公开(公告)号：US5955213A

公开(公告)日：1999-09-21

申请号：US524809

申请日：1995-09-07

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： C30B29/22 ,  C23C14/00 ,  C23C14/02 ,  C23C14/08 ,  C30B23/02 ,  H01G4/33 ,  H01L21/283 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  B32B17/00

CPC分类号： C23C14/08 ,  C23C14/0021 ,  C23C14/024 ,  C30B23/02 ,  C30B29/22

摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

摘要翻译： 在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是 形成，优选地具有外延氧化膜或导电外延膜之间。 适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

公开(公告)号：US20100244632A1

公开(公告)日：2010-09-30

申请号：US12659997

申请日：2010-03-26

申请人： Kazuya Maekawa ,  Takao Noguchi ,  Kenichi Tochi ,  Ken Unno

发明人： Kazuya Maekawa ,  Takao Noguchi ,  Kenichi Tochi ,  Ken Unno

IPC分类号： H01L41/04

CPC分类号： G01C19/5607 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element having a crystal structure that enables a piezoelectric film to be formed in an unstressed state is provided. The piezoelectric film contains an a-axis oriented crystal and a c-axis oriented crystal, where a difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å. The present inventors have newly found that a stress accumulated in the piezoelectric film can be reduced while maintaining favorable piezoelectric properties when a condition that the difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å is satisfied. When the condition is satisfied, the c-axis oriented crystal and the a-axis oriented crystal are properly balanced and as a result crystal particles of the piezoelectric film are closest-packed on its base in an ideal state, which contributes to a reduced stress.

摘要翻译： 提供了具有能够使压电膜形成为无应力状态的晶体结构的压电元件。 压电膜包含a轴取向晶体和c轴取向晶体，其中a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06。 本发明人新发现，当a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06的条件时，可以在保持良好的压电特性的同时，减小在压电膜中累积的应力 Å满意 当满足条件时，c轴取向晶体和a轴取向晶体被适当地平衡，结果在理想状态下，压电膜的晶体颗粒在其基极上最紧密堆积，这有助于减小应力 。

公开(公告)号：US07714486B2

公开(公告)日：2010-05-11

申请号：US12078050

申请日：2008-03-26

申请人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

发明人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

IPC分类号： H01L41/08

CPC分类号： G01C19/5628 ,  B81B2201/025 ,  B81C1/0023 ,  G01C25/00 ,  H01L41/1132

摘要： The present invention provides an angular velocity sensor in which higher sensitivity for sensors is available even with a smaller base portion. The angular velocity sensor includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm.

摘要翻译： 本发明提供了一种角速度传感器，其中传感器的更高的灵敏度即使在较小的基部也可获得。 角速度传感器包括固定到壳体的传感器元件支撑部分的上表面的固定部分，上检测臂和下检测臂，它们各自连接到彼此相对的侧面上的固定部分，并且延伸 沿着平行于传感器元件支撑部分的顶表面的平面，以及一对上部振动臂，其以固定部分的方式连接，以便形成一对臂，其中上部检测臂在其中并且在方向 平行于上检测臂的延伸方向。

公开(公告)号：US07042090B2

公开(公告)日：2006-05-09

申请号：US10786776

申请日：2004-02-24

申请人： Takao Noguchi ,  Hisatoshi Saito

发明人： Takao Noguchi ,  Hisatoshi Saito

IPC分类号： H01L23/48

CPC分类号： H03H9/02094 ,  H01L29/152 ,  H01L29/2003 ,  H01L2924/0002 ,  H03H3/02 ,  H03H9/174 ,  H03H9/175 ,  H01L2924/00

摘要： An electronic device includes a substrate, a lower conductive film formed on the substrate and a functional film formed on the lower conductive film. In the present invention, an adhesion of the lower conductive film on the side of the substrate is greater than or equal to 0.1 N/cm. The electronic device according to this invention exhibits high mechanical strength that makes it very reliable. This is because the invention prevents the physical exfoliation of the lower conductive film that is apt to occur during or after fabrication of the electronic device when the adhesion of the lower conductive film is lower than 0.1 N/cm.

