公开(公告)号：US20210166935A1

公开(公告)日：2021-06-03

申请号：US17148729

申请日：2021-01-14

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro ODA ,  Hitoshi OSAKI ,  Masafumi HORI ,  Takehiko NARUOKA

IPC: H01L21/027 ,  C08F112/08 ,  C09D125/06 ,  H01L21/28 ,  H01L21/321 ,  H01L21/285 ,  C08F8/00 ,  H01L21/02 ,  H01L21/311

Abstract: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

公开(公告)号：US20200013617A1

公开(公告)日：2020-01-09

申请号：US16504581

申请日：2019-07-08

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Miki TAMADA ,  Hitoshi OSAKI ,  Motohiro SHIRATANI ,  Tomoki NAGAI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07C255/09 ,  C07C255/34 ,  C07C255/31

Abstract: A substrate treatment method includes: overlaying a film on a surface of a substrate which includes a first region including a metal atom in a surface layer thereof, using a directed self-assembling material which contains a compound having no less than 6 carbon atoms and including at least one cyano group. After the overlaying, the film on a region other than the first region is removed. After the removing, a pattern principally containing a metal oxide is formed by an Atomic Layer Deposition process or a Chemical Vapor Deposition process on the region other than the first region, of the surface of the substrate.

公开(公告)号：US20190233561A1

公开(公告)日：2019-08-01

申请号：US16239592

申请日：2019-01-04

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro Oda ,  Hitoshi Osaki ,  Masafumi Hori ,  Takehiko Naruoka

IPC: C08F220/12 ,  C09D201/02 ,  H01L21/027 ,  C09D153/00 ,  G03F7/00

CPC classification number: C08F220/12 ,  C09D153/00 ,  C09D201/02 ,  G03F7/0002 ,  H01L21/027 ,  H01L21/3065

Abstract: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.

公开(公告)号：US20190194365A1

公开(公告)日：2019-06-27

申请号：US16289938

申请日：2019-03-01

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro ODA ,  Masafumi HORI ,  Hitoshi OSAKI ,  Takehiko NARUOKA

IPC: C08F12/20 ,  C23C16/455 ,  C08F12/08 ,  C08F20/22 ,  B05D7/24 ,  B05D7/14 ,  B05D3/10 ,  B05D3/14

CPC classification number: C08F12/20 ,  B05D3/02 ,  B05D3/107 ,  B05D3/148 ,  B05D7/14 ,  B05D7/24 ,  C08F12/08 ,  C08F20/22 ,  C08L101/04 ,  C23C16/45525

Abstract: A composition includes a first polymer and a solvent. The first polymer includes a first structural unit including a fluorine atom, and a group including a first functional group at an end of a main chain or a side chain of the first polymer. The first functional group is capable of forming a bond with a metal or a metalloid. The first structural unit preferably includes a fluorinated hydrocarbon group. The first structural unit is preferably derived from a (meth)acrylic ester containing a fluorine atom, or a styrene compound containing a fluorine atom. The first structural unit preferably contains 6 or more fluorine atoms.

公开(公告)号：US20170248847A1

公开(公告)日：2017-08-31

申请号：US15595030

申请日：2017-05-15

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: G03F7/038 ,  H01L21/311 ,  G03F7/039 ,  G03F7/004 ,  C09D153/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

CPC classification number: G03F7/038 ,  B05D3/064 ,  C08L2201/56 ,  C09D125/14 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38 ,  H01L21/027 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/31138

Abstract: A composition for a base of a directed self-assembling film includes a compound including an oxo acid group, and a solvent. The compound is preferably represented by formula (1). A represents an organic group having 10 or more carbon atoms and having a valency of n. B represents an oxo acid group. n is an integer of 1 to 200. In a case where n is 2 or greater, a plurality of Bs are identical or different. AB)n   (1)

公开(公告)号：US20150277223A1

公开(公告)日：2015-10-01

申请号：US14668335

申请日：2015-03-25

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Tomoki NAGAI

IPC: G03F7/004 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0002 ,  C08F297/026 ,  C08K5/42 ,  C08L53/00 ,  G03F7/0035 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/31133 ,  H01L21/31138

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Abstract translation: 用于图案形成的组合物包括嵌段共聚物和溶剂。 嵌段共聚物包括在嵌段共聚物的主链的至少一个末端具有反应性基团的基团。 图案形成方法包括使用该组合物直接或间接地在基底上提供定向的自组装膜。 定向自组装膜包括包括多个相的相分离结构。 去除定向自组装膜的多个相的一部分。

公开(公告)号：US20150225601A1

公开(公告)日：2015-08-13

申请号：US14620935

申请日：2015-02-12

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Tomoki NAGAI

IPC: C09D153/00 ,  B05D3/02 ,  B05D3/06 ,  B05D3/10

CPC classification number: C09D153/00 ,  B05D1/185 ,  C08F212/08 ,  C08F230/08 ,  C08F297/026 ,  G03F7/0002

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.

Abstract translation: 用于图案形成的组合物包括嵌段共聚物和溶剂。 嵌段共聚物能够通过定向自组装形成相分离结构。 嵌段共聚物包括第一嵌段和第二嵌段。 第一块包括包含至少两个硅原子的第一重复单元。 第二块包括不包括硅原子的第二重复单元。 构成第一重复单元的原子的原子量之和不大于700。

公开(公告)号：US20150191829A1

公开(公告)日：2015-07-09

申请号：US14591323

申请日：2015-01-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C23F1/02

CPC classification number: C23F1/02 ,  C08F297/02 ,  C09D153/00 ,  C23F1/12 ,  G03F7/0002 ,  H01L21/3081 ,  C08L83/04 ,  C08L25/08

Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

Abstract translation: 图案形成方法包括直接或间接地在基底上提供含金属的膜。 直接或间接地在含金属膜上提供定向自组装膜，从而形成定向自组装膜的多个相。 定向自组装膜的多个相的至少一部分被去除，从而形成定向自组装膜的图案。 使用定向自组装膜的图案作为掩模，依次蚀刻含金属膜和基板。