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21.发明申请Semiconductor manufacturing apparatus capable of preventing adhesion of particles 审中-公开能够防止颗粒附着的半导体制造装置公开(公告)号：US20060169207A1
公开(公告)日：2006-08-03
申请号：US11068780
申请日：2005-03-02
CPC分类号： H01L21/67742 , C23C16/4401 , H01J2237/022 , H01L21/67017 , H01L21/67748
摘要： A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the processing chamber and the transportation chamber, a transportation device including a transportation arm disposed in the transportation chamber and a sample holding portion disposed at a tip of the arm to hold the sample on the sample holding portion, transport the sample from the transportation chamber to the processing chamber, and transport the processed sample from the processing chamber to the transportation chamber, and a gas blowing unit for blowing gas against the sample so as to be interlocked with a transportation position of the sample being transported to prevent adhesion of floating particles to a surface of the sample.
摘要翻译： 半导体制造装置包括真空处理室和输送室，每个真空处理室和输送室均包括气体供给单元和排气单元，用于将样品放置在其上并将样品保持在处理室中的样品放置电极，用于打开/关闭的闸阀 所述处理室与所述输送室之间的通道，包括设置在所述输送室中的输送臂的输送装置和设置在所述臂的前端的样品保持部，以将样品保持在所述样品保持部上， 运送室到处理室，并将处理后的样品从处理室输送到运送室;以及气体吹送单元，用于将气体吹向样品，以与被运送的样品的运输位置互锁，以防止粘附 漂浮的颗粒到样品的表面。
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公开(公告)号：US20060016559A1
公开(公告)日：2006-01-26
申请号：US10911610
申请日：2004-08-05
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中具有不同组成比的O 2或N 2 2的至少两种处理气体被引入到处理室 通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。
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公开(公告)号：US09150964B2
公开(公告)日：2015-10-06
申请号：US12191373
申请日：2008-08-14
IPC分类号： C23C14/00 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译： 通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量。 用于容纳气体扩散器的气体扩散室安装在真空处理装置中。
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公开(公告)号：US20110030899A1
公开(公告)日：2011-02-10
申请号：US12709149
申请日：2010-02-19
申请人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
发明人： Keizo SUZUKI , Masaru Izawa , Nobuyuki Negishi , Kenetsu Yokogawa , Kenji Maeda
CPC分类号： H01J37/3255 , H01J37/32091 , H01J37/32577
摘要： At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.
摘要翻译： 放电电磁波的至少一部分经由具有作为放电电磁波的电介质（电绝缘体）的特性的透射电极被引入处理室，并且作为用于RF偏置电磁的导电性材料 离子等离子体振荡的电磁波波。
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公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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26.发明申请公开(公告)号：US20090183683A1
公开(公告)日：2009-07-23
申请号：US12035759
申请日：2008-02-22
IPC分类号： C23C16/455 , B05C11/02 , B05C9/00 , H01L21/306
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得喷淋板的背侧的压力成为压力 这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。
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公开(公告)号：US20080308134A1
公开(公告)日：2008-12-18
申请号：US11850154
申请日：2007-09-05
IPC分类号： B08B3/00
CPC分类号： B08B7/0035 , H01L21/67069 , H01L21/6708
摘要： The invention provides a substrate processing apparatus capable of removing unnecessary deposition films attached to a bevel portion of a substrate to be processed with high efficiency and at low cost without causing damage to the inner areas of the substrate to be processed having patterns formed thereto and without causing heavy metal contamination. The substrate processing apparatus comprises a rotary stage 1 on which a substrate 2 to be processed is placed having a smaller diameter than the diameter of the substrate 2, a gas supply structure unit 3 disposed above the substrate 2 to be processed for forming a gas flow for protecting a pattern formed on an upper surface of the substrate to be processed, a first gas supply system 11 for supplying nonreactive gas to the gas supply structure unit 3, an atmospheric pressure microplasma source 4 having a nozzle for supplying radicals for removing unnecessary deposits on an outer circumference portion of the substrate to be processed, a second gas supply system 14 for supplying gas to the atmospheric pressure microplasma source 4, a high frequency power supply 13 for supplying power to the atmospheric pressure microplasma source 4, and a vacuum means 5 for vacuuming and removing reaction products from the outer circumference portion of the substrate 2 to be processed.
