公开(公告)号：US08586952B2

公开(公告)日：2013-11-19

申请号：US12916600

申请日：2010-10-31

Applicant: Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev ,  Roman Gouk ,  Steven Verhaverbeke

IPC: G21G5/00

CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/746 ,  H01J37/32412

Abstract: Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.

Abstract translation: 本发明的实施例提供了一种在等离子体离子注入工艺期间减少热能积聚的方法，用于在衬底上的磁敏表面上形成包括磁性和非磁性畴的图案。 在一个实施例中，在等离子体离子注入过程期间控制衬底温度的方法包括（a）在处理室中在其上形成有敏感层的衬底上执行等离子体离子注入工艺的第一部分第一时间段 ，其中所述衬底的温度保持在约150摄氏度以下，（b）在所述等离子体离子注入工艺的所述第一部分完成之后冷却所述衬底的温度，以及（c）执行所述等离子体离子的第二部分 在衬底上的注入工艺，其中衬底的温度保持在150摄氏度以下。

公开(公告)号：US20130095252A1

公开(公告)日：2013-04-18

申请号：US13623819

申请日：2012-09-20

Applicant: KURTIS LESCHKIES ,  Steven Verhaverbeke ,  Robert Visser

Inventor： KURTIS LESCHKIES ,  Steven Verhaverbeke ,  Robert Visser

IPC: B05D1/04 ,  B05B5/025

CPC classification number: B05D1/007 ,  B05B5/04 ,  B22F2009/0888 ,  B22F2009/0892 ,  B22F2202/06 ,  D01D5/0061 ,  D01D5/0092 ,  D01D11/06 ,  D01F1/09 ,  D01F6/50

Abstract: Embodiments of the invention generally include apparatus and methods for depositing nanowires in a predetermined pattern during an electrospinning process. An apparatus includes a nozzle for containing and ejecting a deposition material, and a voltage source coupled to the nozzle to eject the deposition material. One or more electric field shaping devices are positioned to shape the electric field adjacent to a substrate to control the trajectory of the ejected deposition material. The electric field shaping device converges an electric field at a point near the surface of the substrate to accurately deposit the deposition material on the substrate in a predetermined pattern. The methods include applying a voltage to a nozzle to eject an electrically-charged deposition material towards a substrate, and shaping one or more electric fields to control the trajectory of the electrically-charged deposition material. The deposition material is then deposited on the substrate in a predetermined pattern.

公开(公告)号：US20120055535A1

公开(公告)日：2012-03-08

申请号：US13227572

申请日：2011-09-08

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Kurtis Leschkies ,  Robert Visser

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Kurtis Leschkies ,  Robert Visser

IPC: H01L31/042 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/02366 ,  Y02E10/50

Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a textured superstrate, a front contact layer, a photoabsorber layer and a back contact layer. The textured superstrate has a plurality of craters with an average opening angle, an average aspect ratio and an average depth. Methods of making such photovoltaic cells and photovoltaic modules are also described.

Abstract translation: 本发明的实施方案涉及包含纹理的上层，前接触层，光吸收层和背接触层的光伏电池。 织构化的覆层具有平均开放角度，平均纵横比和平均深度的多个凹坑。 还描述了制造这种光伏电池和光伏模块的方法。

公开(公告)号：US20110163065A1

公开(公告)日：2011-07-07

申请号：US12984528

申请日：2011-01-04

Applicant: Steven Verhaverbeke ,  Jose Antonio Marin

Inventor： Steven Verhaverbeke ,  Jose Antonio Marin

IPC: G11B5/84 ,  C23C16/448 ,  H01L21/3065 ,  C23C16/458 ,  B05C13/02 ,  B05D5/12

CPC classification number: G11B5/8404 ,  C23C14/48 ,  C23C14/50 ,  H01L21/67721 ,  H01L21/67736 ,  H01L21/67766 ,  H01L21/67781 ,  H01L21/68771

Abstract: A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier.

Abstract translation: 提供了一种用于同时处理多个基板的方法和装置。 每个基底可以具有待处理的两个主要活性表面。 该装置具有基板处理模块和基板处理模块。 基板处理模块具有加载器组件，导板组件和工厂接口。 衬底在装载机组件上设置在衬底载体上。 在需要双面处理的情况下，导板组件用于翻转衬底载体上的所有衬底。 工厂接口定位用于保持进入和离开基板处理模块的基板的基板载体。 衬底处理模块包括负载锁定，传送室和多个处理室，每个处理室被配置为处理设置在衬底载体上的多个衬底。

公开(公告)号：US20110101247A1

公开(公告)日：2011-05-05

申请号：US12916600

申请日：2010-10-31

Applicant: Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev ,  Roman Gouk ,  Steven Verhaverbeke

IPC: G21G5/00

CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/746 ,  H01J37/32412

Abstract: Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.

