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公开(公告)号：US20180351079A1
公开(公告)日：2018-12-06
申请号：US15943048
申请日：2018-04-02
Applicant: TDK CORPORATION
Inventor： Eiji SUZUKI , Katsuyuki NAKADA , Shogo YONEMURA
Abstract: A laminated structure includes a ferromagnetic layer, a multiferroic layer provided on one surface of the ferromagnetic layer, and a ferroelectric layer which is provided on the multiferroic layer opposite to the ferromagnetic layer and has a permittivity greater than that of the multiferroic layer.
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22.发明申请公开(公告)号：US20180342668A1
公开(公告)日：2018-11-29
申请号：US15988707
申请日：2018-05-24
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
CPC classification number: G11B5/3906 , G01R33/093 , G11B5/3133 , H01L43/08 , H01L43/10 , H01L43/12 , H03B15/006 , H03H2/00
Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0
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公开(公告)号：US20180068680A1
公开(公告)日：2018-03-08
申请号：US15554066
申请日：2016-03-29
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Tatsuo SHIBATA
IPC: G11B5/39 , G11C11/16 , H01F10/193 , H01L27/22 , H01L29/82
CPC classification number: G11B5/3909 , G11B2005/3996 , G11C11/161 , H01F1/405 , H01F10/1936 , H01L27/105 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0
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24.发明申请MAGNETIC ELEMENT, AND MAGNETIC HIGH FREQUENCY ELEMENT HAVING THE MAGNETIC ELEMENT 审中-公开磁性元件和具有磁性元件的磁性高频元件公开(公告)号：US20150249205A1
公开(公告)日：2015-09-03
申请号：US14630121
申请日：2015-02-24
Applicant: TDK CORPORATION
Inventor： Takahiro SUWA , Katsuyuki NAKADA , Takumi AOKI , Tomoyuki SASAKI , Tetsuya SHIBATA
CPC classification number: H01L43/08 , H03B15/006
Abstract: A higher oscillation output is realized in a magnetic element utilizing high frequency characteristics of a magnetoresistive effect element. A magnetic element 1 includes a magnetoresistive effect film 10 including a magnetic pinned layer 14 and a magnetic free layer 12 with a non-magnetic spacer layer 13 interposed therebetween, and a pair of electrodes (lower electrode layer 11 and upper electrode layer 15) arranged with the magnetoresistive effect film 10 interposed therebetween in a stacking direction of the magnetoresistive effect film 10, wherein, given that a minimum value of an area of the magnetic free layer 12 in a section perpendicular to the stacking direction is denoted by Sf, and that a minimum value of an area of the magnetic pinned layer 14 in a section perpendicular to the stacking direction is denoted by Spm, relation of Sf>Spm is satisfied.
Abstract translation: 在利用磁阻效应元件的高频特性的磁性元件中实现更高的振荡输出。 磁性元件1包括磁阻效应膜10，其包括磁性被钉扎层14和介于其间的非磁性间隔层13的磁性自由层12以及一对电极（下电极层11和上电极层15） 其中磁阻效应膜10在磁阻效应膜10的层叠方向插入其间，其中，假定在与层叠方向垂直的截面中的无磁性层12的面积的最小值由Sf表示，并且 磁性被钉扎层14的垂直于层叠方向的部分的面积的最小值由Spm表示，满足Sf> Spm的关系。
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公开(公告)号：US20240347252A1
公开(公告)日：2024-10-17
申请号：US18034466
申请日：2022-06-09
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA
CPC classification number: H01F10/3254 , H01F17/00
Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.
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Patent Agency Ranking
公开(公告)号：US20240062777A1
公开(公告)日：2024-02-22
申请号：US18240657
申请日：2023-08-31
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA , Tetsuya UEMURA
CPC classification number: G11B5/3903 , G01R33/093 , G11B5/3929 , G11C11/161 , H01F10/1936 , H01F10/325 , H10B61/00 , H10N50/85 , G11B2005/3996
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α-
公开(公告)号：US20230309415A1
公开(公告)日：2023-09-28
申请号：US17702092
申请日：2022-03-23
Applicant: TDK Corporation
Inventor： Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magneto resistive element includes a laminate including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer and an insulating layer configured to cover at least a part of a side surface of the laminate and including an insulator. The first ferromagnetic layer has a first non-nitride region and a first nitride region that is closer to the insulating layer than the first non-nitride region and contains nitrogen.
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28.发明申请公开(公告)号：US20230009284A1
公开(公告)日：2023-01-12
申请号：US17370613
申请日：2021-07-08
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Hiroaki SUKEGAWA , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.
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公开(公告)号：US20220278272A1
公开(公告)日：2022-09-01
申请号：US17746178
申请日：2022-05-17
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
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公开(公告)号：US20210286028A1
公开(公告)日：2021-09-16
申请号：US17164958
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.
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