公开(公告)号：US09859145B2

公开(公告)日：2018-01-02

申请号：US13943908

申请日：2013-07-17

申请人： Lam Research Corporation

发明人： Andreas Fischer ,  Dean Larson

IPC分类号： H01L21/00 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/68742 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109

摘要： A semiconductor substrate processing apparatus includes a cooled pin lifter paddle for raising and lowering a semiconductor substrate. The semiconductor substrate processing apparatus comprises a processing chamber in which the semiconductor substrate is processed, a heated pedestal for supporting the semiconductor substrate in the processing chamber, and the cooled pin lifter paddle located below the pedestal. The cooled pin lifter paddle includes a heat shield and at least one flow passage in an outer peripheral portion thereof through which a coolant can be circulated to remove heat absorbed by the heat shield of the cooled pin lifter paddle. The cooled pin lifter paddle is vertically movable such that lift pins on an upper surface of the heat shield travel through corresponding holes in the pedestal and a source of coolant is in flow communication with the at least one flow passage.

公开(公告)号：US20160135274A1

公开(公告)日：2016-05-12

申请号：US14539121

申请日：2014-11-12

申请人： Lam Research Corporation

发明人： Andreas Fischer ,  Thorsten Lill

IPC分类号： H05G2/00 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26 ,  H05G2/003

摘要： Disclosed are methods of adjusting the emission of vacuum ultraviolet (VUV) radiation from a plasma in a semiconductor processing chamber. The methods may include generating a plasma in the processing chamber which includes a VUV-emitter gas and a collisional energy absorber gas, and adjusting the emission of VUV radiation from the plasma by altering the concentration ratio of the VUV-emitter gas to collisional energy absorber gas in the plasma. In some embodiments, the VUV-emitter gas may be helium and the collisional energy absorber gas may be neon, and in certain such embodiments, adjusting VUV emission may include flowing helium and/or neon into the processing chamber in a proportion so as to alter the concentration ratio of helium to neon in the plasma. Also disclosed are apparatuses which implement the foregoing methods.

摘要翻译： 公开了在半导体处理室中调整来自等离子体的真空紫外线（VUV）辐射的发射的方法。 所述方法可以包括在处理室中产生等离子体，其包括VUV发射极气体和碰撞能量吸收器气体，并且通过改变VUV发射极气体与碰撞能量吸收器的浓度比来调节来自等离子体的VUV辐射的发射 等离子体中的气体 在一些实施例中，VUV发射体气体可以是氦气，并且碰撞能量吸收器气体可以是氖的，并且在某些这样的实施例中，调节VUV发射可以包括以一定比例将氦和/或氖流入处理室，以便改变 氦与氖在等离子体中的浓度比。 还公开了实现上述方法的装置。

公开(公告)号：US09293926B2

公开(公告)日：2016-03-22

申请号：US13689679

申请日：2012-11-29

申请人： LAM RESEARCH CORPORATION

发明人： Andreas Fischer ,  Dave Jacob

IPC分类号： H01L21/683 ,  H02J4/00 ,  B44C1/22 ,  H01J37/32

CPC分类号： H02J4/00 ,  B44C1/227 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/3255

摘要： Methods and apparatus for plasma processing of a substrate to improve process results are proposed. The apparatus pertains to multi-layer segmented electrodes and methods to form and operate such electrodes. The multi-layer segmented electrode includes a first layer comprising a first plurality of electrode segments, whereby electrode segments of the first plurality of electrode segments spatially separated from one another along a first direction. There is also included a second layer comprising a second plurality of electrode segments, whereby the second layer is spatially separated from the first layer along a second direction perpendicular to the first direction and whereby at least two segmented electrodes of the first plurality of electrode segments are individually controllable with respect to one or more electrical parameters.

摘要翻译： 提出了用于衬底等离子体处理以改进工艺结果的方法和装置。 该装置涉及多层分段电极以及形成和操作这种电极的方法。 所述多层分段电极包括包含第一多个电极段的第一层，由此所述第一多个电极段中的电极段沿第一方向彼此空间分离。 还包括包括第二多个电极段的第二层，其中第二层沿垂直于第一方向的第二方向与第一层在空间上分离，并且由此第一多个电极段中的至少两个分段的电极是 可以相对于一个或多个电参数单独控制。

公开(公告)号：US11637022B2

公开(公告)日：2023-04-25

申请号：US17250326

申请日：2019-07-03

申请人： Lam Research Corporation

发明人： Ivan L. Berry, III ,  Thorsten Lill ,  Andreas Fischer

IPC分类号： H01L21/321 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

摘要： Disclosed are apparatuses and methods for performing atomic layer etching. A method may include modifying one or more surface layers of material on the substrate and exposing the one or more modified surface layers on the substrate to an electron source thereby removing, without using a plasma, the one or more modified surface layers on the substrate. An apparatus may include a processing chamber, a process gas unit, an electron source, and a controller with instructions configured to cause the process gas unit to flow a first process gas to a substrate in a chamber interior, the first process gas is configured to modify one or more layers of material on the substrate, and to cause the electron source to generate electrons and expose the one or more modified surface layers on the substrate to the electrons, the one or more modified surface layers being removed, without using a plasma.

