公开(公告)号：US5529959A

公开(公告)日：1996-06-25

申请号：US392222

申请日：1995-02-22

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/50 ,  H01L23/057 ,  H01L23/13 ,  H01L23/498 ,  H01L27/146 ,  H01L21/60

CPC分类号： H01L27/14625 ,  H01L21/50 ,  H01L23/057 ,  H01L23/13 ,  H01L23/49861 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L27/1462 ,  H01L27/14683 ,  H01L2924/12042 ,  H01L2924/15174 ,  H01L2924/16152 ,  H01L2924/16195 ,  Y10T29/49121

摘要： A charge-coupled device image sensor has a base of resin having a mount area on an upper surface with a charge-coupled device chip being connected to the mount area, leads mounted on the base and connected to the charge-coupled device chip through bonding wires, and a cover of resin joined to the upper surface of the base and having a downwardly open recess housing the charge-coupled device chip and the bonding wires. The leads include respective inner leads having respective joints connected to the bonding wires, the inner leads having portions, except the joints, embedded in the base, and respective outer leads extending from the inner leads.

公开(公告)号：US5234401A

公开(公告)日：1993-08-10

申请号：US017680

申请日：1993-02-11

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： A61F5/41

CPC分类号： A61F5/41 ,  A61F2005/412 ,  A61F2005/415

摘要： A penis erection assisting device contains a sealing member for sealingly accommodating a penis therein, the sealing member having an opening at one end thereof to insert the penis, an extracting hose connected to the sealing member and a pump for extracting air within the sealing member, an expandable circular bag member provided at the opening of the sealing member, and an exhaling hose for supplying air extracted by the pump into the circular bag member to expand the circular bag member.

摘要翻译： 阴茎勃起辅助装置包括用于密封地容纳阴茎的密封构件，所述密封构件的一端具有开口以插入阴茎，连接到密封构件的提取软管和用于在密封构件内抽取空气的泵， 设置在密封构件的开口处的可膨胀圆形袋构件，以及用于将由泵抽出的空气供给到圆形袋构件中以膨胀圆形袋构件的排气软管。

公开(公告)号：US07276429B2

公开(公告)日：2007-10-02

申请号：US11196967

申请日：2005-08-04

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14837 ,  H01L27/14843 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05099

摘要： A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

摘要翻译： 一种用于制造超薄半导体芯片的方法和利用经由绝缘层形成在支撑基板上的半导体层的超薄背照式固态图像拾取装置，以改善半导体层与支撑基板的分离性能，以及 从而提高生产力和质量。 该方法在衬底的相对侧上使用两个多孔剥离层以产生超薄衬底。

公开(公告)号：US20070087492A1

公开(公告)日：2007-04-19

申请号：US11556306

申请日：2006-11-03

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L21/31 ,  H01L21/00 ,  H01L21/469

CPC分类号： H01L21/02672 ,  C23C16/24 ,  C23C16/56 ,  C30B13/24 ,  H01L21/02535 ,  H01L21/2022 ,  H01L27/3211 ,  H01L27/3248 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/6678 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78681 ,  H01L29/78684 ,  H01L51/5284 ,  H01L2251/5315

摘要： An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.

摘要翻译： 本发明的目的是提供一种容易形成多晶半导体薄膜的方法，例如具有高结晶度和高质量的多晶硅或廉价的单晶半导体薄膜，结晶半导体薄膜 具有大的面积，并且提供用于处理上述方法的装置。 在形成在基板（1）上具有高结晶度和大晶粒尺寸的诸如多晶硅薄膜的多晶（或单晶）半导体薄膜（7）或形成具有多晶 （1）上的低结晶性半导体薄膜（7A）的形成方法，其特征在于，在所述基板（1）上形成低结晶半导体薄膜（7A） 结晶半导体薄膜（7A）通过闪光灯退火进行融合，半融合或非融合状态，以促进低结晶半导体薄膜的结晶，从而使多晶（单晶）半导体 得到薄膜（7）。 还公开了一种用于形成半导体器件的方法和用于处理该方法的设备。

