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21.发明申请PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权使用光电转换装置的光电转换装置和图像拾取系统公开(公告)号：US20110027934A1
公开(公告)日：2011-02-03
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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22.发明授权公开(公告)号：US07838918B2
公开(公告)日：2010-11-23
申请号：US12026623
申请日：2008-02-06
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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23.发明授权公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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公开(公告)号：US20090130782A1
公开(公告)日：2009-05-21
申请号：US12266725
申请日：2008-11-07
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for manufacturing a semiconductor device that includes a multilayer wiring structure in which insulating layers and wiring layers each with a plurality of conductor lines are alternately stacked on each other. The method includes steps of forming a first wiring layer on a first insulating layer, detecting a defect in the first wiring layer on the first insulating layer, and determining whether or not the defect is to be irradiated with a focused ion beam, according to a detection result. If it is determined that the defect is to be irradiated, the defect is irradiated with a focused ion beam and then a second insulating layer is formed on the first wiring layer disposed on the first insulating layer. If it is determined that the defect is not to be irradiated with a focused ion beam, the second insulating layer is formed on the first wiring layer disposed on the first insulating layer without irradiating the defect.
摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件包括多层布线结构，其中每个具有多条导体线的绝缘层和布线层彼此交替堆叠。 该方法包括以下步骤：在第一绝缘层上形成第一布线层，检测第一绝缘层上的第一布线层中的缺陷，以及确定是否要用聚焦离子束照射缺陷，根据 检测结果。 如果确定要照射缺陷，则用聚焦离子束照射缺陷，然后在布置在第一绝缘层上的第一布线层上形成第二绝缘层。 如果确定不用聚焦离子束照射缺陷，则在不照射缺陷的情况下，在布置在第一绝缘层上的第一布线层上形成第二绝缘层。
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25.发明授权Semiconductor substrate for solid-state image pickup device and producing method therefor 有权用于固态图像拾取装置的半导体衬底及其制造方法公开(公告)号：US07387952B2
公开(公告)日：2008-06-17
申请号：US11291955
申请日：2005-12-02
IPC分类号： H01L21/322
CPC分类号： H01L27/146 , H01L27/14698 , H01L31/03682 , H01L31/182 , Y02P70/521
摘要： A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
摘要翻译： 一种用于形成像素区域的半导体衬底，其具有多个用于光电转换的像素，所述半导体衬底包括厚度为0.5-2.0的多晶硅膜，在像素区域承载表面的后表面上，并且具有 氧浓度为1.3E18-1.5E18原子/ cm 3（旧ASTM）。
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26.发明申请Semiconductor substrate for solid-state image pickup device and producing method therefor 有权用于固态图像拾取装置的半导体衬底及其制造方法公开(公告)号：US20060124929A1
公开(公告)日：2006-06-15
申请号：US11291955
申请日：2005-12-02
IPC分类号： H01L31/0376
CPC分类号： H01L27/146 , H01L27/14698 , H01L31/03682 , H01L31/182 , Y02P70/521
摘要： A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
摘要翻译： 一种用于形成像素区域的半导体衬底，其具有多个用于光电转换的像素，所述半导体衬底包括厚度为0.5-2.0的多晶硅膜，在像素区域承载表面的后表面上，并且具有 氧浓度为1.3E18-1.5E18原子/ cm 3（旧ASTM）。
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27.发明申请Photoelectric Conversion Device and Camera Using Photoelectric Conversion Device 有权光电转换装置及相机使用光电转换装置公开(公告)号：US20080230685A1
公开(公告)日：2008-09-25
申请号：US12111342
申请日：2008-04-29
IPC分类号： H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。
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公开(公告)号：US5700719A
公开(公告)日：1997-12-23
申请号：US414049
申请日：1995-03-30
IPC分类号： H01L23/52 , C23C14/56 , C23C16/04 , H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/532 , H01L29/49 , H01L21/443
CPC分类号： H01L29/4933 , C23C14/568 , C23C16/04 , H01L21/823842 , H01L21/823871 , H01L23/53271 , H01L29/4925 , H01L2924/0002 , Y10S148/02
摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.
摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。
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29.发明授权Method for making semiconductor device with metal deposited on electron donating surface of gate electrode 失效制造半导体器件的方法，金属沉积在栅电极的给电子表面上
公开(公告)号：US5599741A
公开(公告)日：1997-02-04
申请号：US479385
申请日：1995-06-07
IPC分类号： H01L21/266 , H01L21/336 , H01L21/768 , H01L29/49 , H01L29/78 , H01L21/44 , H01L21/22
CPC分类号： H01L29/6659 , H01L21/266 , H01L21/76879 , H01L29/4925 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.
摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。
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公开(公告)号：US5561317A
公开(公告)日：1996-10-01
申请号：US478447
申请日：1995-06-07
申请人： Genzo Momma , Hiroshi Yuzurihara
发明人： Genzo Momma , Hiroshi Yuzurihara
IPC分类号： G03F7/20 , H01L21/027 , H01L23/544
CPC分类号： G03F7/70433 , G03F7/2002 , G03F7/70475 , H01L21/0274 , H01L2924/0002
摘要： Disclosed is a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device is formed. The manufacturing method includes the steps of dividing the desired pattern into a plurality of portions, and conducting exposure on the dividing patterns in a joined fashion.
摘要翻译： 公开了一种制造半导体器件的方法，其中形成了具有比在曝光装置的一个曝光处理步骤中可获得的场尺寸大的面积尺寸的期望图案。 该制造方法包括以下步骤：将期望的图案分成多个部分，并以连接的方式在分割图案上进行曝光。
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