公开(公告)号：US20120269220A1

公开(公告)日：2012-10-25

申请号：US13354053

申请日：2012-01-19

申请人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

发明人： Takashi KYONO ,  Shimpei TAKAGI ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA

IPC分类号： H01S5/323 ,  H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

公开(公告)号：US20130051417A1

公开(公告)日：2013-02-28

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

发明人： Takamichi SUMITOMO ,  Takashi KYONO ,  Masaki UENO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Masahiro ADACHI ,  Shimpei TAKAGI ,  Katsunori YANASHIMA

IPC分类号： H01S5/30

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US20130009202A1

公开(公告)日：2013-01-10

申请号：US13538513

申请日：2012-06-29

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01L33/32

CPC分类号： H01L33/14 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.

摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。 第一和第二接触层包括p型氮化镓基半导体。 第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。 发光层包括氮化镓基半导体。 第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。 第二接触层的厚度在1〜50nm的范围内。

公开(公告)号：US20120327967A1

公开(公告)日：2012-12-27

申请号：US13480178

申请日：2012-05-24

申请人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Yohei ENYA ,  Yusuke YOSHIZUMI ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01S5/323 ,  H01L33/32

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.

摘要翻译： 氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。 该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。 有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

公开(公告)号：US20120269222A1

公开(公告)日：2012-10-25

申请号：US13366636

申请日：2012-02-06

申请人： Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

发明人： Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

IPC分类号： H01S5/343

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。