摘要翻译： 本发明提供了一种基板处理装置，其能够以高效率和低成本地去除附着在待处理基板的斜面部分上的不必要的沉积膜，而不会对被加工的基板的内部区域造成损害，所述内部区域形成有图案并且没有 造成重金属污染。 基板处理装置包括：旋转台1，其上放置直径小于基板2的直径的待加工基板2;气体供给结构单元3，设置在待加工基板2的上方，用于形成气流 用于保护形成在待处理基板的上表面上的图案，用于向气体供应结构单元3供应非反应性气体的第一气体供应系统11，具有用于提供自由基的喷嘴以除去不需要的沉积物的大气压微量源4 在待处理基板的外周部分上设置用于向大气压原子源4供给气体的第二气体供给系统14，向大气压等离子体源4供电的高频电源13，以及真空装置 5，用于对待处理的基板2的外周部分进行真空和去除反应产物。
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公开(公告)号：US20080236748A1
公开(公告)日：2008-10-02
申请号：US11835449
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01J37/32935 , H01J37/32522 , H01J37/32623 , H01J37/32642 , H01J37/32954 , H01J37/32972
摘要： In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform.
摘要翻译： 在包括处理室，等离子体生产所需的高频电源，向处理室供给气体的单元，喷淋板，对处理室进行减压的排气单元的等离子体处理装置中， 放置待处理的样品和聚焦环，可以调节聚焦环的温度。 包括测量处理室中的气体温度分布的单元。 基于气体温度分布的测量结果，控制聚焦环的温度，使待处理样品的表面中的气体温度均匀。
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29.发明申请SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS CAPABLE OF REDUCING PARTICLE CONTAMINATION 审中-公开减少颗粒污染的半导体器件制造设备公开(公告)号：US20080017318A1
公开(公告)日：2008-01-24
申请号：US11668038
申请日：2007-01-29
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： In a semiconductor device manufacturing apparatus which is equipped with: a process chamber; a unit for supplying gas to said process chamber; a exhausting unit to reduce pressure in said process chamber; a high frequency power source for plasma generation; a coil for generating a magnetic field; and a mounted electrode for mounting a substance to be processed, particles were transported in the circumference direction of said substance to be processed by thermo-phoretic force, by changing the magnetic field distribution, so as to make a plasma distribution at the surface of said substance to be processed, in a convex form, in ignition of the plasma or after completion of a predetermined processing, compared with the plasma distribution during said predetermined processing to said substance to be processed, and thus to generate temperature gradient of processing gas just above said substance to be processed.
摘要翻译： 在配备有处理室的半导体装置制造装置中， 用于向所述处理室供应气体的单元; 用于减少所述处理室中的压力的排气单元; 用于等离子体产生的高频电源; 用于产生磁场的线圈; 以及安装用于安装被处理物质的安装电极，通过改变磁场分布，通过热电解力将粒子沿着所述待加工物质的周向方向输送，以使所述等离子体分布在所述 与所述预定处理期间的等离子体分布相比，等离子体点火时或者在完成预定处理后，处于凸形状的物质与刚刚上述的处理气体的温度梯度相比较 说物质被处理。
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公开(公告)号：US20060236932A1
公开(公告)日：2006-10-26
申请号：US11201243
申请日：2005-08-11
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： The invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample. The plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
摘要翻译： 本发明提供一种等离子体处理装置，其能够防止颗粒的产生并防止颗粒对样品的影响。 等离子体处理装置包括真空室; 处理气体引入装置，用于将处理气体引入真空室; 装置，耦合到第一RF电源，用于将RF能量施加到引入到真空室中的工艺气体，以将工艺气体转化为等离子体; 用于将样品安装在其上表面并将样品保持在真空室中的样品安装电极; 用于抽真空室中的处理气体的排气装置; 以及设置在真空室中的安装电极的周边侧的等离子体限制装置，用于使由排气装置产生的处理气体的流动在安装电极的样品安装表面的下游侧流动，以防止等离子体向下游扩散 的样品安装面。
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