公开(公告)号：US20210104414A1

公开(公告)日：2021-04-08

申请号：US17103519

申请日：2020-11-24

申请人： Lam Research Corporation

发明人： Theo Panagopoulos ,  Andreas Fischer ,  Thorsten Lill

IPC分类号： H01L21/311 ,  H01L21/3213

摘要： Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

公开(公告)号：US20200312670A1

公开(公告)日：2020-10-01

申请号：US16902532

申请日：2020-06-16

申请人： Lam Research Corporation

发明人： David Smith ,  Thorsten Lill ,  Andreas Fischer

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/768

摘要： A multi-station process tool for performing atomic layer etching of a surface of a substrate, includes: a first station having a first pedestal that supports the substrate when in the first station, the first pedestal being heated to a first predefined temperature; wherein the first station is configured to perform a surface conversion operation, by exposing an entirety of the surface of the substrate to a surface conversion reactant; a second station having a second pedestal that supports the substrate when in the second station, the second pedestal being heated to a second predefined temperature; wherein the second station is configured to perform a ligand exchange operation, by exposing the entirety of the surface of the substrate to a ligand containing reactant, wherein the second pedestal being heated to the second predefined temperature causes desorption of surface species, generated from the ligand exchange operation, from the surface of the substrate.

公开(公告)号：US20180247832A1

公开(公告)日：2018-08-30

申请号：US15615691

申请日：2017-06-06

申请人： Lam Research Corporation

发明人： Andreas Fischer ,  Thorsten Lill ,  Richard Janek

IPC分类号： H01L21/3213 ,  H01L21/225 ,  H01L21/326 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/225 ,  H01L21/31122 ,  H01L21/32138 ,  H01L21/326 ,  H01L21/67

摘要： A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

公开(公告)号：US20160086864A1

公开(公告)日：2016-03-24

申请号：US14495693

申请日：2014-09-24

申请人： Lam Research Corporation

发明人： Andreas Fischer ,  Thorsten Lill ,  David Trussell

IPC分类号： H01L21/66 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L22/26 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67253 ,  H01L22/12

摘要： Provided herein are methods and apparatuses for cleaning wafers by coating an active surface of the wafer with a film of water to clean the wafer, delivering gas from a gas nozzle to the center of the active surface to break a film of water on the active surface to form a wet-dry boundary while spinning the wafer, and moving the gas nozzle radially outward from the center to the edge of the active surface of the wafer by following the wet-dry boundary. Tracking devices, such as cameras or charge-coupled devices, and systems may be used with an apparatus for cleaning wafers by tracking the wet-dry boundary on the wafer to move the gas nozzle to follow the wet-dry boundary. Cleaning apparatuses provided herein may be integrated with etching tools.

摘要翻译： 本文提供了通过用水膜涂覆晶片的活性表面以清洁晶片来清洁晶片的方法和装置，将气体从气体喷嘴输送到活性表面的中心以破坏活性表面上的水膜 以在旋转晶片的同时形成湿干边界，并且通过跟随湿干边界从气体活动表面的中心向边缘径向向外移动气体喷嘴。 跟踪装置，例如照相机或电荷耦合装置以及系统可以与用于通过跟踪晶片上的湿 - 湿边界来清洁晶片的装置一起使用，以移动气体喷嘴以遵循湿 - 干边界。 本文提供的清洁装置可以与蚀刻工具集成。

公开(公告)号：US20160056023A1

公开(公告)日：2016-02-25

申请号：US14931672

申请日：2015-11-03

申请人： Lam Research Corporation

发明人： Neil Martin Paul Benjamin ,  Andreas Fischer

IPC分类号： H01J37/32

CPC分类号： H01J37/32541 ,  B23K9/013 ,  B23K10/00 ,  B23K2101/40 ,  H01J37/3211

摘要： Apparatus for use with a vessel used to generate plasma are provided. One apparatus includes a first comb structure configured to partially wrap around a circumference of the vessel. The first comb structure has a first end and a second end, and a first separation is defined between the first end and the second end. The first comb structure defines a first plurality of fingers oriented perpendicular to the circumference of the vessel. The first comb structure is configured to be connected to a first end of a radio frequency (RF) coil. Also provided is a second comb structure configured to partially wrap around the circumference of the vessel. The second comb structure has a first end and a second end. A second separation is defined between the first end and the second end the second comb structure. The second comb structure defines a second plurality of fingers oriented perpendicular to the circumference of the vessel. The second comb structure is configured to be connected to a second end of the RF coil. Further, ends of the first plurality of fingers and ends of the second plurality of fingers are configured to face each other and maintain a third separation.

摘要翻译： 提供了与用于产生等离子体的容器一起使用的装置。 一种装置包括构造成部分地围绕容器的圆周包围的第一梳状结构。 第一梳结构具有第一端和第二端，并且在第一端和第二端之间限定第一间隔。 第一梳结构限定垂直于容器圆周定向的第一多个手指。 第一梳状结构被配置为连接到射频（RF）线圈的第一端。 还提供了构造成部分地围绕容器的圆周包裹的第二梳结构。 第二梳结构具有第一端和第二端。 第二分离在第一端和第二端之间限定第二梳结构。 第二梳结构限定了垂直于容器圆周定向的第二多个手指。 第二梳状结构被配置为连接到RF线圈的第二端。 此外，第一多根指状物的端部和第二多个指状物的端部构造成彼此面对并保持第三分离。

公开(公告)号：US20150013906A1

公开(公告)日：2015-01-15

申请号：US13942502

申请日：2013-07-15

申请人： Lam Research Corporation

发明人： Andreas Fischer ,  John Holland

IPC分类号： H01L21/02

CPC分类号： H01J37/00 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01L2221/00

摘要： A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

摘要翻译： 一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。