公开(公告)号：US07456428B2

公开(公告)日：2008-11-25

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L29/04

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

公开(公告)号：US20070131962A1

公开(公告)日：2007-06-14

申请号：US11675223

申请日：2007-02-15

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Hiroshi Saito ,  Makoto Ohkura

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Hiroshi Saito ,  Makoto Ohkura

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A display panel includes an insulating substrate, a pixel portion, a gate driver circuit portion, and a drain driver circuit portion. The pixel portion, gate driver circuit portion and drain driver circuit portion are formed out of thin film transistors on the insulating substrate, and the thin film transistors forming the pixel portion, the gate driver circuit portion and the drain driver circuit portion are built in poly-crystalline silicon films, respectively. Each of the poly-crystalline silicon films forming the thin film transistors is formed out of one of at least two kinds of crystal grains different in grain size.

摘要翻译： 显示面板包括绝缘基板，像素部分，栅极驱动电路部分和漏极驱动电路部分。 像素部分，栅极驱动器电路部分和漏极驱动器电路部分由绝缘基板上的薄膜晶体管形成，并且形成像素部分的薄膜晶体管，栅极驱动器电路部分和漏极驱动器电路部分内置于聚 晶体硅膜。 形成薄膜晶体管的多晶硅膜中的每一个由晶粒尺寸不同的至少两种晶粒中的一种形成。

公开(公告)号：US07132343B2

公开(公告)日：2006-11-07

申请号：US10753157

申请日：2004-01-08

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Hiroshi Saito ,  Makoto Ohkura

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Hiroshi Saito ,  Makoto Ohkura

IPC分类号： H01L21/336 ,  H01L21/76

CPC分类号： H01L21/02691 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region. The periphery of the pixel region is scanned/irradiated with a time-modulated continuous-wave solid-state laser beam formed linearly. Thus, a peripheral circuit region including a drive circuit is formed as a poly-crystalline silicon film with crystals growing up in the scanning direction. Pixel portion thin film transistors are produced in the uniform fine poly-crystalline silicon film, while a drive circuit or an interface circuit is produced in the peripheral circuit region. One of substrates of a display panel is formed thus. A display panel including transistors with uniform properties in the pixel portion and transistors with excellent properties in the peripheral circuit portion including the drive circuit is obtained.

摘要翻译： 用形成在其上的非晶硅膜的绝缘基板的整个表面用直线或矩形的固态脉冲激光束进行扫描/照射，以形成用于形成像素区域的均匀的多晶硅薄膜。 用线性形成的时间调制的连续波固态激光束对像素区域的周边进行扫描/照射。 因此，包括驱动电路的外围电路区域形成为具有沿扫描方向长大的晶体的多晶硅膜。 在均匀的微细多晶硅膜中制造像素部分薄膜晶体管，同时在外围电路区域中产生驱动电路或接口电路。 因此形成显示面板的基板之一。 获得包括像素部分中具有均匀特性的晶体管和包括驱动电路的外围电路部分具有优异特性的晶体管的显示面板。

公开(公告)号：US20050170569A1

公开(公告)日：2005-08-04

申请号：US10991482

申请日：2004-11-19

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

IPC分类号： G02F1/1345 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/42 ,  G02F1/136 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/38 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： B23K26/073 ,  B23K26/702 ,  H01L27/14625

摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing. In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.

摘要翻译： 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号 。 入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件， 基于信号处理的结果。 以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

公开(公告)号：US5229569A

公开(公告)日：1993-07-20

申请号：US707608

申请日：1991-05-30

申请人： Tateoki Miyauchi ,  Shigenobu Maruyama ,  Katsurou Mizukoshi ,  Mikio Hongo ,  Koyo Morita ,  Kaoru Katayama ,  Minoru Suzuki ,  Kazuo Mera ,  Haruhisa Sakamoto

发明人： Tateoki Miyauchi ,  Shigenobu Maruyama ,  Katsurou Mizukoshi ,  Mikio Hongo ,  Koyo Morita ,  Kaoru Katayama ,  Minoru Suzuki ,  Kazuo Mera ,  Haruhisa Sakamoto

IPC分类号： B23K26/03

CPC分类号： B23K26/032

摘要： A laser machining apparatus includes a laser beam source, such as of excimer laser, which produces a laser beam to be projected on a work piece or a sample, first and second illumination light sources which have wavelengths substantially equal to the wavelength of the laser beam and illuminate the entire image and the laser beam, respectively, a first beam splitter which guides the image produced by the illumination light to an observation unit, a second beam splitter which guides the laser beam from the laser beam source to an objective lens, and a controller which controls the machining condition including the relative positioning between the sample and the laser beam depending on the result of observation. The laser beam guide path structure from the laser beam source to the sample has its interior wall made of laser-transparent material such as glass, and the transparent material is enclosed by a laser blocking material such as a metal or water.

