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21.发明申请Method for carrying out an electrochemical measurement on a liquid measuring sample in a measuring chamber that can be accessed by lines, and corresponding arrangement 有权在可以通过线路访问的测量室中的液体测量样品上进行电化学测量的方法和相应的布置公开(公告)号：US20090136922A1
公开(公告)日：2009-05-28
申请号：US11665331
申请日：2005-10-17
申请人： Heike Barlag , Siegfried Birkle , Walter Gumbrecht , Daniela Kuhn , Peter Paulicka , Manfred Stanzel
发明人： Heike Barlag , Siegfried Birkle , Walter Gumbrecht , Daniela Kuhn , Peter Paulicka , Manfred Stanzel
CPC分类号： B01L3/5027 , B01L3/502707 , B01L3/502723 , Y10T436/11 , Y10T436/25 , Y10T436/2575
摘要： Especially in order to carry out the so-called enzyme-coupled DNA hybridisation test in a closed cartridge including a microfluid system, using stored dry reagents, the reagents must be dissolved in the microfluid system and transported into the measuring chamber directly before the measurement. During the dissolution of the reagents in water, air cushions that cannot reach the measuring chamber must absolutely be prevented from forming upstream of the reagent liquid. According to an embodiment of the invention, the liquid measuring sample and the liquid reagents are transported in such a way that the air cushion is directed into the waste line and the measuring sample and the reagents are then introduced into the measuring chamber without any air bubbles. In this way, measuring errors can be avoided.
摘要翻译： 特别是为了在包括微流体系统的封闭式筒体中进行所谓的酶偶联DNA杂交试验，使用储存的干试剂，试剂必须溶解在微流体系统中，并在测量前直接输送到测量室中。 在将试剂溶解在水中时，必须绝对防止不能到达测量室的气垫在试剂液体的上游形成。 根据本发明的一个实施例，液体测量样品和液体试剂以这样一种方式运输，使得气垫被引导到废液管线中，然后将测量样品和试剂引入测量室，而没有任何气泡 。 这样可以避免测量误差。
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公开(公告)号：US5648195A
公开(公告)日：1997-07-15
申请号：US571879
申请日：1995-01-05
CPC分类号： G03F7/0045 , C09D135/06
摘要： A radiation-sensitive resist composition for manufacturing highly resolved relief structures is characterized by the following components:a film-forming base polymer;a radiation-active component that releases an acid when irradiated;a radiation-sensitive ester-former; anda solvent.
摘要翻译： PCT No.PCT / DE94 / 00740 Sec。 371日期1996年1月5日 102（e）日期1996年1月5日PCT Filed 1994年6月28日PCT公布。 公开号WO95 / 02851 日期1995年1月26日用于制造高分辨浮雕结构的辐射敏感抗蚀剂组合物的特征在于以下组分：成膜基础聚合物; 辐射活性成分，当照射时释放酸; 辐射敏感的酯形成剂; 和溶剂。
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23.发明授权Multilayer printed circuit boards and multichip-module substrates, with layers of amorphous hydrogenated carbon 失效多层印刷电路板和多芯片模块基板，具有无定形氢化碳层
公开(公告)号：US5601902A
公开(公告)日：1997-02-11
申请号：US443298
申请日：1995-05-17
IPC分类号： C08J7/00 , C23C16/26 , C23C16/50 , H01L23/12 , H01L23/14 , H05K1/03 , H05K3/38 , H05K3/46 , B32B9/00
CPC分类号： H05K3/388 , H01L23/145 , H01L2924/0002 , Y10S428/901 , Y10T428/24917
摘要： Multilayer printed circuit boards and multichip-module substrates having at least one layered composite of high-temperature-stable plastic and conductive tracks wherein the plastic is provided with a thin layer of amorphous, hydrogenated carbon (a--C:H) having a water permeation coefficient of
摘要翻译： 多层印刷电路板和具有至少一层高温稳定塑料和导电轨迹层状复合材料的多芯片模块基板，其中塑料具有薄层的无定形氢化碳（aC：H），其具有水透过系数 <1.1×10-13 m2 / s。 a-C：H层也具有硬度梯度。
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公开(公告)号：US5234794A
公开(公告)日：1993-08-10
申请号：US847881
申请日：1992-03-10
申请人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
发明人： Michael Sebald , Rainer Leuschner , Recai Sezi , Siegfried Birkle , Hellmut Ahne
IPC分类号： G03F7/40
摘要： A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.
