公开(公告)号：US06383942B1

公开(公告)日：2002-05-07

申请号：US09522168

申请日：2000-03-09

申请人： Masaki Narita ,  Hiroshi Sugiura

发明人： Masaki Narita ,  Hiroshi Sugiura

IPC分类号： H01L2100

CPC分类号： C23F4/00 ,  H01L21/32136

摘要： A dry etching method is disclosed for use in patterning a stacked film of a metal film containing aluminum as the base component and a thin film including at least one of titanium and titanium nitride. In this method, the thin film is dry-etched using a first etching gas (a mixture of CF4 gas, Ar gas and Cl gas) having a gas composition for preventing the metal film from being processed. The metal film is then dry-etched using a second etching gas (a mixture of Cl gas and BCl3 gas) having a gas composition other than the first etching gas.

摘要翻译： 公开了用于图案化含有铝作为基底成分的金属膜的叠层膜和包括钛和氮化钛中的至少一种的薄膜的干蚀刻方法。 在该方法中，使用具有防止金属膜被处理的气体组成的第一蚀刻气体（CF4气体，Ar气体和Cl气体的混合物）对该薄膜进行干蚀刻。 然后使用除了第一蚀刻气体之外的气体组成的第二蚀刻气体（Cl气体和BCl 3气体的混合物）对金属膜进行干法蚀刻。

公开(公告)号：US5926203A

公开(公告)日：1999-07-20

申请号：US751732

申请日：1996-11-18

申请人： Akira Shimura ,  Shuichi Yamazaki ,  Tomohiro Nakajima ,  Masaki Narita

发明人： Akira Shimura ,  Shuichi Yamazaki ,  Tomohiro Nakajima ,  Masaki Narita

IPC分类号： B41J2/44 ,  B41J2/47 ,  G03G21/00 ,  G03G21/14 ,  G06K15/12 ,  H04N1/113 ,  B41J2/45 ,  B41J2/435

CPC分类号： G06K15/1261 ,  B41J2/473

摘要： A method and apparatus that prevent degradation of an image quality due to a change of a beam pitch in a subscanning direction of each optical beam on a record medium. At a given time, for example, when power is first turned on, a CPU detects a beam pitch on a record medium, e.g., a photosensitive drum, by using a CCD line image sensor. If the detected value differs from a value set according to a currently-selected scanning density, an LD arrangement change motor is rotated via a motor driver so that the beam pitch matches the set value so as to change an arrangement of laser diodes in a laser diode array. Control over the beam pitch occurs for a variety of conditions including control at regular intervals, power-on events, or when a scanning density specification signal indicates a different beam pitch than the detected beam pitch. Similarly, adjustment over the beam pitch is not typically made during a copying operation.

摘要翻译： 一种防止由于每个光束在记录介质上的副扫描方向上的光束间距变化引起的图像质量劣化的方法和装置。 在给定的时间，例如，当电源首次打开时，CPU通过使用CCD线图像传感器来检测诸如感光鼓的记录介质上的光束间距。 如果检测值与根据当前选择的扫描浓度设定的值不同，则通过马达驱动器旋转LD布置改变马达，使得波束间距与设定值匹配，以便改变激光器中的激光二极管的布置 二极管阵列。 波束间距的控制发生在各种条件下，包括规则间隔的控制，上电事件，或当扫描浓度指示信号表示与检测的光束间距不同的光束间距时。 类似地，在复印操作期间通常不会对光束间距进行调整。

