公开(公告)号：US10797040B2

公开(公告)日：2020-10-06

申请号：US16798027

申请日：2020-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hye Yeon ,  Su Hyun Jo ,  Sung Hyun Sim ,  Ha Nul Yoo ,  Yong Il Kim ,  Han Kyu Seong

IPC: H01L29/00 ,  H01L27/12 ,  H01L33/50 ,  H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L27/15

Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

公开(公告)号：US10607877B2

公开(公告)日：2020-03-31

申请号：US15869405

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Han Kyu Seong ,  Yong Il Kim ,  Sung Hyun Sim ,  Dong gun Lee

IPC: H01L21/68 ,  H01L21/683 ,  H01L23/00 ,  H01L21/67 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L21/66 ,  B23K26/00

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

公开(公告)号：US10566318B2

公开(公告)日：2020-02-18

申请号：US16008276

申请日：2018-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Hye Seok Noh ,  Han Kyu Seong ,  Sung Hyun Sim ,  Ha Nul Yoo

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L27/12 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/30 ,  H01L33/40

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

公开(公告)号：US10438994B2

公开(公告)日：2019-10-08

申请号：US15992316

申请日：2018-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Sung Hyun Sim ,  Ha Nul Yoo ,  Dong Gun Lee

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/46 ,  H01L33/22 ,  H01L33/00 ,  H01L25/16 ,  H01L33/64

Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.

公开(公告)号：US10103301B2

公开(公告)日：2018-10-16

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong Il Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00 ,  F21K9/235 ,  F21V29/76 ,  F21K9/238 ,  F21K9/232

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

公开(公告)号：US09954028B2

公开(公告)日：2018-04-24

申请号：US15449396

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Sung Hyun Sim ,  Wan Tae Lim ,  Yong Il Kim ,  Hanul Yoo

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US09287446B2

公开(公告)日：2016-03-15

申请号：US14605551

申请日：2015-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook Yoo ,  Kyung Wook Hwang ,  Yong Min Kim ,  Sung Hyun Sim

IPC: H01L33/00 ,  H01L33/18 ,  H01L33/08 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/52 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。