摘要:
An ignition cable having a resistance wire helically wound around a strength member to form a conductive core. A very thin adhesive layer is applied over the conductive core and is overlaid with a semi-conductive layer of a cross-linked thermosetting material. The cross-linked thermosetting material is extruded over the adhesive layer to form a smooth surface. A layer of insulating material and a protective jacket are applied over the insulating layer. A braid may be added intermediate the insulating layer and the jacket to increase the mechanical strength of the ignition cable.
摘要:
A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.
摘要:
Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.
摘要:
A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
摘要:
A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.
摘要:
A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要:
A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要:
An ignition cable having a layer of semi-conductive cross-linkable polyolefin extruded over a nonmetallic strength member to form a conductive core. An insulating layer is extruded over the conductive core and overlaid with a braid of glass yarn. A final layer of insulating material is applied over the braid of glass yarn to provide an external jacket. In an alternate embodiment, the braid of glass yarn is omitted.
摘要:
In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.
摘要:
Disclosed is a radiation-curable insulation composition. The composition comprises from 5% to 35%, by weight, of an ethylene-vinyl acetate copolymer, 30% to 65% of a high density polyethylene, 30% to 60% of a metal hydroxide, 0.5% to 5% of a mercaptobenzimidazole salt, 0.05% to 5% of a phenolic antioxidant, 0.05% to 5% of zinc oxide, and 0.5% to 5% of a crosslinking agent. The composition is useful for wire and cable insulation applications. It provides the wire and cable insulation with improved abrasion resistance.