Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
    25.
    发明授权
    Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials 有权
    先进的半导体器件采用钝化的高铝含量III-V材料制成

    公开(公告)号:US06201264B1

    公开(公告)日:2001-03-13

    申请号:US09231411

    申请日:1999-01-14

    IPC分类号: H01L3300

    摘要: For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high-quality native oxide at the exposed surfaces of the high Al-content confining layers which protect from the formation of the ‘poor’ oxide, it is possible for LEDs to retain essentially their same light output after 2,000 hours of WHTOL testing. Further, it is possible to improve carrier confinement, carrier injection, wave guiding, and other properties by increasing the Al-content of different layers.

    摘要翻译: 对于AlGaAs LED,与活性层相邻的限制层具有最高的Al组成。 从未钝化的WHTOL老化AlGaAs LED的故障分析中,发现在高Al含量限制层的暴露表面,腐蚀发生最快。 通过将高质量的天然氧化物放置在高Al含量限制层的暴露表面,防止形成“差”氧化物,LED可以在2000小时WHTOL测试后保持基本相同的光输出 此外,通过增加不同层的Al含量,可以改善载流子限制,载流子注入,波导等特性。