公开(公告)号：US20070187666A1

公开(公告)日：2007-08-16

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升 装置（例如，在安装发光装置期间加热至约300℃）。 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US07875896B2

公开(公告)日：2011-01-25

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere.The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US20110297978A1

公开(公告)日：2011-12-08

申请号：US13202274

申请日：2010-01-21

申请人： Ryouichi Takeuchi ,  Noritaka Muraki

发明人： Ryouichi Takeuchi ,  Noritaka Muraki

IPC分类号： H01L33/48 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/405 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2924/00

摘要： The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, whereinthe light-emitting diode (1) includes a compound semiconductor layer (2) including a light-emitting portion (8) having a light-emitting layer (9) and a substrate (3), in which an external reflection layer (4) having a reflectivity higher than that of the substrate (3) is provided on a side surface of the substrate (3).

摘要翻译： 本发明提供了一种能够减少从封装中的LED芯片发出的光的损失的高亮度发光二极管，并且还能够提高来自封装的光提取效率，其中，发光二极管（1）包括化合物半导体 包括具有发光层（9）的发光部（8）和基板（3）的层（2），其中反射率高于基板（3）的反射率的外反射层（4） 设置在基板（3）的侧面。

公开(公告)号：US20120168717A1

公开(公告)日：2012-07-05

申请号：US13496083

申请日：2010-09-15

申请人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki ,  Ryouichi Takeuchi

发明人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki ,  Ryouichi Takeuchi

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  H01L24/45 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0

摘要翻译： 公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。 发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX1Ga1-X1）As（式中， 0＆lt; X1＆nlE; 1）和包含由组成式表示的组成式（Al x 2 Ga 1-x 2）As（0

公开(公告)号：US07947995B2

公开(公告)日：2011-05-24

申请号：US12065172

申请日：2007-11-08

申请人： Noritaka Muraki ,  Naoki Fukunaga

发明人： Noritaka Muraki ,  Naoki Fukunaga

IPC分类号： H01L33/20

CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

摘要翻译： 本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。 本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧） 层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。

公开(公告)号：US20120305890A1

公开(公告)日：2012-12-06

申请号：US13574894

申请日：2011-01-20

申请人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki

发明人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0

摘要翻译： 一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆ 配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

公开(公告)号：US07875474B2

公开(公告)日：2011-01-25

申请号：US12065564

申请日：2006-09-05

申请人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0062 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.

摘要翻译： 本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。 从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15， 层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

公开(公告)号：US20090045434A1

公开(公告)日：2009-02-19

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US08258541B2

公开(公告)日：2012-09-04

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US20120168782A1

公开(公告)日：2012-07-05

申请号：US13395817

申请日：2010-09-13

申请人： Noriyuki Aihara ,  Ryouichi Takeuchi ,  Noritaka Muraki

发明人： Noriyuki Aihara ,  Ryouichi Takeuchi ,  Noritaka Muraki

IPC分类号： H01L33/30 ,  H01L33/08

CPC分类号： H01L33/0079 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/73265

摘要： Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0≦x≦1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).

摘要翻译： 公开了一种发光二极管，其具有700nm以上的红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。 发光二极管设置有：发光部（7），其包括活性层，其中活性层发射红外光，并且包括多层，其包括由以下组成表示的阱层（12）制成的多层 （Al x Ga 1-x）As（0＆nlE; x＆nlE; 1）和阻挡层（13）的组成式。 形成在发光部（7）上的电流扩散层（8）; 和键合到电流扩散层（8）的功能基板（3）。