公开(公告)号：US5759746A

公开(公告)日：1998-06-02

申请号：US653426

申请日：1996-05-24

申请人： Tsukasa Azuma ,  Tokuhisa Ohiwa ,  Tetsuo Matsuda ,  David M. Dobuzinsky ,  Katsuya Okumura

发明人： Tsukasa Azuma ,  Tokuhisa Ohiwa ,  Tetsuo Matsuda ,  David M. Dobuzinsky ,  Katsuya Okumura

IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  G03F7/26

CPC分类号： G03F7/091 ,  H01L21/0276 ,  Y10S430/151 ,  Y10S438/945 ,  Y10S438/95

摘要： A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.

摘要翻译： 制造工艺包括提供待制造的基板的步骤。 然后在基板上形成多层抗反射层。 在多层抗反射层上形成厚度小于850纳米的图案化抗蚀剂，并使用图案化的抗蚀剂作为掩模制造基板。

公开(公告)号：US5310454A

公开(公告)日：1994-05-10

申请号：US26042

申请日：1993-03-04

申请人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

发明人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/31116

摘要： A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.

摘要翻译： 通过等离子体蚀刻的干蚀刻方法形成在硅基板上形成的氧化硅层上具有至多1μm宽的开口的掩模图案。 衬底被引入具有蚀刻气体引入装置的反应室和碳氟化合物气体和氢气作为蚀刻气体，使得氢气与气体混合物的比率满足50％至80％。 产生等离子体，并且通过使用等离子体蚀刻，根据掩模图案蚀刻氧化硅层，以在氧化硅层中形成长径比大于1的开口。

公开(公告)号：US09126229B2

公开(公告)日：2015-09-08

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14 ,  H01L21/02 ,  H01L21/311

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US08487365B2

公开(公告)日：2013-07-16

申请号：US13041532

申请日：2011-03-07

申请人： Toshiyuki Sasaki ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

发明人： Toshiyuki Sasaki ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

IPC分类号： H01L29/792

CPC分类号： H01L29/7926 ,  H01L21/84 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/66833

摘要： According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

摘要翻译： 根据一个实施例，半导体器件包括衬底，下栅极层，层叠体，虚设电极层，绝缘膜和沟道体。 下栅极层设置在衬底上。 堆叠体包括多个绝缘层和交替堆叠在下栅极层上的多个电极层。 虚设电极层设置在下电极层和层叠体之间，由与电极层相同的材料制成，并且比每个电极层厚。 绝缘膜包括设置在贯穿层叠体形成的孔的侧壁上的电荷存储膜和虚拟电极层。 通道体设置在孔中的绝缘膜的内侧。

公开(公告)号：US20070273880A1

公开(公告)日：2007-11-29

申请号：US11882275

申请日：2007-07-31

申请人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

发明人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

IPC分类号： G01J4/00

CPC分类号： H01L21/76802 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/22 ,  H01J37/32935 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

摘要翻译： 过程监控系统具有被配置为保持要处理的对象的处理室，被配置为向对象发光的照明源，被配置为使光偏振的偏振器，具有双折射材料并设置在处理室上的监视器窗 传播光，方向调整装置，被配置为调节光的偏振面与监视窗的光轴的方向之间的关系;以及监视信息处理器，被配置为检测从物体反射的光。

公开(公告)号：US20070082493A1

公开(公告)日：2007-04-12

申请号：US11525179

申请日：2006-09-22

申请人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

发明人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

IPC分类号： H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/311 ,  H01L21/32139 ,  H01L28/55 ,  H01L28/65 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

摘要翻译： 一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模 粘附到蚀刻目标膜上，并除去蚀刻掩模。

公开(公告)号：US06911398B2

公开(公告)日：2005-06-28

申请号：US10107434

申请日：2002-03-28

申请人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

发明人： Masaki Narita ,  Katsuya Okumura ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/67271 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a semiconductor device, comprises preparing a plurality of lots each including semiconductor substrates to be processed, the plurality of lots including at least first and second lots, processing the plurality of lots for every one lot, using a semiconductor manufacturing apparatus, judging whether or not the semiconductor manufacturing apparatus is subjected to cleaning before the second lot is processed, depending upon both a first processing type of the first lot to be processed and a second processing type of the second lot to be processed after the first lot, and processing the second lot without the cleaning in the case where the second lot does not require the cleaning.

