公开(公告)号：US07325889B2

公开(公告)日：2008-02-05

申请号：US10727573

申请日：2003-12-05

申请人： Teiji Yamamoto ,  Kazuo Maeda

发明人： Teiji Yamamoto ,  Kazuo Maeda

IPC分类号： B62D55/21

CPC分类号： B62D55/21

摘要： In a track with a rotatable bushing which is brought into engagement with a sprocket of a track-type vehicle, it is intended that strength is enhanced rationally by link functionality sharing and by combination of such assigned functional tasks for achieving further improvements in rotatable bushing function. To this end, a track link comprises a combination of an external link and an internal link; a coupler pin hole is provided through the external link; a bushing hole is provided through the internal link, and the thickness dimension of a bushing hole formation part of the internal link is made greater than that of a coupler pin formation part of the external link.

摘要翻译： 在具有与轨道式车辆的链轮接合的可旋转衬套的轨道中，旨在通过链接功能共享和通过组合这些分配的功能任务来合理地增强强度，以实现可旋转衬套功能的进一步改进 。 为此，轨道链路包括外部链路和内部链路的组合; 通过外部连杆设置连接销孔; 通过内部连杆提供衬套孔，并且内部连杆的衬套孔形成部分的厚度尺寸大于外部连杆的联接销形成部分的厚度尺寸。

公开(公告)号：US20050221622A1

公开(公告)日：2005-10-06

申请号：US11090272

申请日：2005-03-28

申请人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C09D4/00 ,  C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/3122 ,  C09D4/00 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835

摘要： The present invention relates to a deposition method in which an insulating film that coats wirings mainly made of copper film and has low dielectric constant. Its constitution in the deposition method, where deposition gas is transformed into plasma and reaction is caused to form the insulating film having low dielectric constant, is that the deposition gas has a first silicon containing compound having cyclic siloxane bond and at least one of methyl group and methoxy group, and a second silicon containing organic compound having straight-chain siloxane bond and at least one of methyl group and methoxy group, as primary constituent gas.

摘要翻译： 本发明涉及一种沉积方法，其中涂覆主要由铜膜制成的布线并具有低介电常数的绝缘膜。 使沉积气体转化为等离子体并进行反应的沉积方法的结构形成具有低介电常数的绝缘膜，即沉积气体具有含有环状硅氧烷键的第一含硅化合物和甲基的至少一种 和甲氧基，以及具有直链硅氧烷键和甲基和甲氧基中的至少一个作为主要构成气体的第二含硅有机化合物。

公开(公告)号：US20050040708A1

公开(公告)日：2005-02-24

申请号：US10727573

申请日：2003-12-05

申请人： Teiji Yamamoto ,  Kazuo Maeda

发明人： Teiji Yamamoto ,  Kazuo Maeda

IPC分类号： B62D55/18 ,  B62D55/21 ,  E05D7/10

CPC分类号： B62D55/21

摘要： In a track with a rotatable bushing which is brought into engagement with a sprocket of a track-type vehicle, it is intended that strength is enhanced rationally by link functionality sharing and by combination of such assigned functional tasks for achieving further improvements in rotatable bushing function. To this end, a track link comprises a combination of an external link and an internal link; a coupler pin hole is provided through the external link; a bushing hole is provided through the internal link, and the thickness dimension of a bushing hole formation part of the internal link is made greater than that of a coupler pin formation part of the external link.

摘要翻译： 在具有与轨道式车辆的链轮接合的可旋转衬套的轨道中，旨在通过链接功能共享和通过组合这些分配的功能任务来合理地增强强度，以实现可旋转衬套功能的进一步改进 。 为此，轨道链路包括外部链路和内部链路的组合; 通过外部连杆设置连接销孔; 通过内部连杆提供衬套孔，并且内部连杆的衬套孔形成部分的厚度尺寸大于外部连杆的联接销形成部分的厚度尺寸。

公开(公告)号：US06479409B2

公开(公告)日：2002-11-12

申请号：US09790568

申请日：2001-02-23

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Shoji Ohgawara ,  Makoto Kurotobi

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Shoji Ohgawara ,  Makoto Kurotobi

IPC分类号： H01L2131

CPC分类号： H01L21/02115 ,  C23C16/30 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

