公开(公告)号：US06268658B1

公开(公告)日：2001-07-31

申请号：US09500242

申请日：2000-02-08

Applicant: Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

Inventor： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

IPC: H01L2348

CPC classification number: H01L29/7845 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.

Abstract translation: 半导体器件包括硅衬底，电布线金属，形成在硅衬底上的绝缘膜，形成在用于将硅衬底和电布线金属彼此连接的绝缘膜中的多个接触孔，以及硅化钛 膜在接触孔中形成。 硅化钛膜的厚度为10nm〜120nm，优选为20nm〜84nm。 半导体区域和电布线金属通过硅化钛膜彼此连接。

公开(公告)号：US5408336A

公开(公告)日：1995-04-18

申请号：US823474

申请日：1992-01-22

Applicant: Shinichi Ishida

Inventor： Shinichi Ishida

IPC: H04N1/387 ,  G06T5/30 ,  H04N1/409 ,  H04N1/40

CPC classification number: H04N1/409

Abstract: There is disclosed an image processing apparatus capable of smoothing the image in obtaining a binary image, by eliminating notches through comparison of the input image data with certain notch image patterns stored in the apparatus in advance. In order to maintain an effect of smoothing even when the resolution of the input image data is increased, the image patterns employed for the above-mentioned comparison are varied according to the resolution of the input image data.

Abstract translation: 公开了一种图像处理装置，其能够通过将输入图像数据与预先存储在装置中的某些凹口图像图案进行比较来消除凹陷来消除获得二值图像的图像。 即使输入图像数据的分辨率增加，为了保持平滑的效果，用于上述比较的图像图案根据输入图像数据的分辨率而变化。

公开(公告)号：US09286062B2

公开(公告)日：2016-03-15

申请号：US14391377

申请日：2013-04-05

Applicant: Shinichi Ishida ,  Tsutomu Matsuzaki ,  I-SYSTEM CO., LTD.

Inventor： Shinichi Ishida

IPC: G06F9/45 ,  G06F9/44 ,  G06F11/36

CPC classification number: G06F8/75 ,  G06F11/3604

Abstract: A structure analysis device comprises a storage means wherein modules are stored, and an analysis means for carrying out a structural analysis of a prescribed subject module of the modules which are stored in the storage means. If a hierarchical structure of a first subject range and a hierarchical structure of a second subject range of the subject module are the same, the analysis means creates similarity notification information in association with the first subject range and/or the second subject range. The first subject range and the second subject range are respectively different subject ranges of the subject ranges of the subject modules which are acquired from the storage means. The similarity notification information denotes that respectively similar subject ranges are present in the subject module.

Abstract translation: 结构分析装置包括存储模块的存储装置和用于对存储在存储装置中的模块的规定主体模块进行结构分析的分析装置。 如果对象模块的第一对象范围和第二对象范围的分层结构的分层结构相同，则分析装置与第一对象范围和/或第二对象范围相关联地创建相似性通知信息。 第一被摄体范围和第二被摄体范围分别是从存储装置获取的被摄体模块的被摄体范围的不同的被摄体范围。 相似性通知信息表示在对象模块中存在相应的相似的对象范围。

公开(公告)号：US08350311B2

公开(公告)日：2013-01-08

申请号：US12975406

申请日：2010-12-22

Applicant: Yoshiyuki Kaneko ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

Inventor： Yoshiyuki Kaneko ,  Hiroyasu Noso ,  Katsuhiko Hotta ,  Shinichi Ishida ,  Hidenori Suzuki ,  Sadayoshi Tateishi

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L21/7684 ,  H01L21/76804 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).

Abstract translation: 本发明提供了能够提供具有提高的可靠性的具有MIM结构电容器的半导体器件的技术。 电容器具有下电极，电容器绝缘膜和上电极。 下部电极由在半导体衬底的主表面上形成绝缘膜的电极槽中嵌入的金属膜构成; 上电极由TiN膜（下金属膜）和形成在TiN膜（下金属膜）上的Ti膜（帽金属膜）的膜叠层构成。

公开(公告)号：US07919929B2

公开(公告)日：2011-04-05

申请号：US12233499

申请日：2008-09-18

Applicant: Hirofumi Honda ,  Shinichi Ishida ,  Tatsuya Sakurai

Inventor： Hirofumi Honda ,  Shinichi Ishida ,  Tatsuya Sakurai

IPC: H05B41/16

CPC classification number: H05B41/2855

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit whereby a protection operation is performed.

