公开(公告)号：US06500489B1

公开(公告)日：2002-12-31

申请号：US09208541

申请日：1998-12-09

申请人： Frank S. Hintermaier ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

发明人： Frank S. Hintermaier ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

IPC分类号： C23C1640

CPC分类号： C23C16/409 ,  C23C16/40 ,  C23C16/407 ,  C23C16/4485 ,  C23C16/56 ,  H01L21/31691

摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个烷氧基的Bi络合物，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。

公开(公告)号：US06395194B1

公开(公告)日：2002-05-28

申请号：US09216679

申请日：1998-12-18

申请人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

发明人： Michael W. Russell ,  Peter C. Van Buskirk ,  Jonathan J. Wolk ,  George E. Emond

IPC分类号： C09K1300

CPC分类号： C09G1/02 ,  C23F3/00 ,  H01L21/3212 ,  H01L28/60

摘要： A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

摘要翻译： 从其上沉积有贵金属材料的基板去除贵金属材料的方法，例如在其上包括图案化为电极的贵金属材料（例如铱）的层的半导体器件结构。 用含有研磨抛光颗粒和卤化物基氧化剂的化学机械抛光组合物对衬底进行化学机械抛光。 本发明的CMP组合物和方法在诸如铁电或高介电常数电容器器件的制造等应用中提供了有效的平面化和从衬底去除贵金属材料。

公开(公告)号：US06346741B1

公开(公告)日：2002-02-12

申请号：US09200499

申请日：1998-11-25

申请人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

IPC分类号： H01L2940

CPC分类号： H01L27/1085 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

摘要翻译： 通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由 传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。 这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。 优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

公开(公告)号：US06342711B1

公开(公告)日：2002-01-29

申请号：US09264047

申请日：1999-03-08

申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau

发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau

IPC分类号： H01L2976

CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/28568 ,  H01L28/55

摘要： A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element. Such E-fields confinement may be effected by fabrication of the device structure including: (a) patterning the stack capacitor, and depositing a non-ferroelectric, high ∈ material layer over and on the sides of the stack capacitor; (b) forming the stack capacitor without patterning the ferroelectric material and rendering a portion of the material non-ferroelectric in character; or (c) forming the ferroelectric stack capacitor with an aspect ratio, of effective lateral dimension d of the ferroelectric capacitor material element to thickness t of the ferroelectric capacitor material element, that is greater than 5, with d and t being measured in same dimensional units.

摘要翻译： 一种强电介质电容器器件结构，包括铁电堆叠电容器，该铁电体堆叠电容器包括位于绝缘体层下方的包含埋入晶体管电路的衬底上的铁电材料电容器元件，所述绝缘体层具有其中包含导体插塞到晶体管电路的通孔，其中电场被结构地局限于 铁电电容材料元件。 这样的电场限制可以通过制造器件结构来实现，该器件结构包括：（a）图案化叠层电容器，并且在堆叠电容器的侧面上和之上沉积非铁电的高ε材料层; （b）形成堆叠电容器，而不对铁电材料进行构图，并使材料的一部分非铁电性能; 或（c）形成强电介质电容器材料元素的有效横向尺寸d与铁电电容器材料元件的厚度t的长宽比大于5的铁电堆叠电容器，其中d和t以相同的尺寸被测量 单位。

公开(公告)号：US06180420B2

公开(公告)日：2001-01-30

申请号：US09208543

申请日：1998-12-09

申请人： Frank S. Hintermaier ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

发明人： Frank S. Hintermaier ,  Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Debra A. Desrochers

IPC分类号： H01L2100

CPC分类号： H01L21/31691 ,  C23C16/40 ,  C23C16/407 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  H01L28/55

摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个羧酸酯基的Bi络合物，并且在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。

公开(公告)号：US20170018782A1

公开(公告)日：2017-01-19

申请号：US15209747

申请日：2016-07-13

申请人： Jeffrey F. Roeder ,  Anthony F. Zeberoff ,  Peter C. Van Buskirk

发明人： Jeffrey F. Roeder ,  Anthony F. Zeberoff ,  Peter C. Van Buskirk

IPC分类号： H01M4/90 ,  H01M4/92 ,  H01M4/86 ,  H01M8/12 ,  H01M4/88

CPC分类号： H01M4/9033 ,  H01M4/8657 ,  H01M4/8867 ,  H01M4/8885 ,  H01M4/9025 ,  H01M4/925 ,  H01M8/12 ,  H01M2004/8689 ,  H01M2008/1293

摘要： A novel method to modify the surface of lanthanum and strontium containing cathode powders before or after sintering by depositing layers of gadolinium doped ceria (GDC) and/or samarium doped ceria or similar materials via atomic layer deposition on the powders. The surface modified powders are sintered into porous cathodes that have utility enhancing the electrochemical performance of the cathodes, particularly for use in solid oxide fuel cells. Similar enhancements are observed for surface treatment of sintered cathodes.

摘要翻译： 通过在粉末上沉积原子层沉积，通过沉积掺杂钆掺杂二氧化铈（GDC）和/或钐掺杂的二氧化铈或类似材料的方法，在烧结之前或之后修饰镧和含锶阴极粉末的表面。 将表面改性的粉末烧结成多孔阴极，其具有提高阴极的电化学性能的效用，特别是用于固体氧化物燃料电池中。 对于烧结阴极的表面处理，观察到类似的增强。

公开(公告)号：US09480766B2

公开(公告)日：2016-11-01

申请号：US14520321

申请日：2014-10-21

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

IPC分类号： A61L9/00 ,  B01D53/02 ,  B01J21/06 ,  A61L2/232 ,  A61L2/238

CPC分类号： A61L9/00 ,  A61L2/232 ,  A61L2/238 ,  B01J21/063

摘要： Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems. The disclosure also includes photocatalytic materials incorporated on the surface of packaged LEDs, LED lamps and LED luminaires, with photocatalytic materials incorporated on optically useful luminaire surfaces or on the surface of the remote phosphor. The disclosure also includes ultrathin photocatalytic materials incorporated on surfaces to affect antibacterial and antiviral properties.