摘要翻译： 提供了一种用于将光致抗蚀剂结构中的沟槽宽度减小到分辨率极限以下的简单方法。 制备光致抗蚀剂结构并用试剂处理，然后含有与光致抗蚀剂结构的官能团反应的凸起成分。 凸起成分导致光致抗蚀剂结构的体积增加。 通过改变各种参数可以控制光致抗蚀剂结构体积增加的程度。
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25.发明授权Device for transporting bulk material comprising a vibrator conveyor which dips into a liquid 失效用于运输包裹在液体中的振动输送机的散装材料的装置
公开(公告)号：US5215641A
公开(公告)日：1993-06-01
申请号：US752674
申请日：1991-11-06
CPC分类号： C25D17/28 , B65G49/0427 , C23G3/00
摘要： The conveying trough of the vibrator conveyor is disposed spirally around a central pipe and is surrounded by a gasproof vessel. This vessel contains a treatment medium, preferably an electrolyte free of oxygen and water, into which the vibrator conveyor with thee central pipe dips partially. According to the invention, a gas cushion (10) is provided between the bottom (3) or the cover (4) of the central pipe (2) and the bottom (8) of the vessel (6). In this form of realization bulk material can be transported over great differences in height.
摘要翻译： PCT No.PCT / EP90 / 00295 Sec。 371日期1991年11月6日 102（e）日期1991年11月6日PCT 1990年2月21日PCT PCT。 出版物WO90 / 10739 1990年9月20日。振动输送机的输送槽螺旋地设置在中心管周围，被气体容器包围。 该容器含有处理介质，优选不含氧和水的电解质，其中中心管的振动器输送器部分地浸入其中。 根据本发明，气垫（10）设置在中心管（2）的底部（3）或盖（4）和容器（6）的底部（8）之间。 在这种形式的实现中，散装材料可以运输高度差异很大。
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公开(公告)号：US5206534A
公开(公告)日：1993-04-27
申请号：US747695
申请日：1991-08-20
IPC分类号： H01L31/0376 , H01L31/074 , H01L31/20
CPC分类号： H01L31/074 , H01L31/03762 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： In the case of a photocell based on gallium arsenide or indium phosphide, a layer of amorphous, hydrogenous carbon (a-C:H) having a thickness of .ltoreq.0.1 .mu.m and a specific electrical resistance of .gtoreq.10.sup.6 .OMEGA..cm is placed on a layer of p-doped gallium arsenide (GaAs) or indium phosphide (InP).
摘要翻译： 在基于砷化镓或磷化铟的光电池的情况下，厚度为0.1μm，比电阻≥106欧姆·厘米的无定形氢碳（aC：H）层为 放置在p掺杂砷化镓（GaAs）或磷化铟（InP）层上。
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公开(公告)号：US5196907A
公开(公告)日：1993-03-23
申请号：US924422
申请日：1992-07-31
IPC分类号： H01L21/04 , H01L21/28 , H01L21/314 , H01L29/51
CPC分类号： H01L21/28264 , H01L21/044 , H01L21/28167 , H01L21/3146 , H01L29/51 , H01L21/28194
摘要： A Metal Insulator Semiconductor Field-Effect Transistor (MISFET) has an insulating layer arranged between a gate electrode and a semiconductor substrate. The insulating layer is a layer of amorphous, hydrogenated carbon (a-C:H) with a thickness--in the region of the gate electrode--of up to 1 .mu.m, and with a resistivity (.eta.) greater than or equal to 10.sup.6 .OMEGA..multidot.cm at the boundary surface to the semiconductor substrate. The semiconductor substrate consists of a semiconductor material other than silicon.
