公开(公告)号：US07364982B2

公开(公告)日：2008-04-29

申请号：US11621638

申请日：2007-01-10

申请人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

发明人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

IPC分类号： H01L21/30

CPC分类号： H01L33/0079 ,  H01L21/187 ,  H01L24/05 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2924/00

摘要： The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45

摘要翻译： 该方法包括生长由组成式为X 1（Ga 1-y Al y）的化合物半导体的外延混合晶体的步骤， 在GaAs衬底12上形成具有n型包层14（0.45

公开(公告)号：US07217635B2

公开(公告)日：2007-05-15

申请号：US10961066

申请日：2004-10-12

申请人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

发明人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

IPC分类号： H01L21/30

CPC分类号： H01L33/0079 ,  H01L21/187 ,  H01L24/05 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2924/00

摘要： The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1−yAly)1−xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45

摘要翻译： 该方法包括生长由组成式为X 1（Ga 1-y Al y）的化合物半导体的外延混合晶体的步骤， 在GaAs衬底12上形成具有n型包层14（0.45

公开(公告)号：US07148521B2

公开(公告)日：2006-12-12

申请号：US11047666

申请日：2005-02-02

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuyoshi Furukawa

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuyoshi Furukawa

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/46

摘要： A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

摘要翻译： 一种半导体发光器件包括：具有第一和第二主表面的衬底; 设置在所述基板的所述第一主表面上的第一部分中的发光层; 设置在所述发光层上方的第一电极; 设置在所述基板的所述第一主表面上的第二部分中的第二电极，所述第二部分不同于所述第一部分; 以及设置在所述基板的所述第二主表面上的突起，所述突起具有反映所述发光层的发光区域的平面形状的平面形状，所述发光区域夹在所述第一电极和所述第二电极之间， 面对突起。

公开(公告)号：US5922126A

公开(公告)日：1999-07-13

申请号：US866259

申请日：1997-05-30

申请人： Kazuyoshi Furukawa ,  Masami Iwamoto

发明人： Kazuyoshi Furukawa ,  Masami Iwamoto

IPC分类号： C30B19/06

CPC分类号： C30B19/068 ,  C30B19/06

摘要： The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness, the thermal deterioration of the substrate, etc. The wafer holder comprises a holder body (11) formed with at least one wafer accommodating space in which at least two semiconductor wafers (15) can be held in such a way that reverse surfaces of the two wafers are brought into contact with two opposing inner side walls of the wafer holder and right surfaces of the two wafers are opposed to each other with a predetermined space between the two; and a holder cover (12) for covering an open surface of the holder body (11). Further, the holder body (11) is formed with an inlet port (16) for injecting a source into the wafer accommodating space and an outlet port (13) for exhausting the source from the wafer accommodating space.

摘要翻译： 所公开的半导体液相外延生长方法和装置以及用于其的晶片保持架可以改善多晶体的沉积，膜厚度的不均匀性，基板的热劣化等。晶片保持器包括保持器主体（11） 形成有至少一个晶片容纳空间，其中至少两个半导体晶片（15）可以被保持为使得两个晶片的反面与晶片保持器的两个相对的内侧壁接触，并且右表面 两个晶片在两者之间具有预定的空间彼此相对; 以及用于覆盖保持器主体（11）的开放表面的保持器盖（12）。 此外，保持体（11）形成有用于将源注入晶片容纳空间的入口（16）和用于从晶片容纳空间排出源的出口（13）。

公开(公告)号：US5097314A

公开(公告)日：1992-03-17

申请号：US732575

申请日：1991-07-18

申请人： Akio Nakagawa ,  Kazuyoshi Furukawa ,  Tsuneo Ogura ,  Katsujiro Tanzawa

发明人： Akio Nakagawa ,  Kazuyoshi Furukawa ,  Tsuneo Ogura ,  Katsujiro Tanzawa

IPC分类号： H01L21/761 ,  H01L21/762 ,  H01L21/763 ,  H01L27/088 ,  H01L27/12 ,  H01L29/739 ,  H01L27/02 ,  H01L27/04

CPC分类号： H01L21/76264 ,  H01L21/761 ,  H01L21/76297 ,  H01L21/763 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/7394 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76286

摘要： A dielectrically isolated substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semicondcutor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectrically isolated substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.