Abstract translation: 本发明的实施例提供了一种在等离子体离子注入工艺期间减少热能积聚的方法，用于在衬底上的磁敏表面上形成包括磁性和非磁性畴的图案。 在一个实施例中，在等离子体离子注入过程期间控制衬底温度的方法包括（a）在处理室中在其上形成有敏感层的衬底上执行等离子体离子注入工艺的第一部分第一时间段 ，其中所述衬底的温度保持在约150摄氏度以下，（b）在所述等离子体离子注入工艺的所述第一部分完成之后冷却所述衬底的温度，以及（c）执行所述等离子体离子的第二部分 在衬底上的注入工艺，其中衬底的温度保持在150摄氏度以下。

公开(公告)号：US20100311228A1

公开(公告)日：2010-12-09

申请号：US12748780

申请日：2010-03-29

Applicant: VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/3213 ,  H01L21/20

CPC classification number: C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

公开(公告)号：US07767586B2

公开(公告)日：2010-08-03

申请号：US12037248

申请日：2008-02-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/00014

Abstract: Methods for forming connective elements on integrated circuits for packaging applications are provided herein. In some embodiments, a method of forming connective elements on an integrated circuit for flipchip packaging may include providing a resist layer on the integrated circuit; forming a plurality of holes through the resist layer; filling the plurality of holes with conductive material; and stripping at least a portion of the resist layer using a stripping solution containing acetic anhydride and ozone to expose the connective elements.

Abstract translation: 本文提供了用于在包装应用的集成电路上形成连接元件的方法。 在一些实施例中，在用于倒装芯片封装的集成电路上形成连接元件的方法可以包括在集成电路上提供抗蚀剂层; 通过所述抗蚀剂层形成多个孔; 用导电材料填充多个孔; 以及使用含有乙酸酐和臭氧的剥离溶液剥离至少一部分抗蚀剂层以暴露连接元件。

公开(公告)号：US07718009B2

公开(公告)日：2010-05-18

申请号：US10931093

申请日：2004-08-30

Applicant: Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

Inventor： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian J. Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James S. Papanu ,  Dennis Yost

IPC: C23G1/02

CPC classification number: H01L21/02074 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/76808 ,  H01L21/76814

Abstract: Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

Abstract translation: 描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。 描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。 此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。 此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

公开(公告)号：US20090199768A1

公开(公告)日：2009-08-13

申请号：US12029601

申请日：2008-02-12

Applicant: Steven Verhaverbeke ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Mahalingam Venkatesan

Inventor： Steven Verhaverbeke ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Mahalingam Venkatesan

IPC: B44C1/22 ,  C23C16/00

CPC classification number: G11B5/855 ,  H01F41/34

Abstract: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.

Abstract translation: 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。

公开(公告)号：US20090117500A1

公开(公告)日：2009-05-07

申请号：US11933661

申请日：2007-11-01

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: G03C1/805 ,  A61L2/02 ,  G03C11/12

CPC classification number: G03F7/423 ,  G03F7/426

Abstract: A solution, apparatus, and method for stripping photoresist from a workpiece are disclosed. Embodiments of the invention describe a solution comprising diluted liquid acetic acid and dissolved gaseous ozone. In an embodiment an ozonated liquid acetic acid solution is prepared by dissolving ozone in liquid DI water and then mixing with liquid acetic acid. In another embodiment an ozonated liquid acetic acid solution is prepared by mixing liquid DI water and liquid acetic acid and then dissolving ozone. The ozonated liquid acetic acid solution is used to strip a layer of photoresist from a workpiece with improved performance.

Abstract translation: 公开了一种用于从工件剥离光致抗蚀剂的溶液，设备和方法。 本发明的实施方案描述了包含稀释的液体乙酸和溶解的气态臭氧的溶液。 在一个实施方案中，通过将臭氧溶解在液体去离子水中，然后与液体乙酸混合来制备臭氧化的液体乙酸溶液。 在另一个实施方案中，通过混合液体去离子水和液体乙酸然后溶解臭氧来制备臭氧化的液体乙酸溶液。 臭氧化的液体乙酸溶液用于以改进的性能从工件剥离一层光致抗蚀剂。