公开(公告)号：US06376347B1

公开(公告)日：2002-04-23

申请号：US09665962

申请日：2000-09-21

申请人： Mitsuhiro Ohmura ,  Masaki Narita

发明人： Mitsuhiro Ohmura ,  Masaki Narita

IPC分类号： H01L213205

CPC分类号： H01L29/66583 ,  H01L21/31138 ,  H01L21/31144 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： Disclosed is a method of making a gate wiring layer, in which a carbon-based layer is patterned by dry etching using a gas that does not etch a gate insulating layer so as to form a gate wiring layer without deteriorating the gate insulating layer and without etching the semiconductor substrate. In forming a gate insulating layer and a gate wiring layer on a semiconductor substrate, a carbon-based layer is formed on a semiconductor substrate, followed by forming a predetermined mask on the layer for patterning the layer. The carbon-based layer is etched by dry etching using an oxygen gas, a carbon monoxide gas or a mixed gas containing an oxygen gas, a nitrogen gas, a carbon monoxide gas and an argon gas and without containing a halogen gas. The etching is selectively stopped by the insulating layer. The insulating layer of, for example, SiO2 is etched by dry etching using a halogen-containing gas, but is scarcely etched by dry etching using an oxygen-containing gas that does not contain a halogen gas.

摘要翻译： 公开了一种制造栅极布线层的方法，其中通过使用不蚀刻栅极绝缘层的气体通过干法蚀刻来对碳基层进行图案化，从而形成栅极布线层而不会使栅极绝缘层恶化，并且没有 蚀刻半导体衬底。 在半导体衬底上形成栅极绝缘层和栅极布线层时，在半导体衬底上形成碳基层，然后在用于图案化层的层上形成预定的掩模。 通过使用氧气，一氧化碳气体或含有氧气，氮气，一氧化碳气体和氩气的混合气体并且不含卤素气体的干蚀刻来蚀刻碳基层。 蚀刻被绝缘层选择性地停止。 通过使用含卤素气体的干蚀刻蚀刻例如SiO 2的绝缘层，但是通过使用不含卤素气体的含氧气体的干蚀刻几乎不蚀刻。

公开(公告)号：US06368977B1

公开(公告)日：2002-04-09

申请号：US09605436

申请日：2000-06-29

申请人： Masaki Narita ,  Yukimasa Yoshida ,  Katsuaki Aoki ,  Hiroshi Fujita ,  Takashi O ,  Toshimitsu Omine ,  Isao Matsui ,  Osamu Yamazaki ,  Naruhiko Kaji

发明人： Masaki Narita ,  Yukimasa Yoshida ,  Katsuaki Aoki ,  Hiroshi Fujita ,  Takashi O ,  Toshimitsu Omine ,  Isao Matsui ,  Osamu Yamazaki ,  Naruhiko Kaji

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  H01J37/32082

摘要： There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

摘要翻译： 提供了一种半导体器件制造方法，其包括将处理过的衬底装载在反应室中的第一步骤，以预定流量将反应气体引入反应室的第二步骤，保持反应室内部的第三步骤 在预定压力下的反应室，通过向布置在反应室中的电极提供高频功率而开始产生等离子体的第四步骤，向经处理的基板施加预定处理的第五步骤，以及停止发生的第六步骤 的等离子体通过在预定处理完成之后停止供给高频功率，其中当等离子体的产生停止时反应气体被连续地引入。

公开(公告)号：US06313535B1

公开(公告)日：2001-11-06

申请号：US09268678

申请日：1999-03-16

申请人： Junichiro Iba ,  Masaki Narita ,  Tomio Katata

发明人： Junichiro Iba ,  Masaki Narita ,  Tomio Katata

IPC分类号： H01L2348

CPC分类号： H01L21/7685 ,  H01L21/76805 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring layer of a semiconductor integrated circuit comprises a first conductive film made of a material containing Al. A material, which reacts with Al at a rate lower than that at which Ti reacts with Al, is provided on the first conductive film. A first barrier metal film is formed, and an interlayer insulating film is formed thereon. An opening is formed in the interlayer insulating film so as to expose the first barrier metal film. The opening is buried to form a second conductive film electrically connected to the first conductive film.

