Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications
    21.
    发明授权
    Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications 有权
    在用于图案化盘式介质应用的等离子体离子注入工艺期间对衬底的温度控制

    公开(公告)号:US08586952B2

    公开(公告)日:2013-11-19

    申请号:US12916600

    申请日:2010-10-31

    CPC classification number: G11B5/855 B82Y10/00 G11B5/746 H01J37/32412

    Abstract: Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.

    Abstract translation: 本发明的实施例提供了一种在等离子体离子注入工艺期间减少热能积聚的方法,用于在衬底上的磁敏表面上形成包括磁性和非磁性畴的图案。 在一个实施例中,在等离子体离子注入过程期间控制衬底温度的方法包括(a)在处理室中在其上形成有敏感层的衬底上执行等离子体离子注入工艺的第一部分第一时间段 ,其中所述衬底的温度保持在约150摄氏度以下,(b)在所述等离子体离子注入工艺的所述第一部分完成之后冷却所述衬底的温度,以及(c)执行所述等离子体离子的第二部分 在衬底上的注入工艺,其中衬底的温度保持在150摄氏度以下。

    SYSTEM FOR BATCH PROCESSING OF MAGNETIC MEDIA
    24.
    发明申请
    SYSTEM FOR BATCH PROCESSING OF MAGNETIC MEDIA 有权
    磁介质批处理系统

    公开(公告)号:US20110163065A1

    公开(公告)日:2011-07-07

    申请号:US12984528

    申请日:2011-01-04

    Abstract: A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier.

    Abstract translation: 提供了一种用于同时处理多个基板的方法和装置。 每个基底可以具有待处理的两个主要活性表面。 该装置具有基板处理模块和基板处理模块。 基板处理模块具有加载器组件,导板组件和工厂接口。 衬底在装载机组件上设置在衬底载体上。 在需要双面处理的情况下,导板组件用于翻转衬底载体上的所有衬底。 工厂接口定位用于保持进入和离开基板处理模块的基板的基板载体。 衬底处理模块包括负载锁定,传送室和多个处理室,每个处理室被配置为处理设置在衬底载体上的多个衬底。

    TEMPERATURE CONTROL OF A SUBSTRATE DURING A PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS
    25.
    发明申请
    TEMPERATURE CONTROL OF A SUBSTRATE DURING A PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS 有权
    用于图形盘介质应用的等离子体离子植入过程中的基板的温度控制

    公开(公告)号:US20110101247A1

    公开(公告)日:2011-05-05

    申请号:US12916600

    申请日:2010-10-31

    CPC classification number: G11B5/855 B82Y10/00 G11B5/746 H01J37/32412

    Abstract: Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.

    Abstract translation: 本发明的实施例提供了一种在等离子体离子注入工艺期间减少热能积聚的方法,用于在衬底上的磁敏表面上形成包括磁性和非磁性畴的图案。 在一个实施例中,在等离子体离子注入过程期间控制衬底温度的方法包括(a)在处理室中在其上形成有敏感层的衬底上执行等离子体离子注入工艺的第一部分第一时间段 ,其中所述衬底的温度保持在约150摄氏度以下,(b)在所述等离子体离子注入工艺的所述第一部分完成之后冷却所述衬底的温度,以及(c)执行所述等离子体离子的第二部分 在衬底上的注入工艺,其中衬底的温度保持在150摄氏度以下。

    MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION
    29.
    发明申请
    MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION 审中-公开
    使用等离子体植入的磁畴图案

    公开(公告)号:US20090199768A1

    公开(公告)日:2009-08-13

    申请号:US12029601

    申请日:2008-02-12

    CPC classification number: G11B5/855 H01F41/34

    Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.

    Abstract translation: 一种用于在基板上的磁性薄膜中定义磁畴的方法,包括:用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂,其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体,其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域,使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括:保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置,其被配置为(1)装配在所述室内,(2)保持多个盘,将多个盘间隔开,其中,多个盘中的每一个的两侧暴露,以及(3) 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器,由此等离子体可以在腔室中点燃,并且盘在两侧均匀地暴露于等离子体离子。

    PHOTORESIST STRIP WITH OZONATED ACETIC ACID SOLUTION
    30.
    发明申请
    PHOTORESIST STRIP WITH OZONATED ACETIC ACID SOLUTION 审中-公开
    带有臭氧酸溶液的胶片条

    公开(公告)号:US20090117500A1

    公开(公告)日:2009-05-07

    申请号:US11933661

    申请日:2007-11-01

    CPC classification number: G03F7/423 G03F7/426

    Abstract: A solution, apparatus, and method for stripping photoresist from a workpiece are disclosed. Embodiments of the invention describe a solution comprising diluted liquid acetic acid and dissolved gaseous ozone. In an embodiment an ozonated liquid acetic acid solution is prepared by dissolving ozone in liquid DI water and then mixing with liquid acetic acid. In another embodiment an ozonated liquid acetic acid solution is prepared by mixing liquid DI water and liquid acetic acid and then dissolving ozone. The ozonated liquid acetic acid solution is used to strip a layer of photoresist from a workpiece with improved performance.

    Abstract translation: 公开了一种用于从工件剥离光致抗蚀剂的溶液,设备和方法。 本发明的实施方案描述了包含稀释的液体乙酸和溶解的气态臭氧的溶液。 在一个实施方案中,通过将臭氧溶解在液体去离子水中,然后与液体乙酸混合来制备臭氧化的液体乙酸溶液。 在另一个实施方案中,通过混合液体去离子水和液体乙酸然后溶解臭氧来制备臭氧化的液体乙酸溶液。 臭氧化的液体乙酸溶液用于以改进的性能从工件剥离一层光致抗蚀剂。

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