公开(公告)号：US20080180028A1

公开(公告)日：2008-07-31

申请号：US11733770

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01J7/00

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

摘要翻译： 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US20080182416A1

公开(公告)日：2008-07-31

申请号：US11733764

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

摘要： A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

摘要翻译： 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将各个VHF频率f 1和f 2的相应RF功率源耦合到（a）电极中的相应电极或（b）电极中的公共电极，其中f 1足够高以产生中心高 不均匀的等离子体离子分布和f 2足够低以产生中心 - 低不均匀等离子体离子分布。 该方法还包括调整f 1频率处的RF参数与f 2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

公开(公告)号：US20080178803A1

公开(公告)日：2008-07-31

申请号：US11733913

申请日：2007-04-11

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： B05C11/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935

摘要： A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.

摘要翻译： 等离子体反应器包括面对工件支撑基座的顶板电极和基座中的基座电极以及耦合到天花板电极和基座电极中相同或不同的不同频率的第一和第二VHF电源。 第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。 电抗器还包括被编程为将第一和第二VHF电源的相对输出功率电平改变为：（a）只要等离子体离子分布具有主要为边缘高的非高电平的第一VHF电源的相对输出功率电平， （b）当等离子体离子分布主要是中心高的不均匀性时，增加第二VHF电源的相对输出功率电平。

公开(公告)号：US20100018648A1

公开(公告)日：2010-01-28

申请号：US12178032

申请日：2008-07-23

申请人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

发明人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

IPC分类号： H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32623 ,  H01J2237/2001 ,  H01L21/6833

摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.

摘要翻译： 在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。 由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度 改变等离子体条件。

公开(公告)号：US07988815B2

公开(公告)日：2011-08-02

申请号：US11828568

申请日：2007-07-26

申请人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

发明人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

摘要： RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

摘要翻译： 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20130087286A1

公开(公告)日：2013-04-11

申请号：US13629267

申请日：2012-09-27

申请人： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

发明人： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC分类号： H05H1/46

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

摘要翻译： 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

申请人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

发明人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC分类号： H01L21/306

CPC分类号： H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

摘要： RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

摘要翻译： 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20090025879A1

公开(公告)日：2009-01-29

申请号：US11828713

申请日：2007-07-26

申请人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

发明人： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC分类号： H01L21/306

CPC分类号： H01J37/20 ,  H01J37/16 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32697 ,  H01J37/32834

摘要： RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

摘要翻译： RF接地回流电流通过提供旁路电流流动路径而被转移离开反应室的非对称特征。 旁路电流流动路径避免了室底部中的泵送口，避免了晶片狭缝阀，并且由接合到晶片基座并从晶片基座延伸的导电环形挡板提供。 可以通过在侧壁中提供一个或多个绝缘环或通过提供电介质侧壁来阻止低于环形挡板水平面的电流。

公开(公告)号：US08360003B2

公开(公告)日：2013-01-29

申请号：US12501966

申请日：2009-07-13

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

公开(公告)号：US20110005685A1

公开(公告)日：2011-01-13

申请号：US12501966

申请日：2009-07-13

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

IPC分类号： C23F1/08 ,  C23C16/503

CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。