公开(公告)号：US20170117430A1

公开(公告)日：2017-04-27

申请号：US15085100

申请日：2016-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/028 ,  H01L31/032

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US12166066B2

公开(公告)日：2024-12-10

申请号：US17370361

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION

Inventor： Kiyoung Lee ,  Kookrin Char ,  Byunghoon Na ,  Hahoon Lee ,  Dowon Song

IPC: H01G4/12 ,  H01G4/30 ,  H01L49/02

Abstract: A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3   wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.

公开(公告)号：US12015073B2

公开(公告)日：2024-06-18

申请号：US17984877

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  C01G35/00 ,  H10B51/00 ,  H10B53/00

CPC classification number: H01L29/516 ,  C01G23/006 ,  C01G35/006 ,  H10B51/00 ,  H10B53/00 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/77 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US11532722B2

公开(公告)日：2022-12-20

申请号：US16779863

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  H01L27/11585 ,  H01L27/11502 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US11367799B2

公开(公告)日：2022-06-21

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  H01L31/0304 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US11239274B2

公开(公告)日：2022-02-01

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Eunkyu Lee ,  Seongjun Park ,  Kiyoung Lee ,  Jinseong Heo

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264 ,  B82Y15/00

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US11222953B2

公开(公告)日：2022-01-11

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US10680066B2

公开(公告)日：2020-06-09

申请号：US14635576

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/16 ,  H01L29/778 ,  H01L33/26 ,  H01L29/267 ,  H01L29/08 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L45/00 ,  H01L31/028 ,  H01L31/113 ,  H01L29/417 ,  H01L33/04 ,  H01L33/34

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

公开(公告)号：US10079313B2

公开(公告)日：2018-09-18

申请号：US15237107

申请日：2016-08-15

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation, SUNGKYUNKWAN UNIVERSITY

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Woojong Yu ,  Yongseon Shin

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66 ,  H01L21/04 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02527 ,  H01L21/02565 ,  H01L21/042 ,  H01L29/1606 ,  H01L29/247 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693

Abstract: A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.

公开(公告)号：US09755092B2

公开(公告)日：2017-09-05

申请号：US14932701

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Seongjun Park

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0264

CPC classification number: H01L31/0352 ,  H01L31/0264 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/112 ,  H01L31/18 ,  Y02E10/547

Abstract: An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.