中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

29 records (took 0.021 seconds)

    Method and apparatus for ultraviolet (UV) patterning with reduced outgassing
    21.
    发明授权
    Method and apparatus for ultraviolet (UV) patterning with reduced outgassing 有权
    减少放气的紫外（UV）图案化方法和设备

    公开(公告)号：US08988652B2

    公开(公告)日：2015-03-24

    申请号：US13654750

    申请日：2012-10-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chia-Hao Hsu ,  Chia-Chen Chen ,  Ying-Yu Chen ,  Tzu-Li Lee ,  Shang-Chieh Chien ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F7/20

    CPC classification number: G03F7/2002 ,  G03F7/20 ,  G03F7/70916 ,  G03F7/70933

    Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

    Abstract translation: 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features
    23.
    发明申请
    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features 审中-公开

    公开(公告)号：US20190121228A1

    公开(公告)日：2019-04-25

    申请号：US16220324

    申请日：2018-12-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/26 ,  G03F7/20

    Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

    Method of patterning a material layer
    25.
    发明授权
    Method of patterning a material layer 有权
    图案化材料层的方法

    公开(公告)号：US09570302B1

    公开(公告)日：2017-02-14

    申请号：US15040533

    申请日：2016-02-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

    IPC: H01L21/027 ,  H01L21/02

    CPC classification number: H01L21/02172 ,  H01L21/02118 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32

    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

    Abstract translation: 公开了制造半导体器件的方法。 该方法包括在衬底上形成辐射可去除材料（RRM）层，并通过将RRM层的第一部分暴露于辐射束来移除衬底的第一区域中的RRM层的第一部分。 在去除第一区域中的RRM层的第一部分之后，在衬底的第二区域中的RRM层的第二部分保留。 该方法还包括在衬底的第二区域中的RRM层的第二部分上形成选择性形成层（SFL），并在衬底的第一区域上形成材料层。

    Rotary EUV collector
    28.
    发明授权
    Rotary EUV collector 有权
    旋转EUV收集器

    公开(公告)号：US09429858B2

    公开(公告)日：2016-08-30

    申请号：US14035268

    申请日：2013-09-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

    IPC: G03F7/20

    CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

    Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

    Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

    Method of making an extreme ultraviolet pellicle
    29.
    发明授权
    Method of making an extreme ultraviolet pellicle 有权
    制造极紫外线防护薄膜的方法

    公开(公告)号：US09256123B2

    公开(公告)日：2016-02-09

    申请号：US14259194

    申请日：2014-04-23

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/64 ,  G03F7/20 ,  B29C71/02

    CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

    Abstract: The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.

    Abstract translation: 本发明涉及一种形成具有连接到没有支撑网的防护薄膜框架的防护薄膜组件的EUV防护薄膜组件的方法，以及相关联的装置。 在一些实施例中，该方法通过在平行于衬底顶表面的位置处在衬底内形成切割平面来进行。 防护薄膜组件框架附接到基板的顶表面。 基底沿着切割平面切割以形成防护薄膜，该薄膜包含连接到防护薄膜框架上的薄化基底。 在切割基板之前，操作基板以在形成切割平面期间和/或在分离基板期间减少对基板顶表面的结构损伤。 降低对基板顶表面的结构损伤提高了薄板基板的耐久性，并且消除了对防护薄膜的支撑结构的需要。

Patent Agency Ranking