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    Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
    22.
    发明授权
    Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same 失效
    具有阶梯式电压响应的电压可切换介电材料的配方及其制造方法

    公开(公告)号：US07872251B2

    公开(公告)日：2011-01-18

    申请号：US11903820

    申请日：2007-09-24

    Applicant: Lex Kosowsky ,  Robert Fleming

    Inventor： Lex Kosowsky ,  Robert Fleming

    IPC: H01L47/00

    CPC classification number: H01L21/02118 ,  B82Y30/00 ,  H01C7/12 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/318 ,  Y10S438/90

    Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.

    Abstract translation: 可变压电介质材料的配方包括均匀分散在电介质基质材料中的两种或多种不同类型的半导体材料。 选择半导体材料具有不同的带隙能量，以便提供具有阶梯式电压响应的电压可切换介电材料。 半导体材料可以包括无机颗粒，有机颗粒或可溶于介质基质材料或与之混溶的有机材料。 制剂任选地还可以包括导电材料。 制剂中的导电或半导体材料中的至少一种可以包括以纵横比为至少3或更大的特征的颗粒。

    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION
    29.
    发明申请
    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION 有权
    在垂直切换配置中使用电压可切换介质材料的嵌入层的衬底器件或封装

    公开(公告)号：US20090256669A1

    公开(公告)日：2009-10-15

    申请号：US12417589

    申请日：2009-04-02

    Applicant: Lex Kosowsky ,  Robert Fleming ,  Bhret Graydon

    Inventor： Lex Kosowsky ,  Robert Fleming ,  Bhret Graydon

    IPC: H01C7/10

    CPC classification number: H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K2201/0738 ,  H05K2203/105

    Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

    Abstract translation: 衬底器件包括覆盖导电元件或层以提供接地的VSD材料的嵌入层。 连接到要被保护的电路元件的电极延伸到衬底的厚度以与VSD层接触。 当电路元件在正常电压下工作时，VSD层是电介质的，不连接到地。 当在电路元件上发生瞬态电事件时，VSD层立即切换到导通状态，使得第一电极连接到地。

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