公开(公告)号：US5086015A

公开(公告)日：1992-02-04

申请号：US394364

申请日：1989-08-15

申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76802 ,  Y10S148/046

摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

摘要翻译： 公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且 上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。 此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤 具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔 在半导体器件中形成预定形状。

公开(公告)号：US4795720A

公开(公告)日：1989-01-03

申请号：US96778

申请日：1987-09-14

申请人： Takao Kawanabe ,  Morio Inoue ,  Mikio Hongo

发明人： Takao Kawanabe ,  Morio Inoue ,  Mikio Hongo

IPC分类号： H01L27/10 ,  H01L21/768 ,  H01L21/82 ,  H01L23/525 ,  H01L21/465 ,  H01L21/473

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  Y10S438/94 ,  Y10S438/958

摘要： Herein disclosed are a method of producing a semiconductor device. Especially in a device constructed to have a defective circuit replaced by a redundant circuit, after a fuse is cut by exposure to a laser beam, a portion to be fused is irradiated in a predetermined gas atmosphere with an optical ray to selectively form a CVD film thereby to form a protection film over the fuse so that the formation of the protection film is simplified after the fuse is cut, whereby any rise in the production cost is suppressed while improving the production yield and reliability.

摘要翻译： 这里公开的是制造半导体器件的方法。 特别是在被构造成具有由冗余电路取代的有缺陷的电路的器件中，在通过暴露于激光束切断熔丝之后，将要熔化的部分在预定的气体气氛中用光线照射以选择性地形成CVD膜 从而在保险丝上形成保护膜，从而在保险丝切断之后简化保护膜的形成，从而在提高生产成品率和可靠性的同时抑制生产成本的上升。

公开(公告)号：US4581628A

公开(公告)日：1986-04-08

申请号：US424370

申请日：1982-09-27

申请人： Tateoki Miyauchi ,  Mikio Hongo ,  Masao Mitani ,  Isao Tanabe ,  Toshiaki Masuhara

发明人： Tateoki Miyauchi ,  Mikio Hongo ,  Masao Mitani ,  Isao Tanabe ,  Toshiaki Masuhara

IPC分类号： H01L21/3205 ,  H01L21/00 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/552 ,  H01L27/10 ,  H01L23/48 ,  H01L29/04

CPC分类号： H01L21/82 ,  H01L23/525 ,  H01L23/5254 ,  H01L23/552 ,  H01L2924/0002

摘要： The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.

摘要翻译： 本发明是一种半导体集成电路器件，其特征在于，在设置在半导体衬底上的绝缘膜上形成电路编程布线层，并且在电路编程布线层周围沉积遮光保护掩模材料，除了 程序部分，通过绝缘膜。

公开(公告)号：US4444801A

公开(公告)日：1984-04-24

申请号：US338864

申请日：1982-01-12

申请人： Mikio Hongo ,  Masao Mitani ,  Tateoki Miyauchi ,  Masaaki Okunaka ,  Katsuro Mizukoshi

发明人： Mikio Hongo ,  Masao Mitani ,  Tateoki Miyauchi ,  Masaaki Okunaka ,  Katsuro Mizukoshi

IPC分类号： G03F1/72 ,  H05K3/10 ,  H05K3/22 ,  B23K9/00 ,  B05D3/06 ,  G01D9/42 ,  G01D15/10

CPC分类号： G03F1/72 ,  H05K3/105 ,  H05K3/225

摘要： A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray to deposit a metal, a metal oxide or a composition thereof, while the light transmission quantity through the transparent defect portion is measured. After the measurement falls below a predetermined level relative to the quantity of the transmitted light at the start of exposure, the exposure is terminated to thereby complete the correction of the transparent defects.

摘要翻译： 公开了一种用于校正光掩模上的透明缺陷的方法和装置。 将金属 - 有机络合物溶液施加到光掩模上的透明缺陷部分及其周边。 然后透明的缺陷部分暴露于可见光或紫外线以沉积金属，金属氧化物或其组合物，同时测量通过透明缺陷部分的透光量。 在相对于曝光开始时的透射光量的测量值下降到预定水平之外，终止曝光，从而完成透明缺陷的校正。

公开(公告)号：US4190759A

公开(公告)日：1980-02-26

申请号：US922369

申请日：1978-07-06

申请人： Mikio Hongo ,  Junichi Nakabayashi

发明人： Mikio Hongo ,  Junichi Nakabayashi

IPC分类号： B23K26/08 ,  G03F1/72 ,  H05K3/00 ,  H05K3/02 ,  H05K3/22 ,  B23K9/00

CPC分类号： B23K26/0063 ,  B23K26/082 ,  B23K26/0853 ,  G03F1/72 ,  H05K3/0002 ,  H05K3/027 ,  H05K3/225

摘要： A laser beam of a pulse width 10 to 20 nanoseconds is irradiated and scanned relatively and two-dimensionally on a metal thin film formed on a transparent substrate from the transparent substrate side and through the transparent substrate with a superposition number of laser beam spots set up to at most 15 and to thereby remove a predetermined region of the metal thin film. The irradiated metal film begins to melt from the substrate side and is removed away explosively from the substrate, leaving the substrate substantially unaffected.

摘要翻译： 将脉冲宽度为10〜20纳秒的激光束从透明基板侧在透明基板上形成的金属薄膜上相对二维地进行二维扫描，并通过透明基板以叠加数量的激光束点设置 至多15°，从而去除金属薄膜的预定区域。 被照射的金属膜从基板侧开始熔化，并从基板上被爆炸地移走，留下基板基本上不受影响。