公开(公告)号：US08778792B2

公开(公告)日：2014-07-15

申请号：US13758386

申请日：2013-02-04

Applicant: International Business Machines Corporation

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Ekta Misra ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  George J. Scott

IPC: H01L21/44

CPC classification number: H01L24/10 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02126 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0348 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05016 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/0508 ,  H01L2224/05094 ,  H01L2224/05096 ,  H01L2224/051 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05562 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/01027 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Solder bump connections and methods for fabricating solder bump connections. The method includes forming a layer stack containing first and second conductive layers, forming a dielectric passivation layer on a top surface of the second conductive layer, and forming a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer. The method further includes forming a conductive plug in the via opening. The solder bump connection includes first and second conductive layers comprised of different conductors, a dielectric passivation layer on a top surface of the second conductive layer, a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer, and a conductive plug in the via opening.

Abstract translation: 焊接凸块连接和制造焊料凸点连接的方法。 该方法包括形成包含第一和第二导电层的层叠层，在第二导电层的顶表面上形成电介质钝化层，以及形成延伸穿过介电钝化层的通孔至第二导电层的顶表面。 该方法还包括在通孔开口中形成导电塞。 焊料凸点连接包括由不同导体组成的第一和第二导电层，在第二导电层的顶表面上的介电钝化层，延伸穿过介电钝化层到第二导电层顶表面的通孔，以及 导电塞在通孔开口中。

公开(公告)号：US20140183757A1

公开(公告)日：2014-07-03

申请号：US14202067

申请日：2014-03-10

Applicant: International Business Machines Corporation

Inventor： Brian M. Erwin ,  Karen P. McLaughlin ,  Ekta Misra

IPC: H01L21/768 ,  H01L23/485

CPC classification number: H01L23/3171 ,  H01L21/76804 ,  H01L21/7681 ,  H01L21/76816 ,  H01L23/3192 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/1031 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05094 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes forming a passivation layer on a least one capping layer of the semiconductor device, and forming an encapsulant layer on the passivation layer. The method further includes patterning the encapsulant layer to expose a portion of the passivation layer and forming a final via opening in the passivation layer. A conductive material is deposited in the final via opening. The method further includes planarizing the conductive material until reaching a remaining portion of the encapsulant layer such that the conductive material is flush with the encapsulant layer and the passivation layer is preserved.

Abstract translation: 制造半导体器件的方法包括在半导体器件的至少一个覆盖层上形成钝化层，并在钝化层上形成密封剂层。 该方法还包括图案化封装层以暴露钝化层的一部分并在钝化层中形成最终的通孔。 导电材料沉积在最终通孔中。 该方法还包括平坦化导电材料，直到到达封装层的剩余部分，使得导电材料与密封剂层齐平并且保护钝化层。

公开(公告)号：US08674506B2

公开(公告)日：2014-03-18

申请号：US13873801

申请日：2013-04-30

Applicant: International Business Machines Corporation

Inventor： Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Gary LaFontant ,  Ian D. Melville ,  Ekta Misra ,  George J. Scott ,  Krystyna W. Semkow ,  Timothy D. Sullivan ,  Robin A. Susko ,  Thomas A. Wassick ,  Xiaojin Wei ,  Steven L. Wright

IPC: H01L23/498

CPC classification number: H01L23/49816 ,  H01L21/76804 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05094 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

Abstract translation: 公开了减少焊球中的最大电流密度的结构和方法。 一种方法包括在最后的布线层中形成接触焊盘，并且形成从接触焊盘的侧边缘延伸到多个通孔中的多个通孔的接触焊盘的多个导线。 多个导线中的每一根具有基本上相同的电阻。

公开(公告)号：US20130320528A1

公开(公告)日：2013-12-05

申请号：US13962194

申请日：2013-08-08

Applicant: International Business Machines Corporation

Inventor： Brian M. Erwin ,  Ian Melville ,  Ekta Misra ,  George J. Scott

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03616 ,  H01L2224/03848 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13111 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2224/11912 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/00

Abstract: A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.

Abstract translation: 提供焊料凸块支撑结构及其制造方法。 焊料凸块支撑结构包括在硅衬底上形成的级间电介质（ILD）层。 ILD层具有多个导电通孔。 该结构还包括形成在ILD层上的第一绝缘层。 焊料凸块支撑结构还包括形成在ILD层上的基座构件，其包括形成在由第二绝缘层同轴围绕的ILD层中的多个导电通孔上方的导电材料。 第二绝缘层比第一绝缘层厚。 该结构还包括形成在导电材料之上并与导电材料电接触并且形成在基座构件的第二绝缘层的至少一部分上的封盖凸块下金属（UBM）层。