公开(公告)号：US20060204604A1

公开(公告)日：2006-09-14

申请号：US10548381

申请日：2004-03-11

申请人： Hideo Yamanaka ,  Shigeru Takeuchi

发明人： Hideo Yamanaka ,  Shigeru Takeuchi

IPC分类号： B29B9/06

CPC分类号： B29B9/065 ,  B29C47/0014 ,  B29C47/0066 ,  B29C47/30 ,  B29C47/862 ,  B29C47/8815 ,  B29C2793/0027

摘要： A granulating die B is provided with a resin discharge surface 5a to which a flow of water is contacted; and a plurality of nozzles 8 which communicate to a cylinder of an extruder are provided in this resin discharge surface 5a. Upon the resin discharge surface 5a, these nozzles 8 are not formed in at least one of its regions P which are in the direction of inflow of the flow of water and in the direction of outflow of the flow of water, and its regions R which are in directions orthogonal to this direction of inflow of said flow of water and this direction of outflow of said flow of water, but are only formed in the other regions Q thereof.

摘要翻译： 造粒模B具有与水接触的树脂排出面5a， 并且在该树脂排出面5a中设置有与挤出机的圆筒连通的多个喷嘴8。 在树脂排出面5a上，这些喷嘴8不形成在其水流方向和水流方向的区域P的至少一个区域中，并且其区域R 其在与所述水流的该流入方向正交的方向和所述水流的流出方向上，但仅形成在其它区域Q中。

公开(公告)号：US06992832B2

公开(公告)日：2006-01-31

申请号：US11104913

申请日：2005-04-13

申请人： Hideo Yamanaka ,  Kikuo Kaise

发明人： Hideo Yamanaka ,  Kikuo Kaise

IPC分类号： G02B27/10 ,  G02F1/1335

CPC分类号： G02B3/0031 ,  G02B3/0056 ,  G02F1/133526 ,  G02F2001/133567 ,  G02F2202/023 ,  Y10S359/90

摘要： A method of producing a microlens array includes a patterning step of forming a first optical resin layer having a first refractive index on a transparent substrate and forming a plurality of microlens planes arrayed in a two-dimensional pattern on the front surface of the first optical resin layer; a planarizing step of forming a planarized second optical resin layer; a joining step of providing a support layer on which a transparent protective film is previously formed; and a removing step of removing the support layer in such a manner that only the protective film remains on the second optical resin layer. The planarizing step is performed by filling irregularities of the microlens planes with a resin having a second refractive index and planarizing the front surface, opposed to the microlens planes, of the resin, to form the planarized second optical resin layer, and the joining step is performed by joining the support layer to the planarized second optical resin layer. With this method, a microlens array excellent in surface accuracy and flatness can be produced without the need of provision of a support layer made from glass.

公开(公告)号：US20050202586A1

公开(公告)日：2005-09-15

申请号：US11104963

申请日：2005-04-13

申请人： Hideo Yamanaka ,  Kikuo Kaise

发明人： Hideo Yamanaka ,  Kikuo Kaise

IPC分类号： G02B3/00 ,  G02F1/1335 ,  H01L21/00

CPC分类号： G02B3/0031 ,  G02B3/0056 ,  G02F1/133526 ,  G02F2001/133567 ,  G02F2202/023 ,  Y10S359/90

摘要： A method of producing a microlens array includes a patterning step of forming a first optical resin layer having a first refractive index on a transparent substrate and forming a plurality of microlens planes arrayed in a two-dimensional pattern on the front surface of the first optical resin layer; a planarizing step of forming a planarized second optical resin layer; a joining step of providing a support layer on which a transparent protective film is previously formed; and a removing step of removing the support layer in such a manner that only the protective film remains on the second optical resin layer. The planarizing step is performed by filling irregularities of the microlens planes with a resin having a second refractive index and planarizing the front surface, opposed to the microlens planes, of the resin, to form the planarized second optical resin layer, and the joining step is performed by joining the support layer to the planarized second optical resin layer. With this method, a microlens array excellent in surface accuracy and flatness can be produced without the need of provision of a support layer made from glass.

