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公开(公告)号：US5962347A
公开(公告)日：1999-10-05
申请号：US188371
申请日：1998-11-10
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/70 , H01L21/768 , H01L21/77 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/76802
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
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公开(公告)号：US5705029A
公开(公告)日：1998-01-06
申请号：US457748
申请日：1995-06-01
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/32136 , H01L21/32137
摘要： Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
摘要翻译： 通过将制品保持在蚀刻气体分子的蒸气压变得等于或高于蚀刻气体的压力并且等离子体中包含的中性基团的蒸气压变为等于或等于其的温度来进行制品的蚀刻 比蚀刻气体的压力高。 可以以高精度形成具有基本上垂直的侧面轮廓并且从掩模的尺寸偏移极小的蚀刻图案。
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公开(公告)号：US4599135A
公开(公告)日：1986-07-08
申请号：US655438
申请日：1984-09-28
CPC分类号： C23C16/402 , C23C16/452
摘要： In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.
摘要翻译： 在薄膜沉积装置中，在反应容器中彼此独立地设置有用于在基板上沉积膜的装置和用于蚀刻沉积膜以使其表面平坦的装置。 该装置可以快速沉积薄膜，而不会过度地升高基板的温度。 此外，由于沉积装置和蚀刻装置彼此独立，因此可以在各种条件下实现膜在基板上的沉积和沉积膜的表面的平坦化。
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公开(公告)号：US4563240A
公开(公告)日：1986-01-07
申请号：US636997
申请日：1984-08-02
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01J37/32192 , H01J37/32082 , H01L21/3065 , H01L21/32136 , H01L21/32137 , H01J2237/3348
摘要： The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.
摘要翻译： 本发明涉及一种等离子体工艺的方法和装置，其中相同的样品在具有射频等离子体产生装置和微波等离子体产生装置的等离子体处理装置中通过利用射频等离子体 射频等离子体产生装置和微波等离子体产生装置中的微波等离子体。 因此可以提高等离子体处理速率，并且还可以降低由于等离子体中的离子造成的电损伤，从而在半导体集成电路元件的制造期间确保高产量和高质量。
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公开(公告)号：USRE39895E1
公开(公告)日：2007-10-23
申请号：US10094157
申请日：2002-03-08
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L21/00
CPC分类号： H01L21/76802 , H01L21/31116
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。
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公开(公告)号：US06074958A
公开(公告)日：2000-06-13
申请号：US339041
申请日：1999-06-23
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/70 , H01L21/768 , H01L21/77 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/76802
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。
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公开(公告)号：US5874013A
公开(公告)日：1999-02-23
申请号：US857167
申请日：1997-05-15
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/70 , H01L21/768 , H01L21/77 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31116 , H01L21/76802
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.
摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用，并且选择性地获得所需的解离物种。
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公开(公告)号：US5643473A
公开(公告)日：1997-07-01
申请号：US453336
申请日：1995-05-30
IPC分类号： H01L21/311 , H01L21/3213 , H05H1/00 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.
摘要翻译： 公开了一种干蚀刻方法，其中设置反应室中的蚀刻气体的压力，施加到待蚀刻的制品的偏压和被蚀刻物体的温度，使得制品的蚀刻速率 被蚀刻的厚度大于0.2μm/ min，待蚀刻制品中的侧蚀刻长度与蚀刻深度的比值小于+ E，fra 1/100 + EE，蚀刻比 要蚀刻的制品的速率对于其上形成的掩模的蚀刻速率大于10.因此，干蚀刻方法可以满足三个要求（即蚀刻速率高，选择率高，蚀刻中具有显着的各向异性） 同时，尽管传统的干蚀刻方法只能满足三个要求中的两个。
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公开(公告)号：US5127987A
公开(公告)日：1992-07-07
申请号：US607314
申请日：1990-10-31
IPC分类号： C23C16/50 , C23F4/00 , G03F7/36 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/36 , Y10S438/907
摘要： A plurality of resist membranes are formed on a membrane of goods to be etched. The top resist is patterned by light beam, laser beam, X-rays, or electron beams. The wafer is transferred to a first unit into which discharging gas is introduced and plasma is generated in order to dry-etch the multilayer resists. The multilayer is transferred to a second unit in vacuum environment. In the second unit, the membrane of the wafer is dry-etched in a predetermined depth. The wafer then is transferred to a third unit in vacuum atmosphere so as to remove part of the resist depending a mask pattern and treat the resist by plasma.
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公开(公告)号：US5354416A
公开(公告)日：1994-10-11
申请号：US503124
申请日：1990-04-02
IPC分类号： H01L21/3065 , H01L21/3213 , H05H1/00
CPC分类号： H01L21/32135 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
摘要翻译： 通过将制品保持在蚀刻气体分子的蒸气压变得等于或高于蚀刻气体的压力并且等离子体中包含的中性基团的蒸气压变为等于或等于其的温度来进行制品的蚀刻 比蚀刻气体的压力高。 可以以高精度形成具有基本上垂直的侧面轮廓并且从掩模的尺寸偏移极小的蚀刻图案。
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