公开(公告)号：US20140361852A1

公开(公告)日：2014-12-11

申请号：US14298830

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H01P1/20

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: This disclosure relates generally to radio frequency (RF) filter structures. In one embodiment, an RF filter structure includes a first resonator and a second resonator. The second resonator is operably associated with the first resonator such that an energy transfer factor between the first resonator and the second resonator is less than 10%. The first resonator includes a first inductor and a first capacitive structure electrically connected to the first inductor, while the second resonator has a second inductor and a second capacitive structure electrically connected to the second inductor. A displacement between the first inductor and the second inductor is less than or equal to half a maximum lateral width of the second inductor. To set an electric coupling coefficient, a first cross-coupling capacitive structure is electrically connected between the first resonator and the second resonator.

Abstract translation: 本公开一般涉及射频（RF）滤波器结构。 在一个实施例中，RF滤波器结构包括第一谐振器和第二谐振器。 第二谐振器可操作地与第一谐振器相关联，使得第一谐振器和第二谐振器之间的能量传递因子小于10％。 第一谐振器包括电连接到第一电感器的第一电感器和第一电容结构，而第二谐振器具有电连接到第二电感器的第二电感器和第二电容结构。 第一电感器和第二电感器之间的位移小于或等于第二电感器的最大横向宽度的一半。 为了设置电耦合系数，第一交叉耦合电容结构电连接在第一谐振器和第二谐振器之间。

公开(公告)号：US20140266470A1

公开(公告)日：2014-09-18

申请号：US14215774

申请日：2014-03-17

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Ming Tsai ,  Alireza Shirvani

IPC: H03F3/193

CPC classification number: H03F3/193 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/16 ,  H01L2223/6644 ,  H01L2224/16225 ,  H03F1/14 ,  H03F1/347 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/451

Abstract: This disclosure relates generally to radio frequency (RF) amplification devices and methods of operating the same. In one embodiment, an RF amplification device includes an RF amplification circuit and a stabilizing transformer network. The RF amplification circuit defines an RF signal path and is configured to amplify an RF signal propagating in the RF signal path. The stabilizing transformer network is operably associated with the RF signal path defined by the RF amplification circuit. Furthermore, the stabilizing transformer network is configured to reduce parasitic coupling along the RF signal path of the RF amplification circuit as the RF signal propagates in the RF signal path. In this manner, the stabilizing transformer network allows for inexpensive components to be used to reduce parasitic coupling while allowing for smaller distances along the RF signal path.

Abstract translation: 本公开一般涉及射频（RF）放大装置及其操作方法。 在一个实施例中，RF放大装置包括RF放大电路和稳定变压器网络。 RF放大电路定义RF信号路径并且被配置为放大在RF信号路径中传播的RF信号。 稳定变压器网络与由RF放大电路限定的RF信号路径可操作地相关联。 此外，稳定变压器网络被配置为当RF信号在RF信号路径中传播时减小沿着RF放大电路的RF信号路径的寄生耦合。 以这种方式，稳定变压器网络允许使用便宜的部件来减少寄生耦合，同时允许沿着RF信号路径的较小的距离。

公开(公告)号：US10062628B2

公开(公告)日：2018-08-28

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09978659B2

公开(公告)日：2018-05-22

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09966905B2

公开(公告)日：2018-05-08

申请号：US14215800

申请日：2014-03-17

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott ,  Danny W. Chang

IPC: H01F27/28 ,  H03F1/32 ,  H03F3/195 ,  H03F3/21 ,  H03F3/19 ,  H03F3/213 ,  H01F27/38 ,  H03H7/09 ,  H03H7/01 ,  H03F1/34 ,  H03F1/22

CPC classification number: H03F1/3241 ,  H01F27/28 ,  H01F27/385 ,  H03F1/22 ,  H03F1/32 ,  H03F1/34 ,  H03F3/19 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03H7/09 ,  H03H7/1775

Abstract: Radio frequency (RF) filters configured to filter undesired signal components (e.g., noise and harmonics) from RF signals are disclosed. In one embodiment, an RF filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. The second winding of the second inductor coil is configured to have a first mutual magnetic coupling with the first winding, while the third winding of the second inductor coil is configured to have a second mutual magnetic coupling with the first winding. The second winding is connected to the third winding such that the first mutual magnetic coupling and the second mutual magnetic coupling are in opposition. In this manner, the first inductor coil and the second inductor coil may be provided in a compact arrangement while providing weak mutual magnetic coupling between the first inductor coil and the second inductor coil.

