公开(公告)号：US09418859B2

公开(公告)日：2016-08-16

申请号：US14676711

申请日：2015-04-01

Applicant: Lam Research Corporation

Inventor： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

IPC: H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

公开(公告)号：US20160233058A1

公开(公告)日：2016-08-11

申请号：US15133049

申请日：2016-04-19

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J37/32

CPC classification number: H01J37/32183

Abstract: A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

公开(公告)号：US09396910B2

公开(公告)日：2016-07-19

申请号：US14947240

申请日：2015-11-20

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Ryan Bise

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01J37/32541 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A heat transfer plate useful in a showerhead electrode assembly of a capacitively coupled plasma processing apparatus. The heat transfer plate includes independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.

Abstract translation: 一种用于电容耦合等离子体处理装置的喷头电极组件中的传热板。 传热板包括可独立控制的气体体积，其可以被加压以局部地控制加热器构件和冷却构件之间的热传导，使得可以在喷头电极组件的等离子体暴露表面上建立均匀的温度。

公开(公告)号：US09337000B2

公开(公告)日：2016-05-10

申请号：US14043525

申请日：2013-10-01

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32183

Abstract: A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

Abstract translation: 用于控制射频（RF）返回路径的阻抗的系统包括还包括匹配电路的火柴盒。 该系统还包括耦合到火柴盒的RF发生器，以经由RF供应路径的第一部分向火柴盒提供RF供应信号。 RF发生器耦合到火柴盒，以经由RF返回路径的第一部分接收RF返回信号。 该系统还包括经由RF返回路径的第二部分耦合到开关电路的开关电路和等离子体电抗器。 等离子体反应器经由RF供应路径的第二部分耦合到匹配电路。 该系统包括耦合到开关电路的控制器，该控制器被配置为基于调谐配方来控制开关电路以改变RF返回路径的阻抗。

公开(公告)号：US09330927B2

公开(公告)日：2016-05-03

申请号：US14012802

申请日：2013-08-28

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 电导控制结构可移动地设置在靠近所述至少一个出口端口并且能够限制通过所述至少一个出口端口的出口流到第一流量并且能够将通过所述至少一个出口端口的出口流增加到 第二流量，其中电导控制结构限制出口流量在等离子体处理期间由与控制器设定的选定处理状态对应的第一流量与第二流量之间移动。

公开(公告)号：US20160079039A1

公开(公告)日：2016-03-17

申请号：US14937477

申请日：2015-11-10

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Andrew D. Bailey III

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract translation: 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：US20150325414A1

公开(公告)日：2015-11-12

申请号：US14802972

申请日：2015-07-17

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Rajaramanan Kalyanaraman ,  Sathyanarayanan Mani ,  Gautam Bhattacharyya

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J2237/334

Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 所述装置还包括至少一个柱塞，所述至少一个柱塞构造成用于沿垂直方向移动所述单位化限制环装置，以调节第一气体传导路径和第二气体导电路径中的至少一个，以执行所述压力控制，其中所述第一气体导电路径 形成在上部电极和单元化的限制环装置之间，并且第二气体导电路径形成在下部电极和单个组合环形装置之间。

公开(公告)号：US09064909B2

公开(公告)日：2015-06-23

申请号：US13919635

申请日：2013-06-17

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa

IPC: H05K3/20 ,  H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/509

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32605 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49401 ,  Y10T29/49428 ,  Y10T29/49769 ,  Y10T29/49895 ,  Y10T29/49959 ,  Y10T156/10

Abstract: A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.

Abstract translation: 用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。 界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。 界面凝胶包括例如填充有氧化铝微球的硅氧烷基复合材料。 界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。 界面凝胶可以预先施加到可消耗的上电极上。

公开(公告)号：US09018022B2

公开(公告)日：2015-04-28

申请号：US13625555

申请日：2012-09-24

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Ryan Bise

IPC: H01L21/00 ,  H01J37/32

CPC classification number: H01J37/32541 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.

Abstract translation: 一种用于电容耦合等离子体处理装置的喷头电极组件，包括传热板。 传热板具有可独立控制的气体体积，其可以被加压以局部地控制加热器构件和冷却构件之间的热传导，使得可以在喷头电极组件的等离子体暴露表面上建立均匀的温度。

公开(公告)号：US20150083582A1

公开(公告)日：2015-03-26

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

Abstract translation: 所公开的技术涉及用于蚀刻衬底的方法和设备。 板组件将反应室分成下部和上部副室。 板组件包括具有穿过其中的孔的上板和下板。 当上板和下板中的孔对齐时，离子和中性物质可以穿过板组件进入下子室。 当孔不对齐时，防止离子通过组件，而中性物质受影响较小。 因此，可以通过控制孔对准的面积的量来调节离子通量：中性流量的比率。 在某些实施例中，板组件的一个板被实现为一系列同心的，可独立移动的喷射控制环。 此外，在一些实施例中，上部子室被实现为由绝缘材料的壁隔开的一系列同心等离子体区域。