摘要翻译： 公开了一种制造半导体器件的方法，其中通过涂覆布线形成具有低介电常数的层间绝缘膜，并且在层间绝缘膜中形成通孔或接触孔。 制造具有形成在膜形成基板21上的层间绝缘膜25与暴露布线23的半导体器件的方法包括将仅含有Si，O，C和H的硅化合物转化成等离子体气体的步骤， 使等离子体气体反应的成膜气体，从而在布线23和层间绝缘膜25之间形成含有硅（Si），氧（O），碳（C）和氢（H）的嵌段绝缘膜24。

公开(公告)号：US06336837B1

公开(公告)日：2002-01-08

申请号：US09585033

申请日：2000-06-01

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： H01K132

CPC分类号： H01K1/325 ,  H01J9/20 ,  H01J61/36 ,  H01J61/40 ,  H01K1/40

摘要： A tungsten halogen lamp comprises an arc tube of fused quartz having a sealing portion at one end with a halogen element and a rare gas enclosed and a filament coil held within the arc tube, and an infrared reflecting film is formed on the surface of the arc tube. The sealing portion seals metal foils connected to the filament coil and outer leads having one end connected to the metal foils and the other end led out of the sealing portion. The infrared reflecting film is formed on the surfaces of the outer leads and the surfaces of the metal foils, and at least a part of the surface of the sealing portion has a portion where the infrared reflecting film is not formed or a portion where at least a part of the infrared reflecting film is removed. Therefore, the oxidation of the metal foils is prevented, and a tungsten halogen lamp that has a long life and a high efficiency and is inexpensive and a method for manufacturing the same are obtained.

摘要翻译： 卤钨灯包括熔融石英的发光管，其一端具有卤素元素的密封部分和封闭的稀有气体以及保持在电弧管内的灯丝线圈，并且在电弧表面上形成红外线反射膜 管。 密封部分密封连接到丝线圈的金属箔和一端连接到金属箔的外引线，另一端从密封部分引出。 红外线反射膜形成在外引线和金属箔的表面的表面上，密封部的表面的至少一部分具有不形成红外线反射膜的部分，或至少部分至少 去除红外反射膜的一部分。 因此，能够防止金属箔的氧化，得到寿命长，效率高，廉价的卤钨灯及其制造方法。

公开(公告)号：US06239550B1

公开(公告)日：2001-05-29

申请号：US09119795

申请日：1998-07-21

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： H01K150

CPC分类号： H01K1/325 ,  H01J9/20 ,  H01J61/36 ,  H01J61/40 ,  H01K1/40

摘要： A tungsten halogen lamp comprises an arc tube of fused quartz having a sealing portion at one end with a halogen element and a rare gas enclosed and a filament coil held within the arc tube, and an infrared reflecting film is formed on the surface of the arc tube. The sealing portion seals metal foils connected to the filament coil and outer leads having one end connected to the metal foils and the other end led out of the sealing portion. The infrared reflecting film is formed on the surfaces of the outer leads and the surfaces of the metal foils, and at least a part of the surface of the sealing portion has a portion where the infrared reflecting film is not formed or a portion where at least a part of the infrared reflecting film is removed. Therefore, the oxidation of the metal foils is prevented, and a tungsten halogen lamp that has a long life and a high efficiency and is inexpensive and a method for manufacturing the same are obtained.

摘要翻译： 卤钨灯包括熔融石英的发光管，其一端具有卤素元素的密封部分和封闭的稀有气体，以及保持在电弧管内的灯丝线圈，并且在电弧表面上形成红外线反射膜 管。 密封部分密封连接到丝线圈的金属箔和一端连接到金属箔的外引线，另一端从密封部分引出。 红外线反射膜形成在外引线和金属箔的表面的表面上，密封部的表面的至少一部分具有不形成红外线反射膜的部分，或至少部分至少 去除红外反射膜的一部分。 因此，能够防止金属箔的氧化，得到寿命长，效率高，廉价的卤钨灯及其制造方法。

公开(公告)号：US5769942A

公开(公告)日：1998-06-23

申请号：US506039

申请日：1995-07-24

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： C30B25/10 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/02 ,  C30B25/14 ,  C30B25/22 ,  H01L21/205 ,  C30B23/00