公开(公告)号：US06653212B1

公开(公告)日：2003-11-25

申请号：US09719994

申请日：2001-04-09

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto

IPC分类号： H01L2120

CPC分类号： C23C16/0236 ,  C23C16/44 ,  Y10S438/903

摘要： A thin film forming apparatus S having a vacuum chamber 1, a substrate 10, a thermal catalyst 5, and a heating means 5a for heating this thermal catalyst 5, wherein a gas introduction system 3 for feeding the gas is connected in the vacuum chamber 1, the gas is fed from this gas introduction system 3 to the vacuum chamber 1, and thin films are formed on the surface of the substrate 10 by utilizing a thermal decomposition reaction or catalytic reaction by the thermal catalyst 5, the gas introduction system 3 is for introducing a carrier gas containing hydrogen and a material gas for forming the thin film on the substrate 10, and the carrier gas is constantly fed into the vacuum chamber 1 at least during the formation of the thin film.

摘要翻译： 具有真空室1，基板10，热催化剂5和用于加热该热催化剂5的加热装置5a的薄膜形成装置S，其中用于供给气体的气体引入系统3连接在真空室1中 气体从该气体导入系统3供给至真空室1，利用热催化剂5的热分解反应或催化反应，在基板10的表面形成薄膜，气体导入系统3为 用于在衬底10上引入含有氢的载气和用于形成薄膜的材料气体，并且至少在形成薄膜期间将载气恒定地供给到真空室1中。

公开(公告)号：US06432348B1

公开(公告)日：2002-08-13

申请号：US09334662

申请日：1999-06-17

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： B29C7104

CPC分类号： C09D5/4419

摘要： A process for forming a polyimide composite electro-deposited film, which excels in durability of ink repelling function, wear resistance or mold-releasing property, has the following steps. An electrically conductive film is formed on at lest one side of a resin substrate. The polyimide composite electro-deposited film is formed on the electrically conductive film, while allowing co-deposition of at least one type of eutectic fine particles selected from the group consisting of water-repellant fine particles, wear-resistant fine particles and mold-releasing fine particles. This process can be used in the production of a nozzle plate having a discharge nozzle, by employing the water-repellant fine particles as the eutectic fine particles. When a metallic substrate is used, the polyimide composite electro-deposited film may be directly formed on one or both surfaces of such a metallic substrate.

摘要翻译： 用于形成聚酰亚胺复合电沉积膜的方法具有以下步骤：其耐油墨性，耐磨损性或脱模性优异。 在树脂基板的至少一侧形成导电膜。 在导电膜上形成聚酰亚胺复合电沉积膜，同时允许至少一种选自疏水性细颗粒，耐磨细颗粒和脱模剂的共晶细颗粒共沉积 细颗粒。 通过使用疏水性细颗粒作为共晶细颗粒，该方法可用于制造具有排出喷嘴的喷嘴板。 当使用金属基板时，可以在这种金属基板的一个或两个表面上直接形成聚酰亚胺复合电沉积膜。

公开(公告)号：US06399429B1

公开(公告)日：2002-06-04

申请号：US09486619

申请日：2000-02-29

申请人： Hisayoshi Yamoto ,  Hideo Yamanaka ,  Yuichi Satou ,  Hajime Yagi

发明人： Hisayoshi Yamoto ,  Hideo Yamanaka ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/76262 ,  H01L21/86 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/6678

摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.

摘要翻译： 将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。 将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。 在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。 因此，硅层在低温下均匀地外延生长。