公开(公告)号：US20160027605A1

公开(公告)日：2016-01-28

申请号：US14614088

申请日：2015-02-04

Applicant: KLA-Tencor Corporation

Inventor： Ximan Jiang ,  Stephen Biellak ,  John Fielden

IPC: H01J31/26 ,  G01N21/88 ,  H01J29/46

CPC classification number: H01J31/26 ,  G01N21/88 ,  H01J29/46

Abstract: An electron-bombarded detector for detecting low light signals includes a vacuum tube structure defining a cylindrical vacuum tube chamber, a photocathode disposed at a first end of the vacuum tube chamber, a sensor disposed at a second end of the vacuum tube chamber, ring electrodes disposed in the vacuum tube chamber for generating an electric field that accelerates emitted photoelectrons toward the sensor, and a magnetic field generator configured to generate a symmetric magnetic field that applies a focusing lens effect on the photoelectrons. The ring electrodes and magnetic field generator are operating using one of a reduced distance focusing approach and an acceleration/deceleration approach such that the photoelectrons have a landing energy below 2 keV. The use of reflective mode photocathodes is enabled using either multi-pole deflector coils, or ring electrodes formed by segmented circular electrode structures. Large angle deflections are achieved using magnetic or electrostatic deflectors.

Abstract translation: 用于检测低光信号的电子轰击检测器包括限定圆柱形真空管室的真空管结构，设置在真空管室的第一端的光电阴极，设置在真空管室的第二端的传感器，环形电极 设置在真空管室中，用于产生将发射的光电子朝向传感器加速的电场;以及磁场发生器，被配置为产生对光电子产生聚焦透镜效应的对称磁场。 环形电极和磁场发生器使用减小的距离聚焦方法和加速/减速方法之一进行操作，使得光电子具有低于2keV的着陆能量。 使用反射模式光电阴极可以使用多极偏转线圈或由分段圆形电极结构形成的环形电极。 使用磁性或静电偏转器实现大角度偏转。

公开(公告)号：US20150260659A1

公开(公告)日：2015-09-17

申请号：US14643148

申请日：2015-03-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: G01N21/95 ,  H01L27/146 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028 ,  G01N21/88 ,  H01L27/148

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract translation: 高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。 外延p和n型层生长在外延层的背面。 在n型外延层上沉积纯硼层。 在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。 可以将抗反射涂层施加到纯硼层。 在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。 接地的p阱可以根据需要从反向偏置的外延层保护有源电路。

公开(公告)号：US20150078650A1

公开(公告)日：2015-03-19

申请号：US14466688

申请日：2014-08-22

Applicant: KLA-Tencor Corporation

Inventor： Abdurrahman Sezginer ,  Patrick LoPresti ,  Joe Blecher ,  Rui-fang Shi ,  Yalin Xiong ,  John Fielden

IPC: G01N21/88 ,  G06T7/00 ,  G01N21/958

CPC classification number: G01N21/8851 ,  G01N21/8806 ,  G01N21/958 ,  G01N2021/8887 ,  G01N2201/125 ,  G06T7/001 ,  G06T2207/20224 ,  G06T2207/30148

Abstract: Block-to-block reticle inspection includes acquiring a swath image of a portion of a reticle with a reticle inspection sub-system, identifying a first occurrence of a block in the swatch image and at least a second occurrence of the block in the swath image substantially similar to the first occurrence of the block and determining at least one of a location, one or more geometrical characteristics of the block and a spatial offset between the first occurrence of the block and the at least a second occurrence of the block.

Abstract translation: 块对块掩模版检查包括用掩模版检查子系统获取掩模版的一部分的条带图像，识别样本图像中的块的第一次出现以及条纹图像中的块的至少第二次出现 基本上类似于块的第一次出现并且确定块的位置，一个或多个几何特征和块的第一次出现与块的至少第二次出现之间的空间偏移中的至少一个。

公开(公告)号：US20130282340A1

公开(公告)日：2013-10-24

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US20130264481A1

公开(公告)日：2013-10-10

申请号：US13792166

申请日：2013-03-10

Applicant: KLA-TENCOR CORPORATION

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: H01L31/0216 ,  G01N21/88

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

公开(公告)号：US11114489B2

公开(公告)日：2021-09-07

申请号：US16421212

申请日：2019-05-23

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden ,  David L. Brown ,  Masaharu Muramatsu ,  Yasuhito Yoneta ,  Shinya Otsuka

IPC: H01L27/146

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US10748730B2

公开(公告)日：2020-08-18

申请号：US15160505

申请日：2016-05-20

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  Yinying Xiao-Li ,  Xuefeng Liu

IPC: H01J1/308 ,  H01L31/105 ,  H01L31/107 ,  H01L27/148 ,  H01J1/304 ,  H01J1/34

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

公开(公告)号：US10466212B2

公开(公告)日：2019-11-05

申请号：US15667500

申请日：2017-08-02

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  G01N30/72 ,  H01J37/28 ,  H01L31/00 ,  G01T1/24 ,  G06F19/00 ,  H01J49/02 ,  H01L27/146

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

公开(公告)号：US10269842B2

公开(公告)日：2019-04-23

申请号：US15668776

申请日：2017-08-04

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chern ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US10121914B2

公开(公告)日：2018-11-06

申请号：US15797970

申请日：2017-10-30

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146 ,  H01L27/148

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.