摘要翻译： 公开了新型光催化装置，其利用形成在具有高透射率，高反射率或散射特性的光学元件上形成的超薄二氧化钛基光催化材料，或在高表面积或高孔隙率开孔材料上。 本公开包括制造这样的装置的方法，包括MOCVD和ALD。 本公开还包括独立的或与一般照明（照明）实用程序组合的光催化体系，其可以包括无源流体交换，用户可配置的光催化光学元件，通过一般照明光源，专用蓝光或UV光实现的光催化照明 来源或其组合，以及组合的光催化和照明系统的操作方法。 本公开还包括结合在封装的LED，LED灯和LED灯具的表面上的光催化材料，其中光催化材料结合在光学上有用的照明器表面上或在远程荧光体的表面上。 本公开还包括掺入表面的超薄光催化材料以影响抗菌和抗病毒性质。

公开(公告)号：US20150111725A1

公开(公告)日：2015-04-23

申请号：US14520328

申请日：2014-10-21

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

IPC分类号： B01J21/06

CPC分类号： A61L9/00 ,  A61L2/232 ,  A61L2/238 ,  B01J21/063

摘要： Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems. The disclosure also includes photocatalytic materials incorporated on the surface of packaged LEDs, LED lamps and LED luminaires, with photocatalytic materials incorporated on optically useful luminaire surfaces or on the surface of the remote phosphor. The disclosure also includes ultrathin photocatalytic materials incorporated on surfaces to affect antibacterial and antiviral properties.

摘要翻译： 公开了新型光催化装置，其利用形成在具有高透射率，高反射率或散射特性的光学元件上形成的超薄二氧化钛基光催化材料，或在高表面积或高孔隙率开孔材料上。 本公开包括制造这样的装置的方法，包括MOCVD和ALD。 本公开还包括独立的或与一般照明（照明）实用程序组合的光催化体系，其可以包括无源流体交换，用户可配置的光催化光学元件，通过一般照明光源，专用蓝光或UV光实现的光催化照明 来源或其组合，以及组合的光催化和照明系统的操作方法。 本公开还包括结合在封装的LED，LED灯和LED灯具的表面上的光催化材料，其中光催化材料结合在光学上有用的照明器表面上或在远程荧光体的表面上。 本公开还包括掺入表面的超薄光催化材料以影响抗菌和抗病毒性质。

公开(公告)号：US08282023B2

公开(公告)日：2012-10-09

申请号：US13149666

申请日：2011-05-31

申请人： W. Karl Olander ,  James V. McManus ,  Steven J. Hultquist ,  Jose I. Arno ,  Peter C. Van Buskirk

发明人： W. Karl Olander ,  James V. McManus ,  Steven J. Hultquist ,  Jose I. Arno ,  Peter C. Van Buskirk

IPC分类号： B01D53/02

CPC分类号： F17C11/00 ,  F17C2201/0109 ,  F17C2201/032 ,  F17C2201/035 ,  F17C2201/054 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2203/0639 ,  F17C2203/0678 ,  F17C2205/0184 ,  F17C2205/0326 ,  F17C2205/0329 ,  F17C2205/0338 ,  F17C2205/0391 ,  F17C2221/011 ,  F17C2221/013 ,  F17C2221/014 ,  F17C2221/031 ,  F17C2221/033 ,  F17C2221/035 ,  F17C2221/037 ,  F17C2223/0123 ,  F17C2223/013 ,  F17C2223/033 ,  F17C2223/035 ,  F17C2225/0123 ,  F17C2225/013 ,  F17C2225/033 ,  F17C2225/035 ,  F17C2225/038 ,  F17C2227/0114 ,  F17C2227/0135 ,  F17C2227/0157 ,  F17C2250/032 ,  F17C2250/0443 ,  F17C2250/0636 ,  F17C2270/0168 ,  F17C2270/02 ,  F17C2270/0518

摘要： Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and internal regulator-equipped fluid storage and dispensing vessels. The systems and processes are applicable to a wide variety of end-use applications, including storage and dispensing of hazardous fluids with enhanced safety. In a specific end-use application, reagent gas is dispensed to a semiconductor manufacturing facility from a large-scale, fixedly positioned fluid storage and dispensing vessel containing physical sorbent holding gas at subatmospheric pressure, with such vessel being refillable from a safe gas source of refill gas, as disclosed herein.

摘要翻译： 流体储存和分配系统以及用于供应流体的方法。 描述了流体存储和分配系统的各种布置，包括物理吸附剂流体存储和分配容器和内部调节器装备的流体存储和分配容器的排列。 这些系统和工艺适用于各种各样的最终用途应用，包括存储和分配危险液体，并具有更高的安全性。 在特定的最终用途应用中，反应气体从大规模固定位置的流体存储和分配容器中分配到半导体制造设备，所述流体储存和分配容器含有在低于大气压的气体保持气体的物理吸附剂，所述容器可再填充于安全气体源 再填充气体，如本文所公开的。

公开(公告)号：US20110097478A1

公开(公告)日：2011-04-28

申请号：US12978393

申请日：2010-12-23

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01G4/00 ,  C23C16/06 ,  C23C16/448 ,  C04B35/472

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。