公开(公告)号：US20150229107A1

公开(公告)日：2015-08-13

申请号：US14312427

申请日：2014-06-23

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

IPC: H01S5/40 ,  H01S5/30 ,  H01S5/02

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US11011889B2

公开(公告)日：2021-05-18

申请号：US16791652

申请日：2020-02-14

Applicant: Soraa Laser Diode, Inc.

Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

IPC: H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042 ,  H01S5/00

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

公开(公告)号：US10854778B1

公开(公告)日：2020-12-01

申请号：US16835082

申请日：2020-03-30

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L33/00 ,  H01L29/205 ,  H01L23/00 ,  H01L29/66 ,  H01S5/02 ,  H01L21/683 ,  H01S5/227 ,  H01L27/12 ,  H01L27/06 ,  H01L33/32 ,  H01L27/088 ,  H01L29/20 ,  H01L27/15 ,  H01L33/06 ,  H01L21/311 ,  H01S5/343 ,  H01L21/02

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US20200274333A1

公开(公告)日：2020-08-27

申请号：US16791652

申请日：2020-02-14

Applicant: Soraa Laser Diode, Inc.

Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

IPC: H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

公开(公告)号：US10749315B2

公开(公告)日：2020-08-18

申请号：US15820160

申请日：2017-11-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/22

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US20200244046A1

公开(公告)日：2020-07-30

申请号：US16844299

申请日：2020-04-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/02 ,  H01L23/00 ,  H01S5/323 ,  H01L33/00

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US10720757B1

公开(公告)日：2020-07-21

申请号：US16217359

申请日：2018-12-12

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

公开(公告)号：US10439365B1

公开(公告)日：2019-10-08

申请号：US16380163

申请日：2019-04-10

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/042 ,  H01S5/30

Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

公开(公告)号：US10002928B1

公开(公告)日：2018-06-19

申请号：US15480239

申请日：2017-04-05

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01L29/205 ,  H01L33/00 ,  H01L33/06 ,  H01L29/66 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01L27/06 ,  H01L21/02 ,  H01L21/683 ,  H01L21/311 ,  H01S5/343 ,  H01S5/227 ,  H01S5/02

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/311 ,  H01L21/6835 ,  H01L21/8252 ,  H01L21/8258 ,  H01L24/00 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/085 ,  H01L27/088 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L29/7786 ,  H01L29/8613 ,  H01L29/872 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/95 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/227 ,  H01S5/34333

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US20180013265A1

公开(公告)日：2018-01-11

申请号：US15694641

申请日：2017-09-01

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/02 ,  H01S5/32 ,  H01S5/40 ,  H01S5/022 ,  H01S5/00

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.