摘要翻译： 金属绝缘体半导体场效应晶体管（MISFET）具有布置在栅电极和半导体衬底之间的绝缘层。 绝缘层是一层非晶氢化碳（aC：H），其厚度在栅电极的区域至多为1μm，电阻率（eta）大于或等于106欧米伽xcm 在与半导体基板的边界面。 半导体衬底由除硅之外的半导体材料组成。
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公开(公告)号：US5131996A
公开(公告)日：1992-07-21
申请号：US623213
申请日：1990-12-06
申请人： Siegfried Birkle , Johann Gehring
发明人： Siegfried Birkle , Johann Gehring
CPC分类号： C25D17/22 , C23G3/00 , Y10S209/92
摘要： An apparatus is provided for surface treating agitable material that includes a conveyor trough for transporting the agitatable material. The trough is at least partially submerged in a treatment bath and it includes at least a first and second shaking chute each having a length along which the material is conveyed. The first and second chutes are disposed at angles from the horizontal such that the conveying direction of the first chute is substantially opposite to the conveying direction of the second chute.
摘要翻译： 提供了一种用于表面处理可消耗材料的装置，其包括用于输送可搅拌材料的输送槽。 槽至少部分地浸没在处理槽中，并且其至少包括第一和第二振动槽，每个具有材料沿其输送的长度。 第一和第二滑槽与水平面成角度设置，使得第一滑槽的输送方向基本上与第二滑槽的输送方向相反。
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29.发明授权
公开(公告)号：US5055421A
公开(公告)日：1991-10-08
申请号：US458716
申请日：1990-02-05
IPC分类号： B01J19/08 , C23C16/00 , C23C16/26 , H01L21/205 , H01L21/365 , H01L29/16
CPC分类号： H01L21/02527 , C23C16/26 , H01L21/02592 , H01L21/0262 , H01L29/1604
摘要： The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm.sup.2.v.sup.-1.s.sup.-1.
摘要翻译： PCT No.PCT / EP88 / 00526 Sec。 371 1990年2月5日第 102（e）日期1990年2月5日PCT提交1988年6月14日PCT公布。 出版物WO89 / 01237 日期：1989年2月9日。本发明提供了一种制备新的半导体基材的方法，该半导体基材包含非晶态氢（ac：H）薄层，其电阻介于101和108欧姆计之间，电荷载流子浓度 （n + p）分别为1010至1018cm-3。 新的半导体基底材料可以通过应用带状工艺在薄层技术中制造并且表现出至少1cm2.v-1.s-1的载流子迁移率。
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公开(公告)号：US4395481A
公开(公告)日：1983-07-26
申请号：US305798
申请日：1981-09-25
IPC分类号： C08F220/10 , C08F222/32 , G03F7/038 , G03F7/039 , G03F7/20 , G05F1/577 , G03C5/00
摘要： The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.
摘要翻译： 本发明涉及通过短波紫外线制造正型抗蚀剂结构的方法，其目的是以增加灵敏度和分辨率以及高热稳定性的方式开发这种方法，另外， 可以实现260nm以上的波长范围的透明度。 根据本发明，为此目的提供了使用1至70摩尔％甲基丙烯酸烷基酯与具有1-4个碳原子的烷基的抗蚀剂材料共聚物和99至30摩尔％的具有氯的烯属不饱和单体的抗蚀剂材料共聚物，以及 /或青色取代基。 根据本发明的方法特别适用于通过在约180至260nm之间的波长范围内的紫外线生产约0.5至2μm厚的抗蚀剂结构。
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