公开(公告)号：US20100276663A1

公开(公告)日：2010-11-04

申请号：US12819016

申请日：2010-06-18

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L33/04 ,  H01L33/30 ,  H01L33/00 ,  C30B25/10

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333

摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.

摘要翻译： 在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜 第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。 在GaN基半导体外延区域15上，设置有源层17。 有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。 半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。 这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

公开(公告)号：US20120184057A1

公开(公告)日：2012-07-19

申请号：US13366748

申请日：2012-02-06

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

IPC分类号： H01L21/301

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/14

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，其中半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US20120086015A1

公开(公告)日：2012-04-12

申请号：US13243516

申请日：2011-09-23

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L29/20

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US20120008660A1

公开(公告)日：2012-01-12

申请号：US13211858

申请日：2011-08-17

申请人： Kei FUJII ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Yohei ENYA

发明人： Kei FUJII ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Yohei ENYA

IPC分类号： H01S5/343 ,  H01L33/04 ,  B82Y20/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3404 ,  H01S2304/04

摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.

摘要翻译： 提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。 半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜 沿着C轴方向的C x轴。 在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。 来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义 在LED模式下。

公开(公告)号：US20110228804A1

公开(公告)日：2011-09-22

申请号：US12836170

申请日：2010-07-14

申请人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Shimpei TAKAGI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/30 ,  H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US20110076788A1

公开(公告)日：2011-03-31

申请号：US12837248

申请日：2010-07-15

申请人： Takashi KYONO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Masahiro ADACHI ,  Shinji TOKUYAMA

发明人： Takashi KYONO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Masahiro ADACHI ,  Shinji TOKUYAMA

IPC分类号： H01L21/66

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。

公开(公告)号：US20110057200A1

公开(公告)日：2011-03-10

申请号：US12940879

申请日：2010-11-05

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L29/207

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

公开(公告)号：US20100322276A1

公开(公告)日：2010-12-23

申请号：US12844446

申请日：2010-07-27

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Shinji TOKUYAMA ,  Koji KATAYAMA ,  Takao NAKAMURA ,  Takatoshi IKEGAMI

IPC分类号： H01S5/30 ,  H01L33/00 ,  H01L21/02 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US20120269220A1

公开(公告)日：2012-10-25

申请号：US13354053

申请日：2012-01-19

申请人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

发明人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

IPC分类号： H01S5/323 ,  H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

公开(公告)号：US20120112204A1

公开(公告)日：2012-05-10

申请号：US13294010

申请日：2011-11-10

申请人： Takashi KYONO ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO

发明人： Takashi KYONO ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO

IPC分类号： H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/18 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/3211

摘要： For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.

摘要翻译： 对于氮化物半导体发光器件，支撑衬底的六边形GaN的c轴矢量相对于垂直于主表面的法线轴Nx相对于X轴方向倾斜。 在半导体区域中，在支撑基板的主表面上沿着法线布置有源层，第一氮化镓基半导体层，电子阻挡层和第二氮化镓基半导体层。 p型覆层由AlGaN构成，电子阻挡层由AlGaN构成。 电子阻挡层在X轴方向上受到拉伸应变。 第一氮化镓基半导体层在X轴方向上受到压应变。 界面处的错配位错密度小于界面处的位错密度。 在界面处的电子势垒由压电极化引起。