公开(公告)号：US08426878B2

公开(公告)日：2013-04-23

申请号：US13531806

申请日：2012-06-25

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

公开(公告)号：US08367523B2

公开(公告)日：2013-02-05

申请号：US12726452

申请日：2010-03-18

申请人： Yoshiaki Sugizaki ,  Akihiro Kojima ,  Masanobu Ando ,  Kazuyoshi Furukawa

发明人： Yoshiaki Sugizaki ,  Akihiro Kojima ,  Masanobu Ando ,  Kazuyoshi Furukawa

IPC分类号： H01L21/46 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.

摘要翻译： 本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对 形成第二互连层的支撑基板的表面，并且在照射接合芯片和临时基板之间的界面照射之后，将多个粘合芯片从临时基板共同转印到支撑基板，并将芯片和临时基板彼此分离 。

公开(公告)号：US20120261707A1

公开(公告)日：2012-10-18

申请号：US13531806

申请日：2012-06-25

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

公开(公告)号：US20100232601A1

公开(公告)日：2010-09-16

申请号：US12688033

申请日：2010-01-15

申请人： Kouichi ITOH ,  Dai Yamamoto ,  Tetsuya Izu ,  Masahiko Takenaka ,  Kazuyoshi Furukawa

发明人： Kouichi ITOH ,  Dai Yamamoto ,  Tetsuya Izu ,  Masahiko Takenaka ,  Kazuyoshi Furukawa

IPC分类号： H04L9/28

CPC分类号： G06F7/725 ,  G06F2207/7271

摘要： An apparatus for executing cryptographic calculation on the basis of an elliptic point on an elliptic curve includes: a memory for storing a first value including a plurality of digits; and a processor for executing a process including: obtaining a second value representing a point on the elliptic curve; calculating output values by using a predetermined equation, each digit of the first value, and the second value; determining whether at least one of the second value and the output values indicates a point of infinity; terminating the calculation when at least one of the second value and the output values indicates the point at infinity; and completing calculation when both the second value and the output values do not indicate the point at infinity, so as to obtain a result of the cryptographic calculation.

摘要翻译： 一种用于基于椭圆曲线上的椭圆点执行加密计算的装置包括：存储器，用于存储包括多个数字的第一值; 以及用于执行处理的处理器，包括：获得表示所述椭圆曲线上的点的第二值; 通过使用预定方程，第一值的每个数字和第二值来计算输出值; 确定所述第二值和所述输出值中的至少一个是否指示无限点; 当所述第二值和所述输出值中的至少一个指示所述无限远点时终止所述计算; 并且当第二值和输出值都不表示无限远点时完成计算，以获得加密计算的结果。

公开(公告)号：US20100041209A1

公开(公告)日：2010-02-18

申请号：US12539336

申请日：2009-08-11

申请人： Kazuyoshi Furukawa

发明人： Kazuyoshi Furukawa

IPC分类号： H01L21/18

CPC分类号： H01L21/187 ,  H01L33/0079

摘要： A method for manufacturing a semiconductor device, includes: bringing a first major surface of a first substrate into close contact with a second major surface of a second substrate being different in thermal expansion coefficient from the first substrate at a first temperature higher than room temperature; and bonding the first substrate and the second substrate by heating the first substrate and the second substrate to a second temperature higher than the first temperature with the first major surface being in close contact with the second major surface.

摘要翻译： 一种制造半导体器件的方法，包括：在高于室温的第一温度下，将第一衬底的第一主表面与第二衬底的第二主表面紧密接触，第二衬底的热膨胀系数与第一衬底不同; 以及通过将所述第一基板和所述第二基板加热到高于所述第一温度的第二温度并且所述第一主表面与所述第二主表面紧密接触来将所述第一基板和所述第二基板接合。