CPC分类号： C30B25/22 ,  C30B29/06

摘要： This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

摘要翻译： 本发明涉及通过使用所谓的非均相反应进行外延生长的方法，包括将源材料设置在水平室的第一区域中，将生长衬底放置在其第二区域中，加热第一区域从而保持 在第一温度下加热第二区域，从而将生长衬底保持在低于第一温度的第二温度，将反应气体引入室中，从而使反应气体与源材料反应并沉积所得反应 产物在生长衬底上，从而通过外延生长获得膜的形成。

公开(公告)号：US5679165A

公开(公告)日：1997-10-21

申请号：US531908

申请日：1995-09-18

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01L21/67167 ,  C23C16/4407 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： An apparatus, for forming a film according to an automated continuous CVD (Chemical Vapor Deposition) method includes a wafer holder having a plurality of separate, detachable susceptors, a rotary shaft for rotating the wafer holder to rotate wafer mounting surfaces of the susceptors in one plane, a gas distributor spaced from the wafer holder and facing the moving surface of the wafer mounting surface to discharge a reaction gas onto the wafer mounting surfaces, and a heating instrument spaced from the wafer holder and facing the moving surface of the opposite side of the wafer mounting surfaces, in order to keep the wafer at a stable temperature during forming a film and to allow maintenance and repair to be easily and efficiently performed.

摘要翻译： 用于根据自动连续CVD（化学气相沉积）方法形成膜的装置包括具有多个分离的可拆卸基座的晶片保持器，用于旋转晶片保持器以使基座的晶片安装表面旋转的旋转轴 平面，与晶片保持器间隔开并面向晶片安装表面的移动表面的气体分配器，以将反应气体排放到晶片安装表面上;以及加热仪器，与晶片保持器间隔开并面对与晶片安装表面相对的移动表面 晶片安装表面，以便在形成膜期间将晶片保持在稳定的温度，并且允许容易且有效地进行维护和修理。

公开(公告)号：US5620523A

公开(公告)日：1997-04-15

申请号：US389791

申请日：1995-02-16

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/3211 ,  H01J37/3244

摘要： This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

摘要翻译： 本发明涉及用于形成绝缘膜的成膜装置，例如通过使用活性反应气体的CVD法。 旨在简化设备，确保高质量的膜，提高等离子体的形成效率，并提高所制膜的厚度均匀性。 成膜装置包括等离子体发生器和用于将第一反应气体排放到等离子体发生器中的第一气体放出器和用于将第二反应气体排放到基板上的第二气体放出器。 第二气体排出器包括多个气体排出管，其中形成有多个气体排出孔，由此第二反应气体从气体排出孔排出到与活化的第一反应气体接触，并且自身被激活 通过第一和第二反应气体的反应在基板上形成膜。

公开(公告)号：US5330577A

公开(公告)日：1994-07-19

申请号：US934759

申请日：1992-10-27

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/4407 ,  Y10S148/017

摘要： A semiconductor fabrication apparatus for forming a film on a wafer by a CVD method provides for easy removal of the dust generated in a film-forming chamber without reducing the uptime/downtime ratio of the equipment. The apparatus includes one or more gas dispersing devices having gas releasing surfaces for releasing a reaction gas to form a film on a wafer; one or more wafer holders having wafer mounting surfaces opposed to the plane defined by the gas releasing surface; and one or more cleaners, each having a suction port and a brush connected to the suction port, provided opposing the gas releasing surface. Either the cleaner or the gas dispersing device is moved so that the brush contacts and traverses the gas releasing surface.

摘要翻译： PCT No.PCT / JP92 / 00136 Sec。 371日期：1992年10月27日 102（e）日期1992年10月27日PCT提交1992年2月12日PCT公布。 出版物WO92 / 日期：1992年9月3日。通过CVD方法在晶片上形成膜的半导体制造装置提供了容易地去除成膜室中产生的灰尘，而不会降低设备的正常运行时间/停机时间。 该装置包括一个或多个具有用于释放反应气体以在晶片上形成膜的气体释放表面的气体分散装置; 一个或多个晶片保持器具有与由气体释放表面限定的平面相对的晶片安装表面; 以及一个或多个清洁器，每个清洁器具有与气体释放表面相对设置的吸入口和连接到吸入口的刷子。 清洁器或气体分散装置移动，使得刷接触并横穿气体释放表面。