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    LIGHT EMITTING DEVICE
    21.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20200052175A1

    公开(公告)日：2020-02-13

    申请号：US16536819

    申请日：2019-08-09

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Min Woo KANG ,  Jong Kyu KIM ,  Hyun A KIM

    IPC: H01L33/62 ,  H01L27/15

    Abstract: A light emitting device includes a first light emitting cell, a second light emitting cell, a first conductive pattern, a second conductive pattern, and a connection pattern. The connection pattern includes contact portions electrically connected to a second conductivity type semiconductor layer of the first light emitting cell and a first conductivity type semiconductor layer of the second light emitting cell. At an edge of a first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE
    22.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开

    公开(公告)号：US20200035751A1

    公开(公告)日：2020-01-30

    申请号：US16594239

    申请日：2019-10-07

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

    IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME
    27.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
    具有分布式布拉格反射器的发光二极管芯片及其制造方法

    公开(公告)号：US20150207039A1

    公开(公告)日：2015-07-23

    申请号：US14606863

    申请日：2015-01-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE ,  Chung Hoon LEE

    IPC: H01L33/46 ,  H01L33/50 ,  H01L27/15 ,  H01L33/22 ,  H01L33/60

    CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

    Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.

    Abstract translation: 一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层 设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。 第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率， 对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。

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