Abstract translation: 在一个方面，在高频区域呈现高阻抗的阻抗分量布置在形成在变压器次级侧的高压线上。 在阻抗分量的两端产生的电位差用于检测在高压线路中产生的异常放电。 当检测到异常放电时，通过控制电路停止切换操作，由此执行保护操作。

公开(公告)号：US07806431B2

公开(公告)日：2010-10-05

申请号：US12230347

申请日：2008-08-28

Applicant: Ikuo Yamada ,  Shinichi Ishida ,  Yasushi Okada ,  Tsuyoshi Furuno

Inventor： Ikuo Yamada ,  Shinichi Ishida ,  Yasushi Okada ,  Tsuyoshi Furuno

IPC: B60R21/231 ,  B60R21/235

CPC classification number: B60R21/231 ,  B60R21/2346 ,  B60R21/239 ,  B60R2021/23324

Abstract: An airbag for a front passenger's seat includes a left outer panel, right outer panel, left inner panel and right inner panel. The left and right outer panels are prepared as laterally symmetrical separate entities. Each of the left and right inner panels includes at the upper front end at full inflation a crossing edge that extends in a transverse direction on the airbag at full inflation. Each of the left and right outer panels includes at the upper periphery a central extended region that includes a joint edge for joint with the crossing edge of each of the inner panels. The central extended regions of the left and right outer panels are coupled together at their circumferences except the joint edges.

Abstract translation: 用于前乘客座椅的气囊包括左外板，右外板，左内板和右内板。 左右外板准备为横向对称的独立实体。 左和右内板中的每一个在完全充气的上前端包括在充气充气时在气囊上沿横向方向延伸的交叉边缘。 左和右外板中的每一个在上周边包括一个中心延伸区域，该中心延伸区域包括用于与每个内板的交叉边缘接合的接合边缘。 左右外板的中心延伸区域除了接头边缘之外围绕其周边连接在一起。

公开(公告)号：US20070069661A1

公开(公告)日：2007-03-29

申请号：US11521867

申请日：2006-09-15

Applicant: Hirofumi Honda ,  Shinichi Ishida ,  Tatsuya Sakurai

Inventor： Hirofumi Honda ,  Shinichi Ishida ,  Tatsuya Sakurai

IPC: H05B41/16

CPC classification number: H05B41/2855

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit, whereby a protection operation is performed.

Abstract translation: 在一个方面，在高频区域呈现高阻抗的阻抗分量布置在形成在变压器次级侧的高压线上。 在阻抗分量的两端产生的电位差用于检测在高压线路中产生的异常放电。 当检测到异常放电时，通过控制电路停止切换操作，从而进行保护操作。

公开(公告)号：US06300237B1

公开(公告)日：2001-10-09

申请号：US09245743

申请日：1999-02-08

Applicant: Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

Inventor： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC: H01L214763

CPC classification number: H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract translation: 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。

公开(公告)号：US6031288A

公开(公告)日：2000-02-29

申请号：US747392

申请日：1996-11-12

Applicant: Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

Inventor： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L23/522 ,  H01L27/108 ,  H01L23/48

CPC classification number: H01L29/7845 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002

Abstract: A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.

Abstract translation: 半导体器件包括硅衬底，电布线金属，形成在硅衬底上的绝缘膜，形成在用于将硅衬底和电布线金属彼此连接的绝缘膜中的多个接触孔，以及硅化钛 膜在接触孔中形成。 硅化钛膜的厚度为10nm〜120nm，优选为20nm〜84nm。 半导体区域和电布线金属通过硅化钛膜彼此连接。

公开(公告)号：US5904556A

公开(公告)日：1999-05-18

申请号：US584065

申请日：1996-01-11

Applicant: Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

Inventor： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract translation: 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。