利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.016 秒)

    Semiconductor light-emitting device
    23.
    发明申请
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US20050247949A1

    公开(公告)日：2005-11-10

    申请号：US10515655

    申请日：2003-04-18

    申请人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

    发明人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

    IPC分类号： H01L33/44 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L29/22

    CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/44

    摘要： An insulation film 150 made of SiO2 is formed on a p-layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

    摘要翻译： 在p层106上形成由SiO 2构成的绝缘膜150，在绝缘膜150上形成作为通过金属沉积形成的金属膜的多层厚膜正极120 并且在其中心部分具有窗口并被暴露的p型层106上。 绝缘膜150具有发射波长的四分之一倍的厚度。 绝缘膜150的厚度通常通过将四分之一的内部发射波长乘以奇数来确定。 通过干涉效应，可以提高辐射光沿光轴方向的方向性。

    Semiconductor light-emitting device
    24.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07042012B2

    公开(公告)日：2006-05-09

    申请号：US10515655

    申请日：2003-04-18

    申请人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

    发明人： Masanobu Senda ,  Mitsuhiro Inoue ,  Jun Ito ,  Toshimasa Hayashi ,  Kazuki Nishijima ,  Naoki Shibata

    IPC分类号： H01L27/15

    CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/44

    摘要： An insulation film 150 made of SiO2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

    摘要翻译： 在p型层106上形成由SiO 2构成的绝缘膜150，并且在绝缘膜上形成作为通过金属沉积形成的金属膜的多重厚膜正极120 并且在其中心部分具有窗口并露出的p型层106上。 绝缘膜150具有发射波长的四分之一倍的厚度。 绝缘膜150的厚度通常通过将四分之一的内部发射波长乘以奇数来确定。 通过干涉效应，可以提高辐射光沿光轴方向的方向性。

    Process for producing group III nitride compound semiconductor
    25.
    发明授权
    Process for producing group III nitride compound semiconductor 有权
    制备III族氮化物化合物半导体的方法

    公开(公告)号：US07128846B2

    公开(公告)日：2006-10-31

    申请号：US10505948

    申请日：2003-02-24

    申请人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

    发明人： Kazuki Nishijima ,  Masanobu Senda ,  Toshiaki Chiyo ,  Jun Ito ,  Naoki Shibata ,  Toshimasa Hayashi

    IPC分类号： C23F1/00 ,  C30B29/38

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647

    摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

    摘要翻译： 一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层 将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

    Lamp
    27.
    发明申请
    Lamp 失效
    灯

    公开(公告)号：US20060101757A1

    公开(公告)日：2006-05-18

    申请号：US11239470

    申请日：2005-09-30

    申请人： Atsushi Tsuzuki ,  Yuji Takahashi ,  Toshimasa Hayashi ,  Katsunori Arakane

    发明人： Atsushi Tsuzuki ,  Yuji Takahashi ,  Toshimasa Hayashi ,  Katsunori Arakane

    IPC分类号： E04B1/74

    CPC分类号： H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  Y10S362/80 ,  H01L2924/00014

    摘要： The present invention provides a lamp that includes a reflection case and a light emitting element. A central portion of a lower wall inner face of the reflection case is stepwise lowered to form a lower wall enlarged inner face, and both faces are made continuous with each other through right and left perpendicular hanging inner faces, so that a central portion of a back wall inner face and a front opening are downwardly enlarged in a rectangular shape, respectively. The light emitting element is mounted on a front face of a sub mount table. A back face of the sub mount table is fixed to the central portion of the back wall inner face, and right and left end faces of the sub mount table are positioned to right and left perpendicular hanging inner faces when the sub mount table is fixed.

    摘要翻译： 本发明提供了一种包括反射壳和发光元件的灯。 反射壳体的下壁内表面的中心部分逐步降低以形成下壁扩大的内表面，并且两个面通过左右垂直悬挂的内表面彼此连续地形成，使得一个中心部分 后壁内表面和前开口分别向下扩大为矩形。 发光元件安装在副安装台的正面上。 副安装台的背面固定在后壁内表面的中央部分，并且在安装副安装台时，副安装台的右侧和左侧端面位于左右垂直悬挂的内表面。