambient spectrum light conversion device 有权
    环境光谱光转换装置

    公开(公告)号：US09295855B2

    公开(公告)日：2016-03-29

    申请号：US14217418

    申请日：2014-03-17

    申请人： Gary W. Jones ,  Susan K. Schwartz Jones

    发明人： Gary W. Jones ,  Susan K. Schwartz Jones

    IPC分类号： F21V9/16 ,  A61N5/06

    CPC分类号： A61N5/062 ,  A01G9/1438 ,  A01G9/243 ,  A61L2/0052 ,  A61N5/0616 ,  A61N5/0618 ,  A61N2005/0628 ,  A61N2005/0657 ,  A61N2005/0662 ,  A61N2005/0665 ,  A61N2005/0667 ,  Y02A40/252 ,  Y02A40/266 ,  Y02P60/124

    摘要： Apparatus and methods to enhance light intensity within useful red to near-infrared spectral ranges, using direct or indirect sunlight, or from other ambient white light, are described. The disclosed devices provide high quantum yield photoluminescent ambient light spectrum conversion to increase the supplied energy primarily in the 590 nm-850 nm spectral range. These devices also pass much of the incident light in the spectral range in which the device's photoluminescent materials emit light, thereby greatly increasing the effective intensity of light available in the targeted 590-850 nm wavelength range. The ambient light conversion devices of the disclosure may be incorporated in apparel, bandage-like patches, converting reflectors, large area converters, awnings, window covers, and other articles, materials, and products. The converted light may be used in therapeutic treatments, horticultural and biotechnological applications, and other applications in which the converted light outputs of the present disclosure are beneficial.

    摘要翻译： 描述了使用直接或间接阳光或从其他环境白光增强有用的红色至近红外光谱范围内的光强度的装置和方法。 所公开的装置提供高量子效应光致发光环境光谱转换，以主要在590nm-850nm光谱范围内增加所提供的能量。 这些器件还会在器件的光致发光材料发光的光谱范围内通过大部分入射光，从而大大增加目标590-850 nm波长范围内可用光的有效强度。 本公开的环境光转换装置可以结合在服装，绷带状贴片，转换反射器，大面积转换器，遮阳篷，窗口罩以及其它物品，材料和产品中。 转化的光可以用于治疗处理，园艺和生物技术应用以及其中本公开转换的光输出有益的其它应用。

    Bottle rocket launcher
    28.
    发明授权
    Bottle rocket launcher 失效
    瓶火箭发射器

    公开(公告)号：US06315629B1

    公开(公告)日：2001-11-13

    申请号：US09481313

    申请日：2000-01-11

    申请人： Gary W. Jones

    发明人： Gary W. Jones

    IPC分类号： A63H2726

    CPC分类号： A63H27/005

    摘要： A bottle rocket launcher is provided for rockets constructed for educational and entertainment purposes out of synthetic resin bottles used primarily for soft drinks. The rocket launcher includes a bottle plug for filling the bottle rocket with compressed gas such as air and guiding it as it exits the launcher, a release mechanism for initially retaining and then selectively releasing the rocket adjacent its nozzle, and a base. The release mechanism provides multiple hooks which grab a rim adjacent the nozzle, and selectively and simultaneously releases each of the hooks, whereby the upward force applied by the compressed gas against the liquid causes the hooks to slide off of the rim and permits the rocket to lift off of the launcher. The bottle plug is releasably connected to the release mechanism, while a gas delivery conduit remains connected to the bottle plug for inhibiting spillage of liquid from the bottle rocket until the bottle rocket is secured to the release mechanism and filled with compressed gas prior to launch.

    摘要翻译： 为从事教育和娱乐目的的火箭弹提供了一个瓶火箭发射器，用于主要用于软饮料的合成树脂瓶。 火箭发射器包括一个瓶塞，用于用诸如空气的压缩气体填充瓶火箭，并在其离开发射器时引导它，释放机构用于初始保持，然后选择性地释放与其喷嘴相邻的火箭和基座。 释放机构提供多个钩子，其抓住与喷嘴相邻的边缘，并且选择性地并且同时地释放每个钩子，由此由压缩气体施加到液体上的向上的力导致钩子从边缘滑出并允许火箭 抬起发射器。 瓶塞可释放地连接到释放机构，而气体输送管道保持连接到瓶塞，用于阻止液体从瓶火箭溢出，直到瓶火箭被固定到释放机构并在发射之前填充压缩气体。

    High aspect ratio gated emitter structure, and method of making
    29.
    发明授权
    High aspect ratio gated emitter structure, and method of making 失效

    公开(公告)号：US5965898A

    公开(公告)日：1999-10-12

    申请号：US937412

    申请日：1997-09-25

    申请人： Gary W. Jones ,  Steven M. Zimmerman

    发明人： Gary W. Jones ,  Steven M. Zimmerman

    IPC分类号： H01J3/02 ,  H01J9/02 ,  H01L29/41 ,  H01J1/16 ,  H01J19/10

    CPC分类号： H01J9/025 ,  H01J3/022 ,  H01J2201/30407

    摘要： A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.