公开(公告)号：US20210167581A1

公开(公告)日：2021-06-03

申请号：US17172138

申请日：2021-02-10

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/22 ,  H01S5/30

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

公开(公告)号：US11942763B2

公开(公告)日：2024-03-26

申请号：US16954961

申请日：2018-12-14

Applicant: OSRAM OLED GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  B23K26/122 ,  H01S5/0237 ,  H01S5/024 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/02345

CPC classification number: H01S5/4031 ,  B23K26/122 ,  H01S5/0237 ,  H01S5/02469 ,  H01S5/02492 ,  H01S5/04254 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/02345 ,  H01S5/04256

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

公开(公告)号：US11742633B2

公开(公告)日：2023-08-29

申请号：US17172138

申请日：2021-02-10

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/22 ,  H01S5/30 ,  H01S5/02 ,  H01S5/0234

CPC classification number: H01S5/2205 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3018 ,  H01S5/0202 ,  H01S5/0234 ,  H01S5/2222 ,  H01S2301/176

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

公开(公告)号：US11626707B2

公开(公告)日：2023-04-11

申请号：US17193951

申请日：2021-03-05

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

公开(公告)号：US20210249839A1

公开(公告)日：2021-08-12

申请号：US17193951

申请日：2021-03-05

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

公开(公告)号：US11004876B2

公开(公告)日：2021-05-11

申请号：US16528307

申请日：2019-07-31

Applicant: OSRAM OLED GMBH

Inventor： Christoph Eichler ,  Andre Somers ,  Harald Koenig ,  Bernhard Stojetz ,  Andreas Loeffler ,  Alfred Lell

IPC: H01L21/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01S5/22 ,  H01L33/02 ,  H01L33/00 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/20 ,  H01S5/223 ,  H01L33/08 ,  H01L33/12

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20210111030A1

公开(公告)日：2021-04-15

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US10811582B2

公开(公告)日：2020-10-20

申请号：US15737738

申请日：2016-06-15

Applicant: OSRAM OLED GmbH

Inventor： Andreas Loeffler ,  Thomas Hager ,  Christoph Walter ,  Alfred Lell

IPC: H01L33/64 ,  H01L25/16 ,  H01L31/02 ,  H01L31/024 ,  H01L31/167 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022 ,  H01S5/024 ,  H01L31/0232 ,  H01L33/58 ,  H01S5/00

Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.

公开(公告)号：US20200295534A1

公开(公告)日：2020-09-17

申请号：US16637698

申请日：2018-08-21

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC: H01S5/042 ,  H01S5/40 ,  H01S5/323 ,  H01S5/024

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US20200227893A1

公开(公告)日：2020-07-16

申请号：US16834037

申请日：2020-03-30

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/22 ,  H01S5/30

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.