摘要翻译： 电子设备包括基板，形成在基板上的下导电膜和形成在下导电膜上的功能膜。 在本发明中，下导电膜在基板一侧的粘合力大于或等于0.1N / cm。 根据本发明的电子设备表现出高机械强度，使其非常可靠。 这是因为，当下导电膜的粘合力低于0.1N / cm时，本发明防止在电子器件制造期间或之后容易发生的下导电膜的物理剥离。

公开(公告)号：US20050191792A1

公开(公告)日：2005-09-01

申请号：US11028891

申请日：2005-01-03

申请人： Takao Noguchi ,  Hisatoshi Saito

发明人： Takao Noguchi ,  Hisatoshi Saito

IPC分类号： H01L41/09 ,  H01L21/02 ,  H01L21/50 ,  H01L23/02 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/22 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17

CPC分类号： H03H9/175 ,  H01L41/0477 ,  H01L41/316 ,  H03H3/02 ,  H03H9/02094

摘要： A component for fabricating the electronic device comprises a substrate and a conductive film provided on the substrate, in which the adhesion of the conductive film to the substrate is not greater than 0.1 N/cm. The adhesion of the conductive film to the substrate is weak enough to enable the conductive film to be readily peeled from the substrate. This makes it possible to form a component on a substrate other than the substrate used during film formation, thereby greatly increasing the degree of product configuration freedom. If the adhesion of a lower conductive film on the substrate side is made to be not greater than 0.04 N/cm, it becomes very easy to peel the conductive film from the substrate.

摘要翻译： 用于制造电子器件的部件包括衬底和设置在衬底上的导电膜，其中导电膜与衬底的粘合力不大于0.1N / cm。 导电膜对基片的粘合力足够弱以使导电膜容易从基片上剥离。 这使得可以在成膜之前使用的基板以外的基板上形成部件，从而大大提高产品配置自由度。 如果将基板侧的下导电膜的粘合度设定为不大于0.04N / cm，则很容易从基板剥离导电膜。

公开(公告)号：US06709776B2

公开(公告)日：2004-03-23

申请号：US09842805

申请日：2001-04-27

申请人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： B32B900

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

摘要翻译： 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

公开(公告)号：US06387712B1

公开(公告)日：2002-05-14

申请号：US09453505

申请日：1999-12-03

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： H01L2100

CPC分类号： C23C14/08 ,  C23C14/0026 ,  H01L21/31691 ,  H01L29/516 ,  Y10S438/909

摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

摘要翻译： 在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8 <=（Pb + Rn）/ 2的稀土元素（Rn），Pb，Ti和O。 Ti <= 1.3和0.5 <= Pb /（Pb + Rn）<= 0.99，具有钙钛矿型晶体结构，为（001）单向取向或（001）取向和（100）取向的混合物。 铁电薄膜可以形成在硅（100）衬底上，通常通过在真空室中蒸发氧化铅和TiO x，同时在其中引入氧化气体。

公开(公告)号：US06198208B1

公开(公告)日：2001-03-06

申请号：US09558586

申请日：2000-04-26

申请人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

发明人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

IPC分类号： H01L4104

CPC分类号： H03H9/176 ,  H01L41/1876 ,  H01L41/316 ,  H03H3/04 ,  H03H9/0211 ,  H03H9/174 ,  Y10T428/3171

摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

摘要翻译： 薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。 实现了具有极宽带的薄膜体声波谐振器。

公开(公告)号：US6096434A

公开(公告)日：2000-08-01

申请号：US44227

申请日：1998-03-19

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： H01L21/28 ,  C30B23/02 ,  C30B29/22 ,  G01Q60/38 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/14 ,  H01G7/06 ,  H01L21/02 ,  H01L21/203 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/14 ,  H01L29/788 ,  H01L29/792 ,  H01L37/02 ,  H01L41/083 ,  H01L41/09 ,  B32B9/04

CPC分类号： H01L21/31691 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22 ,  H01L28/56

摘要： A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.

摘要翻译： 膜结构包括在其表面具有硅（100）面的基板上形成的导电氧化物薄膜。 导电氧化物薄膜是主要由钌酸锶构成的外延膜。 至少80％的导电氧化物薄膜的表面具有高达10nm的Rz。 在具有优异的表面平坦度和结晶度的导电氧化物薄膜上，可以形成具有表面平坦度和自发极化的通常为锆钛酸铅的铁电薄膜。

公开(公告)号：US6045626A

公开(公告)日：2000-04-04

申请号：US102568

申请日：1998-06-23

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/365 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/34 ,  H01L39/24

CPC分类号： H01L33/007 ,  H01L41/0815 ,  H01L41/316 ,  H01L41/319 ,  H01L39/2461

摘要： A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.

摘要翻译： 衬底结构包括单晶Si衬底和表面层，其间具有交错的缓冲层。 缓冲层包括主要由稀土氧化物和/或氧化锆组成的R-Zr族氧化物薄膜中的至少一种，主要由稀土元素A，Mn和O组成的具有六方晶YMnO 3型的AMnO 3薄膜 主要由Al和O组成的AlOx薄膜和主要由氮化钛，氮化铌，氮化钽或氮化锆组成的NaCl型氮化物薄膜。 表面层是含有纤锌矿型氧化物和/或氮化物的外延膜。 表面层可以用作诸如半导体膜或其下面的膜的功能膜，并且衬底结构对于电子器件的制造是有用的。