摘要翻译： 半导体集成电路的布线层包括由含有Al的材料制成的第一导电膜。 与Al反应的速度低于Ti的材料与Al反应的材料设置在第一导电膜上。 形成第一阻挡金属膜，并在其上形成层间绝缘膜。 在层间绝缘膜中形成开口以露出第一阻挡金属膜。 掩模开口以形成与第一导电膜电连接的第二导电膜。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：US5846884A

公开(公告)日：1998-12-08

申请号：US879727

申请日：1997-06-20

申请人： Munir D. Naeem ,  Stuart M. Burns ,  Nancy Greco ,  Steve Greco ,  Virinder Grewal ,  Ernest Levine ,  Masaki Narita ,  Bruno Spuler

发明人： Munir D. Naeem ,  Stuart M. Burns ,  Nancy Greco ,  Steve Greco ,  Virinder Grewal ,  Ernest Levine ,  Masaki Narita ,  Bruno Spuler

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/32136

摘要： A method in a plasma processing chamber for etching through a selected portion of a layer stack. The layer stack comprises a metallization layer, a first barrier layer disposed adjacent to the metallization layer, and a photoresist layer disposed above the metallization layer. The method includes etching at least partially through the first barrier layer using a high sputter component etch. The method further includes etching at least partially through the metallization layer using a low sputter component etch. The low sputter component etch has a sputter component lower than a sputter component of the high sputter component etch.

摘要翻译： 一种等离子体处理室中用于蚀刻通过层堆叠的选定部分的方法。 层叠包括金属化层，邻近金属化层设置的第一阻挡层和设置在金属化层上方的光致抗蚀剂层。 该方法包括使用高溅射元件蚀刻至少部分地蚀刻第一阻挡层。 该方法还包括使用低溅射元件蚀刻至少部分地蚀刻金属化层。 低溅射元件蚀刻具有低于高溅射元件蚀刻的溅射元件的溅射元件。

公开(公告)号：US5337725A

公开(公告)日：1994-08-16

申请号：US124341

申请日：1993-09-20

申请人： Masaki Narita

发明人： Masaki Narita

IPC分类号： F02M25/07

CPC分类号： F02M26/61 ,  F02M26/49 ,  F02M26/57 ,  F02D41/0055

摘要： A self-diagnostic apparatus for determining whether an exhaust gas recirculating apparatus is in an abnormal condition. The exhaust gas recirculating apparatus includes a second negative pressure path for directly connecting an intake path to an EGR valve for bypassing a modulator, a second switching valve located in line with the second negative pressure path, and a control unit for controlling the second switching valve which fully opens and closes the EGR valve when a vehicle is decelerating. Pressure variations within the intake path are caused by the opening and closing action of the EGR valve. The pressure variations are detected by the intake path pressure sensor in order to determine a deteriorating condition of the exhaust gas recirculating apparatus in accordance with the detected pressure variation values.

摘要翻译： 一种用于确定废气再循环装置是否处于异常状态的自诊断装置。 废气再循环装置包括用于将进气通道直接连接到用于旁路调节器的EGR阀的第二负压路径，与第二负压路径对准的第二切换阀，以及用于控制第二切换阀 当车辆减速时，EGR阀完全打开和关闭。 进气道内的压力变化是由EGR阀的打开和关闭动作引起的。 通过进气通路压力传感器检测压力变化，以便根据检测到的压力变化值来确定废气再循环装置的恶化状况。

公开(公告)号：US07208400B2

公开(公告)日：2007-04-24

申请号：US10688965

申请日：2003-10-21

申请人： Toshiyuki Sasaki ,  Masaki Narita

发明人： Toshiyuki Sasaki ,  Masaki Narita

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/823437

摘要： There are provided a gate dielectric film formed on a semiconductor substrate; a gate electrode including: a first electrode layer formed on the gate dielectric film, a dielectric film having a thickness of 5 Å or more and 100 Å or less, and formed on the first electrode layer, and a second electrode layer formed on the dielectric film; and a source and drain regions formed in the semiconductor substrate at both sides of the gate electrode.

摘要翻译： 提供了形成在半导体衬底上的栅介质膜; 栅电极，包括：形成在所述栅极电介质膜上的第一电极层，形成在所述第一电极层上的厚度为或更大且小于或等于或小于100埃的电介质膜，以及形成在所述电介质上的第二电极层 电影; 以及在栅电极的两侧形成在半导体衬底中的源区和漏区。

公开(公告)号：US07067761B2

公开(公告)日：2006-06-27

申请号：US10742882

申请日：2003-12-23

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： B23K10/00

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.