公开(公告)号：US09929458B2

公开(公告)日：2018-03-27

申请号：US14931689

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H01P1/20 ,  H01P7/06 ,  H01L21/027 ,  H01L49/02 ,  H03H9/24 ,  H01P7/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: A resonator includes an inductive element and a conductive cavity surrounding the inductive element. In particular, the conductive cavity surrounds the inductive element such that a capacitance is distributed between the inductive element and the conductive cavity. By distributing a capacitance between the inductive element and the conductive cavity, a high quality-factor resonator can be achieved by the resonator with a relatively small form factor.

公开(公告)号：US09893710B2

公开(公告)日：2018-02-13

申请号：US14298834

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Baker Scott ,  George Maxim

IPC: H03H11/04 ,  H03H7/46 ,  H03H7/01 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18 ,  H03H7/09

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.

公开(公告)号：US09853340B2

公开(公告)日：2017-12-26

申请号：US14931541

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H01P9/00 ,  H01P1/203 ,  H01P3/08 ,  H01P5/02

CPC classification number: H01P1/20381 ,  H01P3/085 ,  H01P5/028 ,  H01P9/006

Abstract: The present disclosure relates to coupled slow-wave transmission lines. In this regard, a transmission line structure is provided. The transmission line structure includes a first undulating signal path formed from first loop structures. The transmission line structure also includes a second undulating signal path formed from second loop structures. The second undulating signal path is disposed alongside of the first undulating signal path. Further, a first ground structure is disposed above or below either one or both of the first undulating signal path and the second undulating signal path.

公开(公告)号：US09847564B2

公开(公告)日：2017-12-19

申请号：US14921218

申请日：2015-10-23

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H01P9/00 ,  H01P1/203 ,  H01P5/02 ,  H05K1/00 ,  H01P3/08

CPC classification number: H01P1/20381 ,  H01P3/085 ,  H01P5/028 ,  H01P9/006 ,  H05K1/00 ,  H05K1/0219 ,  H05K1/0239 ,  H05K1/0298 ,  H05K3/4611 ,  H05K2201/097

Abstract: The present disclosure relates to a slow-wave transmission line for transmitting slow-wave signals with reduced loss. In this regard, the slow-wave transmission line is formed in a multi-layer substrate and includes an undulating signal path. The undulating signal path includes at least two loop structures, wherein each loop structure includes at least two via structures connected by at least one intra-loop trace. The undulating signal path further includes at least one inter-loop trace connecting the at least two loop structures. Additionally, the slow-wave transmission line includes a first ground structure disposed along the undulating signal path. In this manner, a loop inductance is formed by each of the at least two loop structures, while a first distributed capacitance is formed between the undulating signal path and the ground structure.

公开(公告)号：US09787353B2

公开(公告)日：2017-10-10

申请号：US15099686

申请日：2016-04-15

Applicant: RF Micro Devices, Inc.

Inventor： Marcus Granger-Jones ,  Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott ,  Nadim Khlat

IPC: H04B1/48

CPC classification number: H04B1/48

Abstract: Disclosed is an RF front-end with improved insertion loss having at least a first resonator with a first port and a second port and at least a second resonator having a third port and a fourth port, wherein the first resonator and the second resonator are magnetically coupled by no more than 5%. Also included is at least one coupling structure coupled between the second port of the first resonator and the third port of the second resonator, wherein the coupling structure has a coupling control input for varying a coupling coefficient between the first resonator and the second resonator such that an RF signal transfer between the first port of the first resonator and the fourth port of the second resonator is controllably variable between 5% and 95%.