公开(公告)号：US20150097153A1

公开(公告)日：2015-04-09

申请号：US14549680

申请日：2014-11-21

Applicant: Intermolecular Inc.

Inventor： Prashant B. Phatak ,  Tony P. Chiang ,  Pragati Kumar ,  Michael Miller

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/8615 ,  H01L45/08 ,  H01L45/10 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165 ,  H01L45/1658 ,  H01L47/00

Abstract: Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.

Abstract translation: 描述了非易失性电阻式切换存储器，包括在第一电极和第二电极之间具有第一电极，第二电极，金属氧化物的存储元件。 使用大容量介导的开关的金属氧化物开关具有大于4电子伏特（eV）的带隙，具有用于金属氧化物的厚度每100埃至少一伏特的设定操作的设定电压，并且具有 漏电流密度小于每平方厘米40安培（A / cm2），每0.5伏（V），金属氧化物厚度每20埃测得。

公开(公告)号：US08981327B1

公开(公告)日：2015-03-17

申请号：US14138853

申请日：2013-12-23

Applicant: Intermolecular, Inc.

Inventor： Monica Sawkar Mathur ,  Prashant B. Phatak

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a titanium oxide-carbon-doped silicon-titanium oxide multilayer stack. Electrode materials may include one of ruthenium, titanium nitride, or carbon. The titanium oxide layers may be replaced by one of zirconium oxide, hafnium oxide, aluminum oxide, magnesium oxide, or a lanthanide oxide.

Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于多层介质堆叠。 控制元件可以包括氧化钛 - 碳掺杂的硅 - 氧化钛多层堆叠。 电极材料可以包括钌，氮化钛或碳中的一种。 氧化钛层可以由氧化锆，氧化铪，氧化铝，氧化镁或镧系元素氧化物中的一种代替。

公开(公告)号：US08980709B2

公开(公告)日：2015-03-17

申请号：US14028281

申请日：2013-09-16

Applicant: Intermolecular, Inc.

Inventor： Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak

IPC: H01L21/336 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641

Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

公开(公告)号：US08889479B2

公开(公告)日：2014-11-18

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20140273525A1

公开(公告)日：2014-09-18

申请号：US14019961

申请日：2013-09-06

Applicant: Intermolecular, Inc.

Inventor： Kurt Pang ,  Sean Barstow ,  Chi-I Lang ,  Michael Miller ,  Sandip Niyogi ,  Prashant B. Phatak

IPC: H01L21/02

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al2O3 films.

Abstract translation: 通过原子层沉积（ALD）沉积具有适合于高k栅极电介质的低泄漏电流的金属氧化物膜（例如氧化铝）。 金属沉积阶段后的清洗时间为5-15秒，氧化阶段后的吹扫时间延长超过60秒。 延长后氧化吹扫在30Å厚的Al2O3薄膜中产生了数量级的泄漏电流。

公开(公告)号：US20140247649A1

公开(公告)日：2014-09-04

申请号：US14276229

申请日：2014-05-13

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Prashant B. Phatak

IPC: G11C13/00

CPC classification number: G11C13/02 ,  G11C7/00 ,  G11C11/36 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/72

Abstract: According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

Abstract translation: 根据各种实施例，使用双极开关的电阻式开关存储器元件和存储元件阵列包括仅包括不是齐纳二极管的单个二极管的选择元件。 即使当在二极管的反向偏置方向上施加小于二极管的击穿电压的开关电压时，本文所述的电阻式开关存储元件也可以切换。 存储器元件能够在瞬态脉冲电压对存储元件可见时的非常短的时间内进行切换，因此每个存储器单元可以使用单个二极管。

公开(公告)号：US08750021B2

公开(公告)日：2014-06-10

申请号：US13957324

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Prashant B. Phatak

IPC: G11C11/36 ,  G11C7/00 ,  G11C17/06 ,  G11C5/02 ,  G11C13/00 ,  G11C13/02 ,  G11C13/04

CPC classification number: G11C13/02 ,  G11C7/00 ,  G11C11/36 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/72

Abstract: According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

Abstract translation: 根据各种实施例，使用双极开关的电阻式开关存储器元件和存储元件阵列包括仅包括不是齐纳二极管的单个二极管的选择元件。 即使当在二极管的反向偏置方向上施加小于二极管的击穿电压的开关电压时，这里描述的电阻式开关存储元件也可以切换。 存储器元件能够在瞬态脉冲电压对存储元件可见时的非常短的时间内进行切换，因此每个存储器单元可以使用单个二极管。

公开(公告)号：US20130314974A1

公开(公告)日：2013-11-28

申请号：US13957324

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Prashant B. Phatak

IPC: G11C13/00

CPC classification number: G11C13/02 ,  G11C7/00 ,  G11C11/36 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/72

Abstract: According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

公开(公告)号：US08501505B2

公开(公告)日：2013-08-06

申请号：US13731715

申请日：2012-12-31

Applicant: Intermolecular, Inc.

Inventor： Guarav Verma ,  Tony P. Chiang ,  Imran Hashim ,  Sandra G. Malhotra ,  Prashant B. Phatak ,  Kurt H. Weiner

IPC: H01L21/00

CPC classification number: G01R31/2831 ,  G01R31/2834 ,  H01L22/34

Abstract: In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

公开(公告)号：US20130043454A1

公开(公告)日：2013-02-21

申请号：US13659037

申请日：2012-10-24

Applicant: INTERMOLECULAR, INC.

Inventor： Alexander Gorer ,  Tony P. Chiang ,  Igor Ivanov ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L45/10 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

Abstract translation: 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。