Abstract:
A thermal bonding sheet includes a layer, in which an average area of a pore portion in a cross section of the layer after being heated at a heating rate of 1.5° C./sec from 80° C. to 300° C. under pressure of 10 MPa, and then held at 300° C. for 2.5 minutes is in a range of 0.005 μm2 to 0.5 μm2.
Abstract:
Provided is a thermal bonding sheet which suppresses a compositional material of the thermal bonding sheet from protruding during bonding and from creeping up onto the surface of an object to be bonded, and provides a strong sintered layer after sintering. A thermal bonding sheet includes a layer. When the layer is analyzed by a differential thermal balance from 23° C. to 500° C. in an air atmosphere at a heating rate of 10° C./min, a value obtained by subtracting a weight decrease amount (%) at 300° C. from a weight decrease amount (%) at 500° C. is in a range of −1% to 0%.
Abstract:
A thermal bonding sheet includes a layer, in which an average area of a pore portion in a cross section of the layer after being heated at a heating rate of 1.5° C./sec from 80° C. to 300° C. under pressure of 10 MPa, and then held at 300° C. for 2.5 minutes is in a range of 0.005 μm2 to 0.5 μm2.
Abstract:
A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5° C./sec from 80° C. to 300° C. under pressure of 10 MPa, and then held at 300° C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.
Abstract:
The present invention provides a film adhesive that can prevent a thermal effect to a semiconductor wafer and that can suppress warping of the semiconductor wafer; a dicing tape with a film adhesive; and a method of manufacturing a semiconductor device.The present invention relates to a film adhesive comprising a thermoplastic resin and electrically conductive particles, the film adhesive having an adhesion strength measured at 25° C. after the film adhesive is pasted to a mirror silicon wafer at 40° C. of 0.5 N/10 mm or more.