公开(公告)号：US20160365484A1

公开(公告)日：2016-12-15

申请号：US15244724

申请日：2016-08-23

Applicant: LG INNOTEK CO., LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Kwang Ki CHOI

IPC: H01L33/22 ,  H01L33/40 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。

公开(公告)号：US20150021647A1

公开(公告)日：2015-01-22

申请号：US14509880

申请日：2014-10-08

Applicant: LG INNOTEK CO., LTD.

Inventor： June O SONG

IPC: H01L33/00 ,  H01L33/38 ,  H01L23/60 ,  H01L33/60

CPC classification number: H01L33/0033 ,  H01L23/60 ,  H01L27/15 ,  H01L33/385 ,  H01L33/405 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulating layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.

Abstract translation: 根据实施例的发光器件包括第一导电半导体层; 在第一导电半导体层上方的有源层; 在有源层上的第二导电半导体层; 在第二导电半导体层上的结合层; 结合层上的肖特基二极管层; 用于部分地暴露所述接合层，所述肖特基二极管层和所述第一导电半导体层的绝缘层; 与第一导电半导体层和肖特基二极管层电连接的第一电极层; 以及与所述接合层电连接的第二电极层。

公开(公告)号：US20210184090A1

公开(公告)日：2021-06-17

申请号：US16769900

申请日：2018-11-30

Applicant: LG INNOTEK CO., LTD.

Inventor： Won Jung KIM ,  June O SONG ,  Chang Man LIM ,  Ki Seok KIM

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/48 ,  H01L33/60

Abstract: The light emitting device package disclosed in the embodiment includes a first frame having a first through hole; a second frame having a second through hole; a body disposed between the first and second frames; and light emitting devices disposed on the first and second frames, wherein the first and second through holes have an area of a lower surface larger than an area of the upper surface, and centers of the upper and lower surfaces of the first through hole may be offset from each other in the vertical direction, and centers of the upper and lower surfaces of the second through hole may be offset from each other in the vertical direction.

公开(公告)号：US20190334063A1

公开(公告)日：2019-10-31

申请号：US16070484

申请日：2017-09-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Ki Seok KIM ,  Won Jung KIM ,  June O SONG ,  Chang Man LIM

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/62 ,  H01L33/56

Abstract: A light emitting device package is discussed. The light emitting device package includes a first frame having a first through hole; a second frame having a second through hole; a connecting frame diagonally extending in the light emitting device package from the first frame to the second frame; a first light emitting device including a first electrode pad and a second electrode pad, the second electrode pad being disposed on the first through hole of the first frame; and a second light emitting device including a third electrode pad and a fourth electrode pad, the third electrode pad being disposed on the second through hole of the second frame.

公开(公告)号：US20190207062A1

公开(公告)日：2019-07-04

申请号：US16238046

申请日：2019-01-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Won Jung KIM ,  June O SONG ,  Ki Seok KIM ,  Chang Man LIM

IPC: H01L33/48 ,  H01L33/56 ,  H01L33/62 ,  H01L33/60

Abstract: A light emitting device package according to an embodiment includes: a body including an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and first and second openings passing through the upper surface and the lower surface; and a light emitting device including first and second bonding portions disposed on the first and second openings, respectively, wherein the body may include a recess provided on the lower surface, the recess may be vertically overlapped with the first opening and the second opening, and the recess may be exposed at the side surface of the body.

公开(公告)号：US20190131494A1

公开(公告)日：2019-05-02

申请号：US16090051

申请日：2017-03-28

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  June O SONG

IPC: H01L33/38 ,  G09G3/22 ,  G09G3/3266 ,  G09G3/3258 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

公开(公告)号：US20190044039A1

公开(公告)日：2019-02-07

申请号：US16052247

申请日：2018-08-01

Applicant: LG INNOTEK CO., LTD.

Inventor： Tae Sung LEE ,  Won Jung KIM ,  June O SONG ,  Chang Man LIM

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/32 ,  H01L33/60 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L33/32 ,  H01L33/36 ,  H01L33/486 ,  H01L33/50 ,  H01L33/60 ,  H01L33/64

Abstract: A light emitting device package according to an embodiment includes: a package body; a light emitting device disposed on the package body; and an adhesive disposed between the package body and the light emitting device. The package body includes first and second openings passing through the package body on an upper surface of the package body and a recess provided to concave in a direction of a lower surface of the package body from the upper surface of the package body. The light emitting device includes a first bonding part disposed on the first opening and a second bonding part disposed on the second opening. The adhesive is provided at the recess.

公开(公告)号：US20170162753A1

公开(公告)日：2017-06-08

申请号：US15433167

申请日：2017-02-15

Applicant: LG INNOTEK CO. LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US20150325750A1

公开(公告)日：2015-11-12

申请号：US14797262

申请日：2015-07-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC: H01L33/40 ,  H01L33/14 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括发光结构，电极，欧姆层，电极层，粘合层和沟道层。 发光结构可以包括化合物半导体层。 电极可以设置在发光结构上。 欧姆层可以设置在发光结构之下。 电极层可以包括在欧姆层之下的反射金属。 粘合层可以设置在电极层的下方。 沟道层可以沿着发光结构的底部边缘设置。

公开(公告)号：US20140159095A1

公开(公告)日：2014-06-12

申请号：US14179420

申请日：2014-02-12

Applicant: LG INNOTEK CO., LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Kwang Ki CHOI

IPC: H01L33/36 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。