摘要翻译： 一种制造半导体器件的方法，包括制备多个批次，每个批次包括要处理的半导体衬底，所述多个批次至少包括第一批次和第二批次，使用半导体制造装置处理每批的多个批次， 根据第一批次的待处理的第一处理类型和第一批次之后的待处理的第二批次的第二处理类型，判断半导体制造装置是否在处理第二批次之前进行清洁， 并且在第二批次不需要清洁的情况下处理第二批而不进行清洁。

公开(公告)号：US06369423B2

公开(公告)日：2002-04-09

申请号：US09033899

申请日：1998-03-03

申请人： Tokuhisa Ohiwa ,  Jeffrey P. Gambino ,  Katsuya Okumura ,  Jun-ichi Shiozawa

发明人： Tokuhisa Ohiwa ,  Jeffrey P. Gambino ,  Katsuya Okumura ,  Jun-ichi Shiozawa

IPC分类号： H01L2976

CPC分类号： H01L21/76897 ,  H01L27/10873 ,  H01L27/10888

摘要： The present invention intends to provide a semiconductor device capable of realizing a thin gate stack and the manufacturing method thereof. A gate cap layer and/or a protection insulating film (an etching stopper) has a plurality of insulating materials such as oxide and nitride stacked on each other. With this structure, an insulating layer having an etching rate lower than that of the interlayer insulating layer, for example, can be exposed during the etching of the interlayer insulating layer, and the gate stack can be formed thin and the aspect ratio of the contact hole formed in the device can be reduced. The present invention can realize a thin gate stack in such a manner, and thus is suitable for a SAC used in a DRAM.

摘要翻译： 本发明旨在提供一种能够实现薄栅堆叠的半导体器件及其制造方法。 栅极覆盖层和/或保护绝缘膜（蚀刻阻挡层）具有堆叠在一起的多个绝缘材料，例如氧化物和氮化物。 利用这种结构，在层间绝缘层的蚀刻期间可以暴露具有比层间绝缘层的蚀刻速率低的蚀刻速率的绝缘层，并且可以使栅极堆叠形成得较薄，并且接触的纵横比 可以减少在装置中形成的孔。 本发明可以以这种方式实现薄栅堆叠，因此适用于在DRAM中使用的SAC。

公开(公告)号：US5756402A

公开(公告)日：1998-05-26

申请号：US426693

申请日：1995-04-24

申请人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

发明人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical. A method for etching a silicon nitride film, includes the steps of exciting gas containing fluorine and oxygen gas, thereby generating a fluorine radical and an oxygen radical, supplying the fluorine radical and the oxygen radical close to a substrate having the silicon nitride film and supplying gas of a compound containing a hydroxyl close to the substrate, reacting the fluorine radical, the oxygen radical and the compound containing the hydroxyl, thereby generating a compound of the fluorine radical, the oxygen radical and a compound of fluorine and hydrogen, and selectively etching the silicon nitride film from the substrate with the compound of the fluorine radical, the oxygen radical and the compound of fluorine and hydrogen.

摘要翻译： 一种用于蚀刻氮化硅膜的方法包括以下步骤：在具有氮化硅膜的衬底附近提供氟基，氟和氢的化合物和氧自由基，并从衬底中选择性地蚀刻氮化硅膜， 氟自由基，氟和氢的化合物和氧自由基。 一种用于蚀刻氮化硅膜的方法包括以下步骤：激发含氟和氧气的气体，从而产生氟基和氧自由基，将氟自由基和氧自由基靠近具有氮化硅膜的基板并供应 含有靠近底物的羟基化合物的气体，使氟自由基，氧自由基和含有羟基的化合物反应，从而产生氟自由基，氧自由基和氟和氢的化合物的化合物，并选择性地蚀刻 来自衬底的氮化硅膜与氟自由基，氧自由基以及氟和氢的化合物组成。

公开(公告)号：US20140083979A1

公开(公告)日：2014-03-27

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。