公开(公告)号：US20200239992A1

公开(公告)日：2020-07-30

申请号：US16488050

申请日：2018-02-20

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Ming-Zhe Bian ,  Taisuke Sasaki ,  Kazuhiro Hono ,  Byeongchan Suh ,  Shigeharu Kamado ,  Taiki Nakata

IPC: C22F1/06 ,  C22C23/04 ,  C22C23/02

Abstract: Disclosed are a highly versatile magnesium alloy that can achieve both formability and strength in a temperature range including room temperature, and a method for manufacturing the magnesium alloy, wherein the obtained magnesium alloy contains 0.2 to 2 wt % of Al, 0.2 to 1 wt % of Mn, 0.2 to 2 wt % of Zn, and at least 0.2 to 1 wt % of Ca, the remainder comprising Mg and unavoidable impurities, and a precipitate comprising Mg, Ca, and Al is dispersed on the (0001) plane of a magnesium matrix.

公开(公告)号：US10205091B2

公开(公告)日：2019-02-12

申请号：US15424515

申请日：2017-02-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US09899044B2

公开(公告)日：2018-02-20

申请号：US15500713

申请日：2015-07-28

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono ,  Ye Du

IPC: G11B5/39 ,  G11B5/40 ,  G11B5/127

CPC classification number: G11B5/3906 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/40 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

公开(公告)号：US09589583B1

公开(公告)日：2017-03-07

申请号：US15339094

申请日：2016-10-31

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Ye Du ,  Takao Furubayashi ,  Yukiko Takahashi ,  Kazuhiro Hono

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

公开(公告)号：US20150132609A1

公开(公告)日：2015-05-14

申请号：US14367348

申请日：2013-03-22

Applicant: National Institute for Materials Science

Inventor： Masamitsu Hayashi ,  Sinha Jaivardhan ,  Masaya Kodzuka ,  Tomoya Nakatani ,  Yukiko Takahashi ,  Takao Furubayashi ,  Seiji Mitani ,  Kazuhiro Hono

IPC: G11B5/65 ,  C23C14/34 ,  G11C11/14 ,  C23C14/06 ,  G01R33/00 ,  G11B5/73 ,  G11B5/851

CPC classification number: G11B5/656 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/34 ,  C23C14/35 ,  G01R33/00 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/64 ,  G11B5/732 ,  G11B5/851 ,  G11C11/14 ,  G11C11/161 ,  H01F10/007 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。

公开(公告)号：US20130302649A1

公开(公告)日：2013-11-14

申请号：US13935095

申请日：2013-07-03

Applicant: National Institute for Materials Science

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/16 ,  G11B5/31 ,  C22C19/07 ,  G11B5/39

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: [Problem to be Solved]To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same.[Solution]A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: [待解决的问题]为了实现具有高性能的自旋电子装置，本发明的目的是提供具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 [溶液] Co2Fe（GaxGe1-x）Heusler合金在0.25

公开(公告)号：US11585873B2

公开(公告)日：2023-02-21

申请号：US17370613

申请日：2021-07-08

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Hiroaki Sukegawa ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.

公开(公告)号：US20230049280A1

公开(公告)日：2023-02-16

申请号：US17788964

申请日：2020-12-22

Applicant: TOHOKU MAGNET INSTITUTE CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Tatsuya Tomita ,  Yohei Nomura ,  Jun Uzuhashi ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: C22C38/16

Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.

公开(公告)号：US10749105B2

公开(公告)日：2020-08-18

申请号：US15939903

申请日：2018-03-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US08872291B2

公开(公告)日：2014-10-28

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。