公开(公告)号：US10068801B2

公开(公告)日：2018-09-04

申请号：US15617431

申请日：2017-06-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306 ,  B23K103/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09837315B2

公开(公告)日：2017-12-05

申请号：US14587677

申请日：2014-12-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC: B23K26/00 ,  H01L21/78 ,  B23K26/03 ,  B23K26/046 ,  B23K26/073 ,  B23K26/08 ,  B28D5/00 ,  C03B33/023 ,  C03B33/08 ,  C03B33/10 ,  C03C23/00 ,  B23K26/16 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/40 ,  B23K26/364 ,  B23K20/02 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K101/40 ,  G02F1/1368 ,  B23K103/00 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

公开(公告)号：US09824879B2

公开(公告)日：2017-11-21

申请号：US15478306

申请日：2017-04-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akinori Asai ,  Kenshi Fukumitsu

IPC: H01J65/04 ,  G03F7/20 ,  H01J61/073

CPC classification number: H01J65/04 ,  G03F7/70025 ,  H01J61/025 ,  H01J61/0737 ,  H01J61/26 ,  H01J65/042

Abstract: In a light source device, a control unit causes an energy density of a laser light in a lighting start region RS when a laser support light is maintained to be lower than an energy density of the laser light in the lighting start region RS when the laser support light is put on. For this reason, when the laser support light is maintained, a laser light L is radiated to the lighting start region RS at an energy density of a degree where sputtering does not occur. Therefore, in the light source device, because sputtering in a light emission sealing body can be suppressed, a sufficiently long life can be realized.

公开(公告)号：US09543256B2

公开(公告)日：2017-01-10

申请号：US15226662

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/544 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09543207B2

公开(公告)日：2017-01-10

申请号：US15226417

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L23/00 ,  H01L21/306 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract translation: 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：US09511449B2

公开(公告)日：2016-12-06

申请号：US14099236

申请日：2013-12-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhiro Atsumi ,  Koji Kuno ,  Masayoshi Kusunoki ,  Tatsuya Suzuki ,  Kenshi Fukumitsu ,  Fumitsugu Fukuyo

IPC: B23K26/06 ,  B23K26/40 ,  B23K26/38 ,  B23K26/04 ,  B28D5/00 ,  B23K26/00

CPC classification number: B23K26/048 ,  B23K26/046 ,  B23K26/0648 ,  B23K26/38 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  B28D5/0011 ,  H01L21/67092 ,  H01L21/78

Abstract: A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S 11 and S 12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

Abstract translation: 提供了一种可以有效地执行激光加工同时最小化激光束在待处理物体的端部中的会聚点的偏差的激光加工方法。 该激光加工方法包括：准备步骤，将透镜保持在初始位置，使得会聚点位于物体内的预定位置; 在将透镜保持在初始位置的同时发射用于处理的第一激光束并沿着主表面相对于彼此移动透镜和物体的第一处理步骤（S11和S12），以形成修改区域 在一端切割一条线; 以及第二处理步骤（S13和S14），其在形成要切割的线的一个端部中的改质区域之后，将透镜保持在初始位置，然后沿着彼此移动透镜和物体 主表面同时调整透镜与主表面之间的间隙释放后，形成改质区域。

公开(公告)号：US08673745B2

公开(公告)日：2014-03-18

申请号：US13975814

申请日：2013-08-26

Applicant: Hamamatsu Photonics K.K.

Inventor： Fumitsugu Fukuyo ,  Kenshi Fukumitsu

IPC: H01L21/301

CPC classification number: H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  C03B33/0222 ,  C03B33/033 ,  C03B33/07 ,  C03B33/074 ,  H01L2924/01015

Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

Abstract translation: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体，从而由于在物体1内由于多光子吸收而形成改质区域7，并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域，沿着被切割物体的线。 随后，物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂，从而沿着物体应该被切割的线路精确地切割物体1。

公开(公告)号：US20130344686A1

公开(公告)日：2013-12-26

申请号：US13975814

申请日：2013-08-26

Applicant: Hamamatsu Photonics K.K.

Inventor： Fumitsugu Fukuyo ,  Kenshi Fukumitsu

IPC: B23K26/00 ,  H01L21/78

CPC classification number: H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  C03B33/0222 ,  C03B33/033 ,  C03B33/07 ,  C03B33/074 ,  H01L2924/01015

Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

Abstract translation: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体，从而由于在物体1内由于多光子吸收而形成改质区域7，并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域，沿着被切割物体的线。 随后，物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂，从而沿着物体应该被切割的线路精确地切割物体1。