公开(公告)号：US20200248073A1

公开(公告)日：2020-08-06

申请号：US16851625

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyun A KANG ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG

IPC: C09K11/88 ,  C01B19/00 ,  C09K11/02

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR   Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US20200083470A1

公开(公告)日：2020-03-12

申请号：US16549472

申请日：2019-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Kwanghee KIM ,  Hongkyu SEO ,  Eun Joo JANG ,  Oul CHO ,  Tae Hyung KIM ,  Yuho WON ,  Hee Jae LEE

IPC: H01L51/50 ,  H01L51/56 ,  C09K11/06 ,  H01L51/00

Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

公开(公告)号：US20190280233A1

公开(公告)日：2019-09-12

申请号：US16298357

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Sung Woo KIM ,  Jin A KIM ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Oul CHO

IPC: H01L51/50 ,  C09K11/88 ,  H01L51/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.

公开(公告)号：US20190211261A1

公开(公告)日：2019-07-11

申请号：US16245728

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US20240250220A1

公开(公告)日：2024-07-25

申请号：US18599710

申请日：2024-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Jihyun MIN ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/70 ,  C09K11/88 ,  G02F1/1335 ,  G02F1/13357 ,  H01L21/02 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/055 ,  H01L31/105 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/504 ,  C09K11/02 ,  C09K11/025 ,  C09K11/70 ,  C09K11/883 ,  H01L21/02601 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02325 ,  H01L31/0384 ,  H01L31/055 ,  H01L31/1055 ,  H01L33/08 ,  H01L33/50 ,  H01L33/501 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/005 ,  G02B6/0053 ,  G02B6/0055 ,  G02B6/0068 ,  G02B6/0073 ,  G02F1/133614 ,  G02F1/133621 ,  G02F2202/36 ,  H01L33/06 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US20230365862A1

公开(公告)日：2023-11-16

申请号：US18354182

申请日：2023-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki KIM ,  Shin Ae JUN ,  Eun Joo JANG ,  Yongwook KIM ,  Tae Gon KIM ,  Yuho WON ,  Taekhoon KIM ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22 ,  C09K11/61 ,  C09K11/02 ,  C09K11/70 ,  C09K11/56

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/72 ,  C09K11/722 ,  C09K11/88 ,  H01L29/0665 ,  H01L29/22 ,  B82Y40/00

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide

公开(公告)号：US20230212335A1

公开(公告)日：2023-07-06

申请号：US18150672

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Norihito ISHII ,  Fumiaki KATO ,  Masashi TSUJI ,  Naotoshi SUGANUMA ,  Takahiro FUJIYAMA ,  Yusaku KONISHI ,  Eun Joo JANG ,  Ha Il KWON ,  Hyo Sook JANG ,  Soonmin CHA ,  Tae Ho KIM ,  Wonsik YOON ,  Yuho WON

IPC: C08F26/12 ,  H10K50/15 ,  H10K50/17 ,  H10K85/10

CPC classification number: C08F26/12 ,  H10K50/15 ,  H10K50/17 ,  H10K85/146

Abstract: As a technology capable of improving the durability of an electroluminescent device, for example, luminescence lifespan, a polymeric compound including a structural unit represented by Chemical Formula 1, or a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and an electroluminescent device material or electroluminescent device including the same are provided:




In Chemical Formula 1 and Chemical Formula 2, R11 to R14 are not the same as R41 to R44.

公开(公告)号：US20230212334A1

公开(公告)日：2023-07-06

申请号：US18150337

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Takahiro FUJIYAMA ,  Norihito ISHII ,  Fumiaki KATO ,  Masashi TSUJI ,  Naotoshi SUGANUMA ,  Yusaku KONISHI ,  Eun Joo JANG ,  Ha Il KWON ,  Hyo Sook JANG ,  Soonmin CHA ,  Tae Ho KIM ,  Wonsik YOON ,  Yuho WON

IPC: C08F26/02 ,  C08F28/06 ,  H10K85/10 ,  H10K50/15 ,  H10K50/17

CPC classification number: C08F26/02 ,  C08F28/06 ,  H10K85/111 ,  H10K85/113 ,  H10K50/15 ,  H10K50/17 ,  H10K2102/331

Abstract: A polymer including a structural unit represented by Chemical Formula 1, an electroluminescence device material including the polymer, an electroluminescence device including the polymer or the electroluminescence device material, and an electronic device including the electroluminescence device are provided:




In Chemical Formula 1, the definition of each substituent is the same as described in the specification.

公开(公告)号：US20230180498A1

公开(公告)日：2023-06-08

申请号：US18101603

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: H10K50/115

CPC classification number: H10K50/115

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US20220243125A1

公开(公告)日：2022-08-04

申请号：US17726702

申请日：2022-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.