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    Focus Metrology and Targets Which Utilize Transformations Based on Aerial Images of the Targets
    21.
    发明申请
    Focus Metrology and Targets Which Utilize Transformations Based on Aerial Images of the Targets 审中-公开

    公开(公告)号：US20170212427A1

    公开(公告)日：2017-07-27

    申请号：US15302052

    申请日：2016-08-04

    Applicant: KLA-Tencor Corporation

    Inventor： Nadav Gutman ,  Yoel Feler ,  Vladimir Levinski ,  Oded Kaminsky

    IPC: G03F7/20

    CPC classification number: G03F7/70641

    Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

    Method and system for providing a target design displaying high sensitivity to scanner focus change
    23.
    发明授权
    Method and system for providing a target design displaying high sensitivity to scanner focus change 有权
    用于提供对扫描仪焦点变化显示高灵敏度的目标设计的方法和系统

    公开(公告)号：US09454072B2

    公开(公告)日：2016-09-27

    申请号：US14074412

    申请日：2013-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel

    IPC: G06F17/50 ,  G03F1/38 ,  G01B11/14 ,  G03F7/20 ,  G03F1/70

    CPC classification number: G03F1/38 ,  G01B11/14 ,  G03F1/70 ,  G03F7/70641 ,  G03F7/70683

    Abstract: A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

    Abstract translation: 分割的掩模包括一组单元结构，其中每个单元结构包括沿着第一方向具有不可解析的分割间距的一组特征，其中沿着第一方向的不可解析的分割间距小于光刻印刷工具的照明，其中 所述多个单元结构具有沿着垂直于所述第一方向的第二方向的间距，其中所述不可分辨的分割间距适于产生用于将所述光刻工具的最佳聚焦位置移动所选量的印刷图案，以实现所选择的等级 聚焦灵敏度。

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    24.
    发明申请
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 有权
    使用散射测量方法的重点测量

    公开(公告)号：US20160103946A1

    公开(公告)日：2016-04-14

    申请号：US14974732

    申请日：2015-12-18

    Applicant: KLA-Tencor Corporation

    Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

    IPC: G06F17/50 ,  G01N21/47

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS
    27.
    发明申请
    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS 有权

    公开(公告)号：US20210149296A1

    公开(公告)日：2021-05-20

    申请号：US17161645

    申请日：2021-01-28

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Yoel Feler ,  Vladimir Levinski ,  Roel Gronheid ,  Sharon Aharon ,  Evgeni Gurevich ,  Anna Golotsvan ,  Mark Ghinovker

    IPC: G03F1/84 ,  G03F7/20 ,  G01N21/00 ,  G03F1/44 ,  G06F30/39 ,  G03F1/26

    Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

    Method and system for selection of metrology targets for use in focus and dose applications
    30.
    发明授权
    Method and system for selection of metrology targets for use in focus and dose applications 有权

    公开(公告)号：US10340196B1

    公开(公告)日：2019-07-02

    申请号：US14270991

    申请日：2014-05-06

    Applicant: KLA-Tencor Corporation

    Inventor： Roie Volkovich ,  Hiroyuki Kurita ,  Yoel Feler

    IPC: H01L21/66

    Abstract: The selection of metrology targets for use in a focus and dose application includes providing a FEM wafer including a plurality of fields with one or more metrology targets, measuring the one or more metrology targets within each field of the FEM wafer, performing a regression process on measurement results from the one or more selected fields of the FEM wafer to determine one or more DOI values for the one or more metrology targets of the one or more selected fields, calculating one or more diagnostic parameters for the one or more metrology targets of the one or more selected fields based on the regression process performed on the one or more selected fields of the FEM wafer, and identifying a set of candidate metrology targets based on the one or more calculated diagnostic parameters of the one or more selected fields of the FEM wafer.

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