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21.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 有权使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US06706648B2
公开(公告)日：2004-03-16
申请号：US10037865
申请日：2001-10-24
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属被改善。
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公开(公告)号：US06228751B1
公开(公告)日：2001-05-08
申请号：US08706667
申请日：1996-09-06
IPC分类号： H01L27108
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。
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公开(公告)号：US5036794A
公开(公告)日：1991-08-06
申请号：US498474
申请日：1990-03-23
IPC分类号： H01L31/04 , C23C16/458 , C23C16/54 , H01L21/205 , H01L21/31
CPC分类号： H01L21/02532 , C23C16/4587 , C23C16/54 , H01L21/0262
摘要： A CVD apparatus in which a reaction chamber includes a pair of electrodes which define a plasma generating space therebetween. A metallic enclosure surrounds the plasma generating space thereby preventing plasma which has been produced within the space from escaping. The enclosure can be utilized to support one or more substrates to be coated.
摘要翻译： 一种CVD装置，其中反应室包括在其间限定等离子体产生空间的一对电极。 金属外壳围绕等离子体产生空间，从而防止在空间内产生的等离子体逸出。 外壳可用于支撑待涂覆的一个或多个基底。
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公开(公告)号：US07393723B2
公开(公告)日：2008-07-01
申请号：US10793909
申请日：2004-03-08
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。
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公开(公告)号：US06703264B2
公开(公告)日：2004-03-09
申请号：US09852063
申请日：2001-05-08
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
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26.发明授权Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译： 在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。 以这种方式，形成与不透明电极图案相邻的透明电极的图案。 在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。
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公开(公告)号：US5091638A
公开(公告)日：1992-02-25
申请号：US554342
申请日：1990-07-19
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.
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28.发明授权Glass substrate assembly, semiconductor device and method of heat-treating glass substrate 有权玻璃基板组件，半导体器件和玻璃基板的热处理方法公开(公告)号：US06268631B1
公开(公告)日：2001-07-31
申请号：US09294338
申请日：1999-04-20
IPC分类号： H01L2101
CPC分类号： C03C17/3482 , C03B25/00 , C03B32/00 , C03C17/001 , C03C17/22 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2218/32 , Y02P40/57
摘要： Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
摘要翻译： 改进的玻璃基板的热处理方法，特别是在其应变点周围或之上热处理基板（例如膜的形成，膜的生长和氧化）的情况。 如果在基板上形成产生热量的装置，则能够很好地散热。 在基板的至少一个表面上形成氮化铝膜。 该氮化铝膜用作散热器，并且防止由诸如形成在玻璃基板表面上的TFT的器件产生的局部热量。
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29.发明授权
公开(公告)号：US5929487A
公开(公告)日：1999-07-27
申请号：US462773
申请日：1995-06-05
IPC分类号： C23C16/34 , C03B25/00 , C03B32/00 , C03C17/00 , C03C17/22 , C03C17/34 , H01L21/324 , H01L29/78 , H01L29/786 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： C03C17/3482 , C03B25/00 , C03B32/00 , C03C17/001 , C03C17/22 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2218/32 , Y02P40/57
摘要： Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
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公开(公告)号：US4943710A
公开(公告)日：1990-07-24
申请号：US211225
申请日：1988-06-22
申请人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
发明人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
IPC分类号： G06K7/10 , H01L27/146 , H01L31/105 , H04N5/228 , H04N5/369
CPC分类号： G06K7/10841 , H01L27/14643 , H01L31/1055 , H04N3/1581 , Y10S148/092
摘要： This invention relates to an image sensor and manufacturing method for the same.
摘要翻译： 本发明涉及一种图像传感器及其制造方法。
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