公开(公告)号：US08669467B2

公开(公告)日：2014-03-11

申请号：US12940918

申请日：2010-11-05

Applicant: Isik C. Kizilyalli ,  Melissa J. Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas G. Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa J. Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas G. Hegedus ,  Gregg Higashi

IPC: H01L31/00

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

公开(公告)号：US20130052371A1

公开(公告)日：2013-02-28

申请号：US13222881

申请日：2011-08-31

Applicant: Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

Inventor： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

IPC: C23C16/48 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

Abstract: A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.

Abstract translation: 化学气相沉积（CVD）反应器包括沉积区，衬底载体和衬垫组件。 沉积区被构造成具有正压反应物气体固定喷头引入反应气体支持薄膜CVD沉积。 衬底载体可移动地将衬底和衬垫组件支撑在沉积区内并被加热以便进行CVD工艺。 衬套组件部分地包围沉积区域的特定部分，特别是衬底载体的部分，从而包围围绕要处理的衬底的热区域，以便在该区域中保持热量，但允许气体径向向外流向周围冷却的壁 - 反应器，其具有围绕沉积区的排气口，排出废反应物气体。 衬套组件是用于固体反应副产物的水槽，而气体反应副产物在排气口处被泵出。 衬套组件可以离开固定式喷头线性移动。

公开(公告)号：US20120090548A1

公开(公告)日：2012-04-19

申请号：US13257269

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

IPC: C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

公开(公告)号：US20100229793A1

公开(公告)日：2010-09-16

申请号：US12725326

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。 淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板 并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。 每个管连接到上管和下管板的各个孔中并与其流体连通。

公开(公告)号：US20100209082A1

公开(公告)日：2010-08-19

申请号：US12725314

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/00 ,  F27B5/14

CPC classification number: C30B25/10 ,  C23C16/01 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/482 ,  C23C16/54 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784 ,  H05B3/0047

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含第一灯座和第二灯座的灯壳，以及从第一 灯架到第二个灯座。 多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 反射器可以包含金或金合金。

公开(公告)号：US20100126571A1

公开(公告)日：2010-05-27

申请号：US12605140

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00

CPC classification number: H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

公开(公告)号：US09982346B2

公开(公告)日：2018-05-29

申请号：US13222881

申请日：2011-08-31

Applicant: Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

Inventor： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48

CPC classification number: C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

Abstract: A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.

公开(公告)号：US09834860B2

公开(公告)日：2017-12-05

申请号：US12904090

申请日：2010-10-13

Applicant: Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

Inventor： Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

IPC: C30B25/16 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02

CPC classification number: C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

Abstract: Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

公开(公告)号：US09644268B2

公开(公告)日：2017-05-09

申请号：US13222984

申请日：2011-08-31

Applicant: Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

Inventor： Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

IPC: C23C16/46 ,  F27D11/12 ,  C23C16/458 ,  C23C16/48 ,  C23C16/54 ,  F27B17/00 ,  F27D11/06 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/458 ,  C23C16/483 ,  C23C16/54 ,  F27B17/0025 ,  F27D11/06 ,  F27D11/12 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67706 ,  H01L21/6776

Abstract: A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.

公开(公告)号：US09212422B2

公开(公告)日：2015-12-15

申请号：US13222840

申请日：2011-08-31

Applicant: Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

Inventor： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45519

Abstract: A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

Abstract translation: 化学气相沉积反应器具有由气流虚拟壁限定的一个或多个沉积区，在具有封闭壁的壳体内。 每个沉积区支持化学气相沉积到基底上。 由气体流形成的虚拟壁横向包围沉积区，包括来自沉积区内的反应气体的第一气流和非反应气体从沉积区的横向外侧的区域的第二气流。 第一和第二气体流量相互压力平衡以形成虚拟壁。 虚拟壁通过在每个沉积区的边界处合并气流而形成。 壳体具有排气阀，以防止压力差或压力增加，这将破坏虚拟墙体的稳定性。 在沉积区域和壳体的封闭壁之间或在气流虚拟壁外部的壳体的内部区域之间的交叉污染减少。