公开(公告)号：US10720538B2

公开(公告)日：2020-07-21

申请号：US16521629

申请日：2019-07-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Bruce W. Porth ,  Steven M. Shank

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  G02B6/42 ,  H01L31/09 ,  G06F30/30 ,  G02B6/122 ,  G02B6/136 ,  H01L31/0203 ,  H01L29/06 ,  H01L31/0304 ,  G02B6/12 ,  H01L31/0352 ,  H01L31/20 ,  G02B6/13

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

公开(公告)号：US10546962B2

公开(公告)日：2020-01-28

申请号：US15980014

申请日：2018-05-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Tymon Barwicz ,  William M. Green ,  Marwan H. Khater ,  Jessie C. Rosenberg ,  Steven M. Shank

IPC: H01L21/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L27/144 ,  G02B6/12 ,  H01L21/3205 ,  H01L31/0232 ,  G02B6/42 ,  H01L31/02 ,  H01L31/153 ,  H01L21/84 ,  H01L49/02

Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

公开(公告)号：US10361123B2

公开(公告)日：2019-07-23

申请号：US15799862

申请日：2017-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Mark D. Jaffe ,  Steven M. Shank ,  Anthony K. Stamper

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/482 ,  H01L21/762 ,  H01L23/532 ,  H01L27/12 ,  H01L29/06 ,  H01L29/10 ,  H01L21/683 ,  H01L21/74

Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

公开(公告)号：US10043940B2

公开(公告)日：2018-08-07

申请号：US15404981

申请日：2017-01-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Bruce W. Porth ,  Steven M. Shank

IPC: H01L31/18 ,  H01L31/20 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/0352

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

公开(公告)号：US20180040509A1

公开(公告)日：2018-02-08

申请号：US15788536

申请日：2017-10-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  Mark D. Jaffe ,  Steven M. Shank ,  Anthony K. Stamper

IPC: H01L21/768 ,  H01L21/74 ,  H01L21/762 ,  H01L23/482 ,  H01L29/06 ,  H01L27/12 ,  H01L21/683 ,  H01L23/532 ,  H01L29/10

Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

公开(公告)号：US09887156B2

公开(公告)日：2018-02-06

申请号：US15234913

申请日：2016-08-11

Applicant: International Business Machines Corporation

Inventor： Jeffrey P. Gambino ,  Mark D. Jaffe ,  Steven M. Shank ,  Anthony K. Stamper

IPC: H01L21/46 ,  H01L23/528 ,  H01L21/768 ,  H01L21/762 ,  H01L21/683 ,  H01L23/522 ,  H01L27/12 ,  H01L29/06 ,  H01L23/485

CPC classification number: H01L23/528 ,  H01L21/6835 ,  H01L21/76224 ,  H01L21/76251 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/1203 ,  H01L29/0649 ,  H01L2221/68327 ,  H01L2221/68372

Abstract: A back-side device structure with a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, a trench that extends through the device layer and that partially extends through the buried insulator layer, at least one dielectric layer that is formed on the device layer and includes a first opening that communicates with the trench and a contact plug that fills the trench. A final substrate is connected to the buried insulator layer such that the contact plug contacts metallization of the final substrate. The contact plug is externally connected with a source to provide signals to the back-side device structure through a wire formed in the at least one dielectric layer.

公开(公告)号：US20170125628A1

公开(公告)日：2017-05-04

申请号：US15404981

申请日：2017-01-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Bruce W. Porth ,  Steven M. Shank

IPC: H01L31/20 ,  H01L31/0352 ,  H01L31/0203 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/208 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/13 ,  G02B6/136 ,  G02B6/42 ,  G02B6/4203 ,  G02B6/4295 ,  G02B2006/12061 ,  G02B2006/12123 ,  G06F17/5045 ,  H01L29/0649 ,  H01L31/0203 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/182 ,  H01L31/184 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/544 ,  Y02P70/521

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

公开(公告)号：US09634159B2

公开(公告)日：2017-04-25

申请号：US14833542

申请日：2015-08-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Bruce W. Porth ,  Steven M. Shank

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  G02B6/122 ,  G02B6/136 ,  G02B6/42 ,  H01L31/0203 ,  H01L31/09 ,  G06F17/50 ,  H01L29/06 ,  H01L31/0304 ,  G02B6/12

CPC classification number: H01L31/208 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/13 ,  G02B6/136 ,  G02B6/42 ,  G02B6/4203 ,  G02B6/4295 ,  G02B2006/12061 ,  G02B2006/12123 ,  G06F17/5045 ,  H01L29/0649 ,  H01L31/0203 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/182 ,  H01L31/184 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/544 ,  Y02P70/521

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

公开(公告)号：US09547125B2

公开(公告)日：2017-01-17

申请号：US14694265

申请日：2015-04-23

Applicant: International Business Machines Corporation

Inventor： Solomon Assefa ,  William M. Green ,  Steven M. Shank ,  Yurii A. Vlasov

IPC: H01L27/146 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/18 ,  G02B6/13 ,  G02B6/136 ,  H01L31/0745 ,  H01L31/028 ,  G02B6/132 ,  G02B6/42 ,  H01L21/8238 ,  H01L31/16

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4257 ,  G02B6/4291 ,  G02B2006/12085 ,  G02B2006/121 ,  G02B2006/12123 ,  H01L21/8238 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/165 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/547

Abstract: A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.

Abstract translation: 形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在第一绝缘体上硅区上形成CMOS器件，在第二绝缘体上硅区上形成硅光波导，并形成 浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。 在STI区域的第一区域内，第一锗材料沉积在半导体光波导的第一侧壁附近。 在STI区域的第二区域内，与半导体光波导的第二侧壁相邻地沉积第二锗材料，由此第二侧壁与第一侧壁相对。 第一和第二锗材料形成有源区，其从半导体光波导的第一和第二侧壁瞬时接收传播的光信号。

公开(公告)号：US20160181445A1

公开(公告)日：2016-06-23

申请号：US14580564

申请日：2014-12-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa ,  Tymon Barwicz ,  William M. Green ,  Marwan H. Khater ,  Jessie C. Rosenberg ,  Steven M. Shank

IPC: H01L31/0216 ,  H01L27/144 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L31/0203 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/4253 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/32053 ,  H01L21/84 ,  H01L27/1443 ,  H01L28/20 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/153 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.